• 沒有找到結果。

奈米材料不論在光學、生物科技、微電子元件或半導體等科技上均 有良好的發展潛能,奈米材料可使材料密度或元件使用密度大大地提 高。本論文利用簡便之電化學製程,製作氧化鋁與氧化鈦奈米管,並將 其配合在合金奈米線、表面自我清潔與染料吸附之模板應用上。鋁與鈦 表面經陽極處理於特定實驗參數控制下,可得ㄧ規則排列之氧化鋁 和氧化鈦奈米管結構,此結構適用於模板材。利用氧化鋁模板製得 的金-矽共晶合金具有單晶結構,單晶金-矽共晶奈米線中其組成乃由奈 米級(20nm)的金與矽顆粒所組成。

鈦金屬表面會自然形成一奈米(nm)級之氧化層,至於則厚度為毫米 (µm)級之氧化層,可利用陽極處理法或熱處理法產生。陽極處理使鈦基 材表面產生一規則性之TiO2奈米管,於陽極處理條件中,較高的電解液 溫度、氟離子濃度、pH 值、與較長的陽極處理時間,可成長較厚的 ATO 層,而較高的外加電壓值可得較大的 ATO 管徑。熱處理使鈦基材表面產 生一緻密性之TiOx氧化層,TiO2奈米管經450oC 熱處理後,可由非結晶 相之 TiO2相變化為銳鈦相之 TiO2,熱處理後將使 Ti-ATO 介面生成一 TiOx氧化層,此氧化層結構經熱力學反應式之氧分壓值評估後,其在鈦 基材上之結構順序則依序為 TiO2、TiO、Ti2O3、Ti3O5、與 Ti4O7等氧化

利用水珠於 TiO2表面之接觸角特性,可評估 TiO2表面之自我清潔 效應。經熱處理所產生之TiO2薄膜,其顯微結構為緻密性之薄膜。該薄 膜經功率為2 mW/cm2之紫外光照射20 min 後,其固-液介面之接觸角由 51.5o降至0o;然而,鈦經陽極處理後所產生的薄膜,其顯微結構為具規 則排列性之奈米管結構,因該薄膜具極大之表面積與毛細管特性,因此 不需經紫外光照射,其固-液介面之接觸角即可達 0o。經熱處理於鈦板 上所生成的緻密性二氧化鈦,對於敏化染料的吸附能力有限,經已具 奈米管結構之二氧化鈦薄膜測試比對後,因奈米管結構的大表面積使 得染料的吸附性大增,染料的吸附性也正比於奈米管之管長。

第六章 參考文獻

1. K. Matsumoto, S. Takahashi, M. Ishii, M. Hoshi, A. Kurokawa, S.Ichimura, A. Ando, Jpn. J. Appl. Phys., Part 1 34 (1995) 1387.

2. K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian, and J.

S.Harris, Appl. Phys. Lett. 68 (1996) 34.

3. K. Matsumoto, Proc. IEEE 85 (1997) 612.

4. S.Y. Chou, P. R. Krauss, L. Long, J. Appl. Phys. 79 (1996) 6101.

5. S.Y. Chou, P. R. Krauss, M. S. Wei, and P. B. Fischer, Scr. Metall. Mater.

33 (1995) 1537.

6. R. Notzel, Semicond. Sci.Technol. 11 (1996) 1365.

7. D. Levy and L. Esquivias, Adv. Mater. 7 (1995) 120.

8. B. B. Lakshmi, C. J. Patrissi, C. R. Martin, Chem. Mater. 9 (1997) 2544.

9. P. P. Nguyen, D. H. Pearson, and R. J. Tonucci, J.Electrochem. Soc. 145 (1998) 247.

10. V. M. Cepak, J. C. Hulteen, G. Che, et al., Chem. Matter. 9 (1997) 1065.

11. Flytzanis C.,Hache F., Klein, M. C., Ricard, D. Roussingnol, Amsterdam, 29 (1991) 323.

12. Kosuka, H.; Sakka, S. Chem Mater. 5 (1993) 222.

13. Handley, D. A. In Colloidal Gold: Principles, Methods andApplications;

Hayat, M. A., Ed.; Academic Press: San Diego, CA, 1 (1989) 13.

14. Mulvaney, P.; Linnert, T.; Henglein, A. J. Phys. Chem. (1991) 95.

15. Brust, M.: Walker, M.; Bethell, D.; Schiffrin, D.; Whyman, R. J.Chem.

Soc., Chem. Commun. (1994) 801.

16. Leff, D. V.; Ohara, D. C.; Heath, J. R.; Ferrell, T. C. J. Opt. Soc.Am. B 4

17. U. Kreibig, J. Phys. 38 (1977) C2–97.

18. Y. Borensztein, P. De Andres, R. Monreal, J. Lopez-Rios, F.Flores, Phys.

Rev. (B) 33 (1986) 2828.

