效，此結果則符合現今IC 後段製程的需求(~420℃)。
3. TaNx 薄膜無論是經由 RTA (15 % H2)熱處理或氫電漿處理等表面處 理，都能在適當條件下成功減少薄膜表面的 Ta-N 鍵結，並還原成部 份純金屬鉭，由於銅與金屬鉭的附著能較銅與 TaNx來的大，故能有 效改善 Cu/TaNx/SiO2/Si 疊層結構在後段退火溫度中的失潤現象。因 此，隨著元件尺寸的縮小，使用薄膜表面處理來改善阻障層與銅膜間 的附著性，能達到與使用Ta/TaNx雙層阻障層結構的效果，卻又能達 到有效降低使用PE-ALD 製程沉積金屬鉭附著層的時間與成本。
5.2 未來工作
1. 本實驗是利用快速升溫退火爐在氫氣的氛圍下，以期還原 TaNx擴散
阻障層表面的 Ta-N 鍵結增進銅膜與阻障層間的附著強度。實驗設計 是在固定氫氣濃度(15%)下改變熱處理溫度進行表面改質，且結果顯 示在700℃的高溫處理下阻障層薄膜才有部分還原現象出現，但由於 此溫度超過一般 IC 後段製程的操作溫度範圍。故我們後續將嘗試改 變熱處理時的氫氣濃度及時間，希望降低熱處理溫度後仍能有效改善 銅膜與TaNx阻障層的附著強度，以相容於現今半導體後段製程。
2. 由於實驗中皆未以溝渠(trench)及引洞(via hole)等高深寬比的結構做 為薄膜沉積及改質的探討對象，故未來將嘗試將現有的研究成果與這 些高深寬比的結構整合在一起，以探討評估其可行性。
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