結論 - 熱退火於InAsSb/GaAs量子點光性及應力鬆弛引致缺陷之載子傳輸特性研究

在 InAs 量子點中摻雜 Sb，可幫助量子結構長的更厚，發光波長更長。

本論文採用此結構，成長了三片不同厚度( 2ML、2.2ML、2.8ML )的 InAsSb/GaAs 量子點，在 PL、CV 及 DLTS 量測後，發現 2.2ML 樣品的載子侷限效應最好，且沒有缺陷存在，而2.8ML 的樣品已發生晶格鬆弛，這表示其臨界厚度介於2.2~2.8ML。

由光性及電性分析，得知 InAsSb 量子點與一般 InAs 量子點的差別為：

1. 量子點的尺寸不均勻現象：顯現於低溫 PL 量測上，基態與激發態的能階差高達160meV，激發態半高寬高達 130meV，異於一般 InAs 量子點。

2. 提前發生晶格鬆弛現象：由光性得知臨界厚度介於 2.2~2.8ML，較 InAs 量子點2.7~3.06ML 小。因此 Sb 雖可降低能隙進而拉長波長，但是由於所受到的應力較大，會提早發生晶格鬆弛現象。

因此，我們針對InAsSb(2.2ML)樣品進行 650~750

^O

C熱退火處理，以找出其中的Sb effect。由光性分析得知，原本激發態半高寬(130meV)的訊號，

於熱退火650

^O

C時可區分為兩個清晰的訊號，更於 700

^O

C時擁有 60~70meV 的能階差，半高寬由130meV降低至 60meV。我們推測Sb的加入，會使量子點成長時產生尺寸不均勻現象，而外加熱能可促使樣品均勻性獲得改善。接著我們做以下兩種驗證：

1. AFM 表面分析：InAsSb 的樣品從 AFM 表面分析可發現確實有大、小兩種尺寸的量子點存在。

2. 針對長晶厚度最薄的 InAsSb(2.0ML)樣品，進行熱退火處理以作對照，

原因是該樣品可以代表InAsSb 初使成長的情形。在光性上發現熱退火對該樣品沒有明顯地改變。原因是該樣品沒有尺寸不均勻的現象，且量子點密度較低，故外加熱能對其沒有影響。

然而，熱退火 700

⁰

C的樣品於室溫下PL特性變差，並有類似晶格鬆弛的現象。於是將該樣品作電性分析，在CV量測發現大量載子被空乏，並由 DLTS量測觀察到兩個缺陷存在，其類型分別為threading dislocation 及 misfit dislocation，而活化能分別為 0.60eV及 0.33eV。相較於已晶格鬆弛的 InAsSb量子點，其活化能分別為 0.64eV及 0.35eV，兩者是相類似的。由實驗結果推測熱退火可提供應力鬆弛現象發生所需的能量，並產生類似於長晶超過臨界厚度而晶格鬆弛樣品的缺陷。

接著探討 Relaxed InAsSb(2.8ML)樣品。從 CV 量測發現大量載子被空乏的現象，接著我們利用 DLTS 量測計算出該樣品有捕捉位能障

=0.21eV。並由 Fermi-Dirac Probability Function 計算出載子佔據量子能階的機率約小於5%。由此得知約有九成以上的載子被空乏，這和 C-V 量測所得的情形是一致的。

E σ

由 DLTS 分析得知 Relaxed InAsSb(2.8ML)樣品有兩個缺陷存在。分別為misfit dislocation(活化能 0.35eV);threading dislocation(活化能 0.64eV)。

再由HRTEM 可得知 misfit 缺陷的分布是位於 quantum dot 的 interface，並未向top GaAs 及 bottom GaAs 延伸。

接下來探討熱退火對於 relaxed InAsSb QD 的缺陷的影響。由 PL 量測發現熱退火後發光波長藍移且均勻性變差。在電性上，由CV 量測發現載子濃度銳減。針對量子點附近的偏壓進行DLTS 量測，發現缺陷的活化能由0.35eV 變小至 0.2eV。為了釐清活化能變小的原因，是缺陷能階向 GaAs 傳導帶上移，還是載子趨向跳至量子點的量子能階？我們進行較大偏壓下的DLTS 量測，發現缺陷能階位置不變。推測部分載子並非由缺陷跳至 GaAs 傳導帶的行為，而是趨向跳至量子點的量子能階。此外，DLTS 所量得的缺陷，於低溫下呈現持續與溫度無關的訊號，意指在低溫下有穿隧現象。綜而言之，有部分載子傾向由misfit dislocation 缺陷跳至量子點的量子能階後再穿隧出去的傳輸機制。

F-vdM V-W S-K

圖 1-1 三種不同長晶模式的示意圖

900 1000 1100 1200 1300 1400 1500 1600 0.00

0.05 0.10 0.15 0.20 0.25 0.30

PL In ten s ity (a .u .)

