對於以PLD 在不同縱向磁場下成長之 AZO 透明導電膜結構 的分析我們得到以下的結論：
(1) 由 GIXRD 及 Zn K-edge XANES 量測結果可知，在 C006 磁 場條件下成長的 AZO 薄膜有最佳的 ZnO（0 0 2）排序性以 及方向性。
(2) 由 O 及 Al K-edge XANES 能譜分析發現，電阻與 O 2p 懸 鍵的多寡及在 c 軸上 Al 與 O 共價特性的增加有關。
(3) 由 O Kα NXES 及 O K-edge XANES 的結果得知，AZO 薄膜 的能帶寬度保持不變。
(4) 於本研究中，AZO 薄膜電性的表現會受到樣品 c 軸上的排 序成長性、O 2p 懸鍵的多寡和 Al2O3共價特性的影響而改
變。
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