19. K.P. Charle, W. Schulze, B. Winter, Z. Phys. D 12 (1989)471.

20. J. Lerme, B. Palpant, B. Prevel, E. Cottancin, M. Pellarin,M. Treilleux, J.L. Vialle, A. Perez, M. Broyer, Eur. Phys. J.D 4 (1998) 95.

21. H. HOovel, S. Fritz, A. Hilger, U. Kreibig, M. Vollmer, Phys.Rev. (B) 48 (1993) 178.

22. A. Mills, S. LeHunte, J. Photochem. Photobiol. A 108 (1997) 1–35.

23. L.M. Dorfman, G.E. Adams, NSRDS-NBS 46 (1973) 1–72.

24. T. Matsunaga, R. Tomoda, T. Nakajima, H. Wake, FEMS Microbiol.Lett.

29 (1985) 211.

25. T. Saito, T. Iwase, J. Horie, T. Morioka, J. Photochem. Photobiol. B14 (1992) 369.

26. P.C. Maness, S. Smolinski, D.M. Blake, Z. Huang, E.J. Wolfrum,W.A.

Jacoby, Appl. Environ. Microbiol. 65 (1999) 4094.

27. H. Zheng, P.C. Maness, D.M. Blake, E.J. Wolfrum, S.L. Smolinski,W.A.

Jacoby, J. Photochem. Photobiol. A 130 (2000) 163.

28. K. Sunada, Y. Kikuchi, K. Hashimoto, A. Fujishima, Environ.

Sci.Technol. 32 (1998) 726.

28. V. Rodrigues, T. Fuhrer, and D. Ugarte, Phys. Rev. Lett.85 (2000)n4124.

29. V. Rodrigues and D. Ugarte, Phys. Rev. B 63 (2001) 073405

30. O. Gulseren, F. Ercolessi, and E. Tosatti, Phys. Rev. Lett.80 (1998) 3775.

31. U. Landman, W. Luedtke, N. Burnham, and R. J. Colton,Science 248 (1990) 454.

32. M. Brandbyge et al., Phys. Rev. B 52 (1995) 8499.

33. G. E. Thompson and G. C. Wood: Trans. Inst. Metal Finishing 58 (1980) 21.

34. G. E. Thompson and G. C. Wood: Nature 290 (1981) 230.

35. H. Masuda and H. Yamada: Appl. Phys. Lett. 71 (1997) 2770.

36. K. T. Sunil and C. C.Hsueh: Chaos 12 (2002) 240.

37. H. Masuda and F. Hasegwa: J. Electrochem. Soc. 144 (1997) 127.

38. H. Masuda and K. Fukuda: Science 268 (1995) 1466.

39. M. Hill: Nature 272 (1978) 433.

40. H. Akahori: J. Electron Microscopy Japan 11 (1962) 217.

41. R. Charles and S. Spooner: J. Electrochem. Soc. 102 (1955) 156.

42. F. Burmeister and C. Schafle: Adv., Mater., 10 (1998) 495.

43. H. Masuda and M. Yotsuya: Appl. Phys. Lett. 78 (2001) 826.

44. E. Miller: United States Patent, Patent No. : 5747180 (1998).

45. H. Asoh and K. Nishio: J. Vac.Sci. Technol. B 19 (2) (2001) 569.

46. Y. Li and E. R. Holland: J. Vac. Sci. Technol. B 18 (2) (2000) 994.

47. M. Adachi, Y. Murata, M. Harada, Y. Yoshikawa, Chem. Lett. 29 (2000) 942.

48. S.Z. Chu, S. Inoue, K. Wada, D. Li, H. Haneda, S. Awatsu, J. Phys.

Chem. B 107 (2003) 6586.

49. O.K. Varghese, D. Gong, M. Paulose, K.G. Ong, E.C. Dickey, C.A.

Grimes, Adv. Mater. 15 (2003) 624.

50. G.K. Mor, M.A. Carvalho, O.K. Varghese, M.V. Pishko, C.A. Grimes, J.

Mater. Res. 19 (2004) 628.

51. O.K. Varghese, G.K. Mor, C.A. Grimes, M. Paulose, N. Mukherjee, J.

52. M. Paulose, O.K. Varghese, G.K. Mor, C.A. Grimes, K.G. Ong, Nanotechnology 17 (2006) 398.

53. G.K. Mor, K. Shankar, O.K. Varghese, C.A. Grimes, J. Mater. Res. 19 (2004) 2989.

54. G.K. Mor, K. Shankar, M. Paulose, O.K. Varghese, C.A. Grimes, Nano Lett. 5 (2005) 191.

55. O.K. Varghese., M. Paulose, K. Shankar, G.K. Mor, C.A. Grimes, J.

Nanosci. Nanotechnol. 5 (2005) 1158.