Wavelength (nm)

T:300K,P:100mW sh454(2ML) sh435(2.2ML) sh438(2.8ML)

1235 1255

1285

圖 1-2 三片樣品之室溫 PL 圖

圖1-3 InAsSb ternary alloys X-ray分成InAs-rich與InSb-rich兩群 Ref. Journal of Crystal Growth vol.237–239, p1519–1524, 2002

0.3µm n-GaAs Si:6*10 ¹⁶ cm ^-3

n ⁺ -GaAs substrate

In Si Wafer InAsSb　QDs

( 2ML、2.2ML、2.8ML )

圖 2-1 樣品結構圖

樣品編號 InAsSb

SH454 2ML SH435 2.2ML

SH438 2.8ML

圖2-2 樣品能帶圖

InAsSb QDs

2.0ML , 2.2ML

GaAs GaAs

InAsSb QDs

GaAs GaAs

Quantum level：

excite state ground state

Defect level：

2.8ML

GPIB Interface

圖2-3 PL 量測系統架設圖

Laser 532nm

1.3W VNDF

Chopper

Focus lens

PC

Long-pass filter Ref. Signal

Lock-in Amplifier Monochromator

Multi-meter

1000 1100 1200 1300 1400 1500 0.0

2.0x10 ^-3 4.0x10 ^-3 6.0x10 ^-3 8.0x10 ^-3

300K 50K dots-in-well 2.7M L 10m W

int e nsit y(a.u.)

wavelength(nm)

圖3-1(a) 一般dots-in-well量子點-變溫PL圖

1000 1100 1200 1300 1400 1500 0.0

1.0x10 ^-2 2.0x10 ^-2 3.0x10 ^-2 4.0x10 ^-2

1mW 100mW dots-in-well 2.7ML 300K

In te nsi ty(a .u .)

Wavelength(nm)

圖3-1(b) 一般dots-in-well量子點-室溫300K變功率PL圖

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH435(2.2ML)

Intensity( A. U.)

Wavelength ( nm )

25K

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH435(2.2ML)

In tens it y (A. U.)

Wavelength ( nm )

1040mW

900 1000 1100 1200 1300 1400

-0.005

Wavelength ( nm )

25K,low power

圖3-2 (c) InAsSb(2.2ML) –低溫20K變功率PL圖

900 1000 1100 1200 1300 1400 0.000

0.005 0.010 0.015 0.020 0.025

30K 50K 70K 90K 120K 150K 180K 210K 240K 270K 300K

RT-37 0.13mw

PL In te n s it y (a .u .)

Wavelength (nm)

1205

1288

圖3-3 InAsSb(Dots-in-well) -變溫PL圖

800 900 1000 1100 1200 1300 1400 -0.005

0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045

As grown RTA650 ^O C RTA700 ^O C RTA750 ^O C

20K , 5.2mW InAsSb QDs / SH435(2.2ML)

Int ensit y(A.U. )

Wavelength

(

nm

)

圖3-4 InAsSb(2.2ML)-四片熱退火樣品–低溫PL圖

900 1000 1100 1200 1300 1400

InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

Intensity(A.U.)

Wavelength ( nm )

20K

圖3-5(a) InAsSb(2.2ML)-Annealing650

^O

C -變溫PL圖

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

In te nsit y(A.U.)

Wavelength ( nm )

82mW 52mW 13mW

300K,High power

圖3-5(b) InAsSb(2.2ML) -Annealing650

^O

C -室溫300K變高功率PL圖

900 1000 1100 1200 1300 1400 -0.005

InAsSb Q Ds / SH435(2.2M L) / Annealing650 ⁰ C

Intensity(A.U.)

800 900 1000 1100 1200 1300 1400 1500 1600

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

Intensity(A.U.)

Wavelength ( nm )

20k

圖3-6(a) InAsSb(2.2ML)-Annealing700

^O

C -變溫PL圖

800 900 1000 1100 1200 1300 1400 1500 1600 -0.005

0.060 InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

In tensity(A. U .)

Wavelength ( nm )

1040mW

800 900 1000 1100 1200 1300 1400 1500 1600 -0.005

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

In te n s it y( A. U.)

Wavelength ( nm )

6.5mW

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH435(2.2ML) / Annealing750 ⁰ C

Intensity(A.U.)

Wavelength ( nm )

20K

圖3-7(a) InAsSb(2.2ML)-Annealing750

^O

C -變溫PL圖

900 1000 1100 1200 1300 1400 -0.005

0.055 300K,high power

ND_1

InAsSb QDs / SH435(2.2ML) / Annealing750 ⁰ C

Intensity(A.U.)

Wavelength ( nm )

820mW

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH435(2.2ML) / Annealing750 ⁰ C

Int e nsit y(A. U.)

Wavelength ( nm )

0.260mW 0.206mW 0.164mW

20K,low power

圖3-7(c) InAsSb(2.2ML) –Annealing750

^O

C –低溫20K變功率PL圖

900 1000 1100 1200 1300 1400 -0.005 InAsSb QDs / SH435(2.2ML)

In te n s it y( A.U .)

Wavelength ( nm )

25K

900 1000 1100 1200 1300 1400 0.00

0.18 InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

Intensity(A.U .)

Wavelength ( nm )

20K

900 1000 1100 1200 1300 1400 0.00

InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

Intensi ty(A.U.)

Wavelength ( nm )

20K

900 1000 1100 1200 1300 1400 0.00

InAsSb QDs / SH435(2.2ML) / Annealing750 ⁰ C

Intensity(A.U .)

Wavelength ( nm )

20K

變溫PL圖

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 7.8203E-8 R^2= 0.99571

y0 0 ±0

xc1 1.0248±0.00046

w1 0.03024 ±0.00127

A1 0.0002±0.00001

xc2 1.09509 ±0.00077

w2 0.11392 ±0.00127

A2 0.00158 ±0.00002

InAsSb QDs / SH435(2.2ML)

In te nsity(A.U.)

y No weighting Chi^2/DoF = 0.00002 R^2= 0.93987

y0 0 ±0

xc11.06903 ±0.00412 w10.03895 ±0.01358 A10.00072 ±0.00021 xc21.20572 ±0.00189 w20.1297±0.00617 A20.01145 ±0.00041

InAsSb QDs / SH435(2.2ML)

In te nsity(A.U.)

y No weighting Chi^2/DoF = 0.00002 R^2= 0.94112

y0 0 ±0

xc11.07031 ±0.00462 w10.04043 ±0.01523 A10.00069 ±0.00022 xc21.20914 ±0.00187 w20.13021 ±0.00612 A20.01173 ±0.00042

InAsSb QDs / SH435(2.2ML)

In te nsity(A.U.)

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 5.4796E-7 R^2= 0.99729

y0 0 ±0

xc11.05085 ±0.00081 w10.05122 ±0.00157 A10.00086 ±0.00003 xc21.16538 ±0.00039 w20.09993 ±0.00089 A20.00545 ±0.00004

InAsSb QDs / SH435(2.2ML)

In te nsity(A.U.)

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

yNo weighting Chi^2/DoF= 1.9073E-7 R^2= 0.99827

y00 ±0

xc11.0409±0.00053 w10.04351 ±0.00109 A10.00056 ±0.00002 xc21.15111 ±0.00032 w20.10463 ±0.00073 A20.00411 ±0.00002

InAsSb QDs / SH435(2.2ML)

In te nsity(A.U.)

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 2.0763E-7 R^2= 0.99639

y0 0 ±0

xc11.03297 ±0.00061 w10.0395±0.00131 A10.00046 ±0.00002 xc21.12401 ±0.00053 w20.09655 ±0.00117 A20.00269 ±0.00003

InAsSb QDs / SH435(2.2ML)

In tens it y( A .U .)

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.7593E-6 R^2= 0.98907

y0 0 ±0

xc11.06742 ±0.00327 w10.07576 ±0.00541 A10.00098 ±0.00009 xc21.19663 ±0.00116 w20.1093±0.00236 A20.00525 ±0.0001

InAsSb QDs / SH435(2.2ML)

In te nsity(A.U.)

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF= 1.52E-6 R^2= 0.99471

y00 ±0

xc11.0579±0.00143 w10.05823 ±0.00267 A10.00106 ±0.00006 xc21.17983 ±0.00058 w20.10346 ±0.00131 A20.00673 ±0.00007

InAsSb QDs / SH435(2.2ML)

In te nsity(A.U.)

Energy (eV)

100K

圖3-10 InAsSb(2.2ML)-Annealing 650

^O

C ~ Gaussian function 擬合PL圖 Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.2238E-6 R^2= 0.99647

y0 0 ±0

xc11.06758 ±0.00385 w1 0.0538±0.00529

A1 0.00065 ±0.00013

xc21.16383 ±0.00434

w2 0.08575 ±0.00926

A2 0.00374 ±0.00057

xc31.25574 ±0.00367

w3 0.08422 ±0.00346

A3 0.00507 ±0.00048

InAsSb QDs / SH435(2.2ML) / Annealing650

⁰

C

Inten s it y( A .U .)

Wavelength ( nm ) 20k

0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 0.000

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 4.2282E-8 R^2= 0.99933

y0 0 ±0

xc1 1.03896 ±0.00077

w1 0.03809 ±0.0017

A1 0.00025 ±0.00002

xc2 1.11464 ±0.00214

w2 0.0308±0.00625

A2 0.00006 ±0.00002

xc3 1.13287 ±0.00077

w3 0.10286 ±0.00085

A3 0.00271 ±0.00004

InAsSb QDs / SH435(2.2ML) / Annealing650

⁰

C

In te nsity (A.U.)

Wavelength ( nm ) 180K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 2.8911E-8 R^2= 0.99659

y0 0 ±0

xc1 1.02297 ±0.00052

w1 0.03211 ±0.00169

A1 0.00016 ±0.00002

xc2 1.07685 ±0.0028

w2 0.07883 ±0.01009

A2 0.00035 ±0.00011

xc3 1.10219 ±0.00406

w3 0.13904 ±0.00582

A3 0.00066 ±0.0001

InAsSb QDs / SH435(2.2ML) / Annealing650

⁰

C

Inten s it y( A .U .)

Wavelength ( nm ) 240K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.3669E-8 R^2 = 0.99135

y0 0 ±0

xc1 1.01181 ±0.00055

w1 0.03434 ±0.00178

A1 0.0001±0.00001 xc2 1.07365 ±0.00309

w2 0.09276 ±0.00942

A2 0.00024 ±0.00005

xc3 1.06761 ±0.00782

w3 0.21848 ±0.04119

A3 0.00016 ±0.00004

InAsSb QDs / SH435(2.2ML) / Annealing650

⁰

C

Inten s it y( A .U .)

Wavelength ( nm ) 270K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 4.8015E-7 R^2= 0.99761

y0 0 ±0

xc11.06231 ±0.00249

w1 0.04686 ±0.00467

A1 0.00036 ±0.00007

xc21.17134 ±0.00598

w2 0.10007 ±0.01016

A2 0.00359 ±0.00049

xc31.2534±0.00278

w3 0.07251 ±0.00268

A3 0.00287 ±0.00044

InAsSb QDs / SH435(2.2ML) / Annealing650

⁰

C

In te nsity (A.U.)

Wavelength ( nm ) 60K 0.055

Data: A2_40K

Model: Gauss

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.0842E-6 R^2= 0.9954

y0 0 ±0

xc1 1.06404 ±0.0043

w1 0.05222 ±0.00695

A1 0.00045 ±0.00013

xc2 1.17326 ±0.0074

w2 0.10003 ±0.01424

A2 0.00397 ±0.00073

xc3 1.25982 ±0.00415

w3 0.07489 ±0.00373

A3 0.00323 ±0.00063

InAsSb QDs / SH435(2.2ML) / Annealing650

⁰

C

Inten s it y( A .U .)