56. S. Uchida, R. Chiba, M. Tomiha, N. Masaki, M. Shirai, Electrochemistry 70 (2002) 418.

57. M. Adachi, Y. Murata, I. Okada, Y. Yoshikawa, J. Electrochem. Soc.

150 (2003) G488.

58. G.K. Mor, K. Shankar, M. Paulose, O.K. Varghese, C.A. Grimes, Nano Lett. 6 (2006) 215.

59. M. Paulose, K. Shankar, O.K. Varghese, G.K. Mor, B. Hardin, C.A.

Grimes, Nanotechnology 17 (2006) 1.

60. R.L.Kurtz, R.Stockbauer, T.E.Maday, E.Roman and J.L.de Segovia, Surf.Sci.218 (1989) 178.

61. S.Iijima, Nature 354 (1991) 56.

62. B.C.Satishkumar, A.Govindaraj, E.M.Vogl﹐ Basumallick, C.N.Rao, J.Mater.Res. 12 (1997) 604.

63. H.Nakamura and Y.Matsui, J.Am.Chem.Soc. 117 (1995) 2651.

64. B.B.Lakshmi, C.J.Patrissi and C.R.Martin, Chem.Matr. 9 (1997) 2544.

65. S.Kobayahi, K.Hamabusa, N.Hamasaki, M.Kimura and H.Shirai, Chem.Mater. 12 (2000) 1523.

66. T.Kasuga, M.Hiramatsu, A.Hoson, T.Sekino and K.Niihara, Langmuir 14 (1998) 3160.

67. G.Dagan and M.Tomkiewicz, J.Phys.Chem.97 (1993) 12651.

68. K.Vinodgopal, S.Hotchandani and P.V.Kamat, Phys.Chem.97 (1993) 9040.

69. A.L.Linsebigler, G.Lu and J.Yates, Chem.Rev.95 (1995) 735.

70. W. Barthlott, C.Neihuis, Planta 202 (1997) 1.

71. A. Fujishima, K. Hashimoto, T. Watanabe, BKC Tokyo; 1999.

72. A. Fujishima, K. Honda, Nature 238 (1972) 37.

73. D. Bahnemann, Nachr. Chem. Tech. Lab.42 (1994) 378.

74. Dirk Bockelmann,Cuvillier Verlag; Göttingen 1994.

75. Kim Kevin, Rueckes, United States Patent, Patent No.: WO0103208 (2001).

76. Yang Yang, Huilan Chen, Solid State Communications, 123 (2002) 279.

77. K. Nielsch, R. B. Wehrspohn, Applied Physicals Letters, 79, No. 9 (2001) 1360.

78. R. Sordan, M. Burghard, Applied Physicals Letters, 79, No. 13 (2001) 2073.

79. M. Zheng, L. Menon, Physical Review B, 62, No. 18, (2000) 12282.

80. Y. C. Kong, D. P. Yu, Applied Physics Letters, 78 (2001) 407.

81 Q. Cai, M. Paulose, O.K. Varghese, C.A. Grimes, J. Mater. Res., 20 (2005) 230.

82 M. Paulose, K. Shankar, S. Yoriya, H.E. Prakasam, O.K. Varghese, G.K.

Mor, T.A. Latempa, J. Phys. Chem.B, 110 (2006) 16179.

83 G.K. Mor, O.K. Varghese, M. Paulose, K. Shankar, C.A. Grimes, Solar Energy Materials & Solar Cells 90 (2006) 2011.

84. S. Sharma, T.I.Kamins, M.S.Islam, R. Stanley William, A. F. Marshall, J.

Cryst. Growth. 280 (2005) 562.

85. Q. Wan, T.H. Wang, C.L. Lin, Appl. Surf. Sci. 221 (2004) 38.

86. V.V. Zhirnov, L. Bormatova, E.I. Givargizov, Appl. Surf. Sci. 94/95 (1996) 144.

87. M. Komatsu, M. Kiritani, Mat. Sci. Eng., A350 (2003)150.

88. Geraldine Smith, Phase Diagram for Ceramics, vol. Ⅳ, J. Am. Ceram.

Soc., 1981.

89. Syverud, "JANAF Thermochemical Table, 3rd., ed., J. Phys. Chem. Ref.

Data, 1985.

90. Principles of Colloid and surface Chemistry,ed. P. C. Hiemenz, Dekker, New York, (1986)37.

第七章 著作

相關文件