Wavelength ( nm ) 40K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 4.353E-7 R^2= 0.99824

y0 0 ±0

xc11.06003 ±0.00217

w1 0.04794 ±0.00381

A1 0.00043 ±0.00007

xc21.1681±0.00501

w2 0.09754 ±0.00835

A2 0.00404 ±0.00048

xc31.24751 ±0.0025

w3 0.07087 ±0.0024

A3 0.00299 ±0.00042

InAsSb QDs / SH435(2.2ML) / Annealing650

⁰

C

In te nsity (A.U.)

Wavelength ( nm ) 80K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 2.9038E-7 R^2= 0.99876

y0 0 ±0

xc11.0589±0.00256

w1 0.05304 ±0.003

A1 0.00066 ±0.00007

xc21.13623 ±0.00266

w2 0.06588 ±0.00523

A2 0.00212 ±0.00033

xc31.20753 ±0.00266

w3 0.07797 ±0.00242

A3 0.00405 ±0.00028

InAsSb QDs / SH435(2.2ML) / Annealing650

⁰

C

In te nsity (A.U.)

Wavelength ( nm ) 120K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 8.9876E-8 R^2= 0.99947

y0 0 ±0

xc11.04733 ±0.00073

w1 0.04544 ±0.00118

A1 0.00063 ±0.00003

xc21.10747 ±0.00142

w2 0.04204 ±0.00614

A2 0.00026 ±0.00011

xc31.15165 ±0.00175

w3 0.09456 ±0.00173

A3 0.00427 ±0.00015

InAsSb QDs / SH435(2.2ML) / Annealing650

⁰

C

In te nsity (A.U.)

Wavelength ( nm ) 160K 0.055

Data: A2_100K

Model: Gauss

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 3.6589E-7 R^2= 0.99844

y0 0 ±0

xc11.05655 ±0.00182

w1 0.0451±0.00351

A1 0.00041 ±0.00007

xc21.16491 ±0.00664

w2 0.09851 ±0.00956

A2 0.00423 ±0.00062

xc31.23626 ±0.00264

w3 0.06619 ±0.00343

A3 0.00237 ±0.00056

InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

Inte nsi ty(A.U .)

Wavelength ( nm )

100K

圖3-11 InAsSb(2.2ML)-Annealing 700

^O

C ~ Gaussian function 擬合PL圖 Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.6494E-6 R^2= 0.99437

y0 0 ±0

xc11.17668 ±0.00404

w1 0.08604 ±0.00424

A1 0.00416 ±0.00037

xc21.25413 ±0.00262 w2 0.0704±0.0027 A2 0.0037±0.00037

InAsSb QDs / SH435(2.2ML) / Annealing700

⁰

C

In tens it y (A. U .)

Wavelength ( nm ) 20K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 9.728E-7 R^2= 0.99578

y0 0 ±0

xc11.17493 ±0.00365

w1 0.08486 ±0.00379

A1 0.00356 ±0.00029

xc21.25035 ±0.00224

w2 0.06897 ±0.00229

A2 0.00325 ±0.00029

InAsSb QDs / SH435(2.2ML) / Annealing700

⁰

C

Inte n sity( A.U.)

Wavelength ( nm ) 40K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 4.472E-7 R^2= 0.9973

y0 0 ±0

xc11.16481 ±0.0035

w1 0.08081 ±0.00338

A1 0.00284 ±0.00024

xc21.23368 ±0.00212

w2 0.06662 ±0.002

A2 0.00262 ±0.00024

InAsSb QDs / SH435(2.2ML) / Annealing700

⁰

C

Int ensity(A .U.)

Wavelength ( nm ) 80K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 5.0008E-7 R^2= 0.99716

y0 0 ±0

xc1 1.16875 ±0.00328

w1 0.08288 ±0.00329

A1 0.0031±0.00023

xc2 1.23787 ±0.0019

w2 0.06481 ±0.00191

A2 0.00256 ±0.00023

InAsSb QDs / SH435(2.2ML) / Annealing700

⁰

C

Int ensity(A .U.)

Wavelength ( nm ) 100K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 3.7524E-7 R^2= 0.99627

y0 0 ±0

xc1 1.15044 ±0.00788

w1 0.07773 ±0.0057

A1 0.00233 ±0.00054

xc2 1.20807 ±0.00703

w2 0.06909 ±0.00482

A2 0.00165 ±0.00054

InAsSb QDs / SH435(2.2ML) / Annealing700

⁰

C

Int ensity(A .U.)

Wavelength ( nm ) 120K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 2.0296E-7 R^2= 0.99436

y0 0 ±0

xc11.1289±0.00475

w1 0.07689 ±0.00394

A1 0.00171 ±0.00023

xc21.19434 ±0.00971 w2 0.0703±0.0079

A2 0.00063 ±0.00023

InAsSb QDs / SH435(2.2ML) / Annealing700

⁰

C

Int ensity(A .U.)

Wavelength ( nm ) 150K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.3581E-7 R^2 = 0.99146

y0 0 ±0

xc1 1.11844 ±0.00472 w1 0.08217 ±0.00428 A1 0.00125 ±0.00015 xc2 1.19076 ±0.01143 w2 0.07292 ±0.01018 A2 0.00036 ±0.00015

InAsSb QDs / SH435(2.2ML) / Annealing700

⁰

C

In te ns ity( A.U.)

Wavelength ( nm ) 180K

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 4.7618E-8 R^2= 0.98783

y0 0.00008 ±0.00002

xc1 1.1025±0.004

w1 0.07972 ±0.00433

A1 0.00057 ±0.00005

xc2 1.1749±0.00671

w2 0.06507 ±0.00702

A2 0.0002±0.00005

InAsSb QDs / SH435(2.2ML) / Annealing700

⁰

C

Inte n sity( A.U.)

Wavelength ( nm )

210K

0 50 100 150 200 250 300

InAsSb QDs / SH435(2.2ML)

Ener gy( m eV)

Temperature

Excited state Ground state

圖3-12(a) InAsSb(2.2ML)–as grown- 能階隨溫度變化圖

InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

En er gy ( m eV)

T (K)

Excited state-2 Excited state-1 Ground state

圖3-12(b) InAsSb(2.2ML)–Annealing 650

^O

C-能階隨溫度變化圖

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

64meV

Excited state Ground state

Ener gy ( m eV)

Temperature (K) 74meV

圖3-12(c) InAsSb(2.2ML)–Annealing 700

^O

C-能階隨溫度變化圖

InAsSb QDs / SH435(2.2ML)

RTA700-ES RTA700-GS ES GS

T (K)

圖3-13 InAsSb(2.2ML)–As grown 和 Annealing 700

^O

C能階隨溫度變化圖

0 50 100 150 200 250 300

Excited state-2 Excited state-1 Ground state

118meV

圖3-14(a) InAsSb(2.2ML)–As grown- three peak 擬合圖

圖3-14(b) InAsSb(2.2ML)–As grown- two peak & three peak 擬合圖

0.850.900.951.001.051.101.151.201.251.301.351.40

y No weighting Chi^2/DoF = 1.271E-7 R^2 = 0.99065

y0 0 ±0

xc1 1.04006 ±0.00097

w1 0.04272 ±0.00382

A1 0.00035 ±0.00004

xc2 1.10952 ±0.00339

w2 0.0693±0.01051

A2 0.00077 ±0.00022

xc3 1.15127 ±0.00367

w3 0.06822 ±0.00702

A3 0.00071 ±0.00019

InAsSb QDs / SH435(2.2ML)

Int e nsit y( A. U.)

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 2.0763E-7 R^2= 0.99639

y0 0 ±0

xc1 1.03297 ±0.00061

w1 0.0395±0.00131

A1 0.00046 ±0.00002

xc2 1.12401 ±0.00053

w2 0.09655 ±0.00117

A2 0.00269 ±0.00003

InAsSb QDs / SH435(2.2ML)

Inte nsi ty( A.U .)

Energy (eV)

P

0 50 100 150 200 250 300 40

50 60 70 80 90 100 110 120 130

InAsSb QDs / SH435(2.2ML)

FW HM (m e V )

T (K)

Excited state Ground state

圖3-15(a) InAsSb(2.2ML)–as grown- 半高寬隨溫度變化圖

0 50 100 150 200 250

55 60 65 70 75 80 85 90 95 100 105 110

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

FWH M (e V )

T (K)

Ground state Excited state

Excite state

圖3-15(b) InAsSb(2.2ML)–Annealing700

^O

C -半高寬隨溫度變化圖

圖3-16(a) InAsSb(2.0ML)–低溫PL圖

800 900 1000 1100 1200 1300 1400 1500 1600 -0.005

InAsSb QDs / SH454(2.0ML)

Int e ns ity (A.U .)

Wavelength ( nm )

InAsSb(2.0ML)~As grown InAsSb(2.0ML)~RTA700 20K , 3mW

900 1000 1100 1200 1300 1400 -0.005 InAsSb QDs / SH454(2.0ML)

In te n s it y( A.U .)

圖3-16(b) InAsSb(2.0ML)–室溫PL圖

^Wavelength ⁽ ^nm ⁾

800 900 1000 1100 1200 1300 1400 1500 1600 -0.005

InAsSb QDs / SH454(2.0ML)

In te nsit y(A. U. )

Wavelength ( nm )

25K

圖3-17(a) InAsSb(2.0ML)–as grown-變溫PL圖

圖3-17(b) InAsSb(2.0ML)–Annealing700

^O

C -變溫PL圖

800 900 1000 1100 1200 1300 1400 1500 1600 -0.005

InAsSb QDs / SH454(2.0ML) / Annealing700 ⁰ C

Intensi ty (A.U.)

Wavelength ( nm )

20K

圖3-18(a) InAsSb(2.2ML)-AFM平面圖

圖3-18(b) InAsSb(2.2ML)-AFM3D圖

圖3-19 InAsSb(2.2ML)–as grown和Annealing700

^O

C –室溫IV圖

InAsSb QDs / SH435(2.2ML)

SH435 - as grown

SH435(as grown) SH435(RTA700 ^O C) InAsSb QDs / SH435(2.2ML)

C(pF)

Bias(V)

T=100K F=10KHz

圖3-20(a) InAsSb(2.2ML)–as grown和Annealing700

^O

C –低溫CV圖

-0.15 -0.20 -0.25 -0.30 -0.35 -0.40

2x10

¹⁶

InAsSb QDs / SH435(2.2ML)

N ( cm -3 )

Depth(um)

SH435(as grown) SH435(RTA700 ^O C)

圖3-20(b) InAsSb(2.2ML)–as grown和Annealing700

^O

C –低溫CV轉縱深圖

-4 -3 -2 -1 0 150

200 250 300 350 400 450

C (pF )

Bias (V)

sh435(2.2ML) F:10KHz

325K 300K 250K 200K 150K 120K 85K

圖3-21(a) InAsSb(2.2ML)–as grown–變溫CV圖

-0.15 -0.20 -0.25 -0.30 -0.35 4.0x10 ¹⁶

6.0x10 ¹⁶ 8.0x10 ¹⁶ 1.0x10 ¹⁷ 1.2x10 ¹⁷ 1.4x10 ¹⁷

N (cm -3 )

Depth ( μ m)

sh435(2.2ML) F:10KHz

325K 300K 250K 200K 150K 120K 85K

圖3-21(b) InAsSb(2.2ML)–as grown–變溫CV轉縱深圖

-4 -3 -2 -1 0 100

150 200 250 300 350 400

InAsSb QDs / SH435(2.2ML)/RTA700 ^O C

100K 150K 200K 250K 300K F: 10KHz

C(pF)

Bias(V)

圖3-22(a) InAsSb(2.2ML)–Annealing700

^O

C–變溫CV圖

-0.15 -0.20 -0.25 -0.30 -0.35 -0.40

3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶ 6x10 ¹⁶ 7x10 ¹⁶ 8x10 ¹⁶ 9x10 ¹⁶ 10 ¹⁷

InAsSb QDs / SH435(2.2ML)/RTA700 ^O C

N ( cm -3 )

Depth(um)

100K 150K 200K 250K 300K F: 10KHz

圖3-22(b) InAsSb(2.2ML)–Annealing700

^O

C–變溫CV轉縱深圖

-4 -3 -2 -1 0 100

150 200 250 300 350 400 450 500

InAsSb QDs / SH435(2.2ML)/RTA700 ^O C

C( pF )

Bias(V)

1kHz 3kHz 5kHz 10kHz 50kHz 100kHz T=300K

圖3-23(a) InAsSb(2.2ML)–Annealing700

^O

C–室溫CV圖

-0.15 -0.20 -0.25 -0.30 -0.35

3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶ 6x10 ¹⁶ 7x10 ¹⁶ 8x10 ¹⁶

5kHz 10kHz 50kHz 100kHz T=300K

InAsSb QDs / SH435(2.2ML)/RTA700 ^O C

N ( cm -3 )

Depth(um)

圖3-23(b) InAsSb(2.2ML)–Annealing700

^O

C–室溫CV轉縱深圖

50 100 150 200 250 300 350 400 -0.10

-0.05 0.00 0.05 0.10

InAsSb QDs / SH435(2.2ML)

Δ C ( p F )

T (K) bias:0~-3.5V

τ =8.6ms filling pulse:10ms

sh435(2.2ML)

圖3-24(a) InAsSb(2.2ML)- As grown –大偏壓範圍下之DLTS圖

100 200 300 400

-1.0 -0.8 -0.6 -0.4 -0.2 0.0

bias:0~-3.5V τ =8.6ms filling pulse:10ms

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

Δ C (pF) 8.6ms

4.3ms

T (K)

圖3-24(b) InAsSb(2.2ML)- Annealing700

^O

C –大偏壓範圍下之DLTS圖

100 150 200 250 300 350 400 -0.04

-0.02 0.00 -0.04 -0.02 0.00 -0.04 -0.02 0.00 -0.04 -0.02 0.00 -0.6 -0.3 0.0 -0.6 -0.3 0.0

-2.5~-3.0V

T (K)

E2

-2.0~-2.5V -1.5~-2.0V

Δ C (pF ) ^-1.0~-1.5V

-0.5~-1.0V

InAsSb QDs / Relaxed after Annealing700 ⁰ C Rate window:8.6ms ; Filling pulse :10ms

-0.0~-0.5V E1

圖3-25 InAsSb(2.2ML)- Annealing700

^O

C –各偏壓範圍下之DLTS圖

100 200 300 400 -0.8

-0.6 -0.4 -0.2 0.0

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

Δ C (pF )

Filling pulse: 10ms Rate window:

43ms T=341.8K 21.5ms T=354.0K 8.6ms T=368.0K 4.3ms T=382.3K

T (K)

-0.0~-0.5V

圖3-26(a) InAsSb(2.2ML)- Annealing700

^O

C –E1缺陷各速度視窗下之DLTS圖

2.6 2.7 2.8 2.9 3.0

6 7 8 9

bias: -0.0~-0.5V E1=0.60eV

σ =4.52E-16cm ²

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

ln τ T 2 (sK 2 )

1000/T (K ^-1 )

圖3-26(b) InAsSb(2.2ML)- Annealing700

^O

C – E1缺陷之Arrhenius plot

100 200 300 400 -0.045

-0.040 -0.035 -0.030 -0.025 -0.020 -0.015 -0.010 -0.005 0.000 0.005 0.010

Filling pulse :10ms Rate window:

43ms T=272K 21.5ms T=286K 8.6ms T=304K 4.3ms T=316K -2.0~-2.5V

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

Δ C (pF )

T (K)

圖3-27(a) InAsSb(2.2ML)- Annealing700

^O

C –E2缺陷各速度視窗下之DLTS圖

3.1 3.2 3.3 3.4 3.5 3.6 3.7 6

7 8

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

bias: -2.0~-2.5V E2=0.33eV

σ =2.04E-18cm ²

ln τ T 2 (sK 2 )

1000/T (K ^-1 )

圖3-27(b) InAsSb(2.2ML)- Annealing700

^O

C – E2缺陷之Arrhenius plot

2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 10 ¹

10 ² 10 ³ 10 ⁴ 10 ⁵ 10 ⁶ 10 ⁷

E2 Relaxed InAsSb QDs &

Relaxed after AnnealingInAsSb QDs

ln τ T 2 (s K 2 )

1000/T (K ^-1 )

E1

Arrhenius plot

圖3-28(a) Relaxed after annealing InAsSb 與 Relaxed InAsSb QDS ~E1與E2缺陷之Arrhenius plot比較

Bottom GaAs Top GaAs

0.60eV 0.33eV

圖3-28(b) Relaxed after annealing InAsSb 能帶圖

1000 1100 1200 1300 1400

0.000 InAsSb QDs / SH438(2.8ML)

Int ensity(A.U.)

Wavelength ( nm )

25K

1000 1100 1200 1300 1400

0.0000 0.0005 0.0010 0.0015

InAsSb QDs / SH438(2.8ML)

Inten s it y(A.U .)

Wavelength ( nm )

320mW

900 1000 1100 1200 1300 1400

0.000 InAsSb QDs / SH438(2.8ML)

In ten s ity(A. U .)

Wavelength ( nm )

130mW

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH438(2.8ML) / Annealing650 ⁰ C

Intensity(A.U.)

Wavelength ( nm )

20k

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH438(2.8ML) / Annealing650 ⁰ C

In tensi ty(A .U. )

Wavelength ( nm )

260mW

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH438(2.8ML) / Annealing650 ⁰ C

Intensity(A.U.)

Wavelength ( nm )

20.6mW

800 900 1000 1100 1200 1300 1400 1500 1600 -0.005

InAsSb QDs / SH438(2.8ML) / Annealing700 ⁰ C

In te n s it y (A. U. )

Wavelength ( nm )

20k

800 900 1000 1100 1200 1300 1400 1500 1600 0.000

InAsSb QDs / SH438(2.8ML) / Annealing700 ⁰ C

Int e nsit y(A. U.)

Wavelength ( nm )

650mW

800 900 1000 1100 1200 1300 1400 1500 1600 -0.005

InAsSb QDs / SH438(2.8ML) / Annealing700 ⁰ C

In te nsi ty(A.U. )

Wavelength ( nm )

6.5mW

800 900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH435(2.2ML) / Annealing750 ⁰ C

Inte nsi ty(A.U.)

Wavelength ( nm )

20K

800 900 1000 1100 1200 1300 1400 1500 1600 0.000 InAsSb QDs / SH438(2.8ML) / Annealing750 ⁰ C

In te n s it y(A.U .)

Wavelength ( nm )

圖4-4 (b) Relaxed InAsSb-Annealing750

^O

C –室溫PL圖

800 900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH438(2.8ML) / Annealing750 ⁰ C

Intensit y(A. U. )

Wavelength ( nm )

0.326mW

800 900 1000 1100 1200 1300 1400 1500 1600 -0.005

0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035

InAsSb QDs / SH438(2.8ML)

Inten s ity(A.U.)

Wavelength ( nm )

130mW as grown RTA650 RTA700 RTA750

20K,low power

圖4-5 Relaxed InAsSb -四片熱退火樣品–低溫PL圖

900 1000 1100 1200 1300 1400 1500 -0.005

0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 0.050 0.055

SH438

SH438-RTA650 SH438-RTA700 SH438-RTA750

300k, 26mW

InAsSb QDs / SH438(2.8ML)

Inte nsity(A.U.)

Wavelength ( nm )

圖4-6 Relaxed InAsSb -四片熱退火樣品–室溫PL圖

圖4-7 Relaxed InAsSb -as grown ~ Gaussian function 擬合

0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 -0.002

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.8617E-10 R^2 = 0.99473

y0 0 ±0

xc1 1.00141 ±0.00028 w1 0.03334 ±0.00089 A1 0.00002 ±8.8582E-7 xc2 1.06212 ±0.00173 w2 0.09643 ±0.00262 A2 0.00004 ±1.1193E-6

InAsSb QDs / SH438(2.8ML)

In te n sity (A .U.)

Energy (eV)

210K

0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 0.000

0.001 InAsSb QDs / SH438(2.8ML)

Data: A300k13_250K Model: Gauss

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 6.3933E-11 R^2 = 0.98811

y0 0 ±0

xc1 0.98749 ±0.00036 w1 0.03307 ±0.0011 A1 8.6361E-6 ±4.8273E-7 xc2 1.05509 ±0.00279 w2 0.09581 ±0.00486 A2 0.00001 ±6.1777E-7

In te n s it y (A .U. )

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.4332E-10 R^2 = 0.99205

y0 0 ±0

xc1 0.97157 ±0.00025

w1 0.03016 ±0.0007

A1 0.00002 ±5.1542E-7

xc2 1.04177 ±0.00193

w2 0.10867 ±0.00331

A2 0.00002 ±7.5186E-7

Energy (eV)

InAsSb QDs / SH438(2.8ML)

In ten s it y (A. U. )

300K

0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 -0.002 0.007

Data: A300k13_25K

Model: Gauss Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF= 2.1648E-8 R^2= 0.99442

y0 0 ±0

xc11.03732 ±0.00041 w10.0296±0.00122 A10.00013 ±8.772E-6 xc21.0978±0.00112 w20.08419 ±0.00197 A20.00048 ±0.00001

InAsSb QDs / SH438(2.8ML)

In te ns ity(A.U .)

Energy (eV)

25K

0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 -0.002

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF= 1.5913E-8 R^2= 0.99249

y00±0

xc11.03138 ±0.00047 w10.02962 ±0.00142 A10.00009 ±7.2913E-6 xc21.09255 ±0.00127 w20.08704 ±0.00221 A20.00037 ±9.3908E-6

InAsSb QDs / SH438(2.8ML)

In te n s ity (A .U.)

Energy (eV)

80K

0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 -0.002 0.007

Data: A300k13_180K

Model: Gauss

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.2297E-9 R^2= 0.99213

y0 0 ±0

xc1 1.00967 ±0.00042 w1 0.03357 ±0.00131 A1 0.00003 ±2.3309E-6 xc2 1.06521 ±0.00193 w2 0.09554 ±0.00263 A2 0.00009 ±2.9073E-6

InAsSb QDs / SH438(2.8ML)

In te n sity( A .U.)

Energy (eV)

180K

0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 -0.002

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF= 1.9343E-8 R^2= 0.99324

y00 ±0

xc11.03409 ±0.00045 w10.02983 ±0.00135 A10.00011 ±8.2547E-6 xc21.09512 ±0.00123 w20.08577 ±0.00215 A20.00042 ±0.00001

InAsSb QDs / SH438(2.8ML)

In te n s it y (A .U. )

Energy (eV)

60K

0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 -0.001 0.007

Data: A300k13_150K

Model: Gauss

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 8.1831E-9 R^2 = 0.98776

y0 0 ±0

xc1 1.01582 ±0.00056

w1 0.02894 ±0.0017

A1 0.00005 ±4.8518E-6

xc2 1.07341 ±0.00165

w2 0.09232 ±0.0026

A2 0.00022 ±6.5012E-6

InAsSb QDs / SH438(2.8ML)

In te n s ity( A. U.)

Energy (eV)

150K

圖4-8 Relaxed InAsSb - Annealing700

^O

C ~ Gaussian function 擬合

0.035

Data: A6_150K

Model: Gauss Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF= 5.7155E-8 R^2= 0.99887

y0 0 ±0

xc11.06127 ±0.00341 w10.07923 ±0.00396 A10.00065 ±0.00005 xc21.121±0.00066 w20.04829 ±0.00178 A20.00081 ±0.00009 xc31.17437 ±0.00284 w30.09438 ±0.00303 A30.00173 ±0.00009

InAsSb QDs / SH438(2.8ML) / Annealing700

⁰

C

Int ensit y(A. U. )

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 5.3458E-9 R^2= 0.97166 y0 2.4024E-6 ±0.00004

xc1 1.14425 ±0.00222

w1 0.04535 ±0.00843

A1 0.00003 ±0.00001

xc2 1.2229±0.00415

w2 0.05173 ±0.01262

A2 0.00002 ±0.00001

xc3 1.23762 ±0.01082

w3 0.14545 ±0.01849

A3 0.00015 ±0.00003

InAsSb QDs / SH438(2.8ML) / Annealing700

⁰

C

In te n s ity (A.U .) 0.035

Data: A6_20K

Model: Lorentz Equation: y = y0 + (2*A/PI)*(w/(4*(x-xc)^2 + w^2)) Weighting:

y No weighting Chi^2/DoF = 8.7724E-7 R^2= 0.98987

y0 0 ±0

xc1 1.06478 ±0.00367

w1 0.02658 ±0.01339

A1 0.0001±0.00005

xc2 1.14396 ±0.00074

w2 0.08299 ±0.00315

A2 0.00392 ±0.00016

xc3 1.2386±0.00236

w3 0.08945 ±0.00738

A3 0.00154 ±0.00014

InAsSb QDs / SH438(2.8ML) / Annealing700

⁰

C

Int ensit y(A. U. ) 0.035

Data: A6_80K

Model: Gauss Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.043E-7 R^2= 0.99836

y0 0 ±0

xc11.07084 ±0.00582

w1 0.08761 ±0.00636

A1 0.00071 ±0.00008

xc21.13417 ±0.00076

w2 0.05418 ±0.00186

A2 0.00117 ±0.00012

xc31.20456 ±0.00272 w3 0.1104±0.00339

A3 0.00205 ±0.00009

InAsSb QDs / SH438(2.8ML) / Annealing700

⁰

C

Int ensit y(A. U. ) 0.035

Data: A6_100K

Model: Gauss Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF= 7.8751E-8 R^2= 0.9986

y00 ±0

xc11.06518 ±0.00466 w10.08026 ±0.00512 A10.00065 ±0.00007 xc21.12952 ±0.00082 w20.05475 ±0.00195 A20.00113 ±0.00012 xc31.19623 ±0.00285 w30.10138 ±0.00329 A30.00179 ±0.00009

InAsSb QDs / SH438(2.8ML) / Annealing700

⁰

C

Int ensit y(A. U. ) 0.035

Data: A6_60K

Model: Gauss Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 1.3263E-7 R^2= 0.99817

y0 0 ±0

xc11.07107 ±0.00542

w1 0.08348 ±0.00599

A1 0.00075 ±0.00009

xc21.13895 ±0.00084

w2 0.05739 ±0.00183

A2 0.00151 ±0.00014

xc31.21776 ±0.00271

w3 0.11113 ±0.00355

A3 0.00204 ±0.00009

InAsSb QDs / SH438(2.8ML) / Annealing700

⁰

C

Int ensit y(A. U. ) 0.035

Data: A6_180K

Model: Gauss

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF = 3.2921E-8 R^2 = 0.99605

y0 0 ±0

xc1 1.04147 ±0.00438 w1 0.07269 ±0.00505 A1 0.0003±0.00004 xc2 1.10187 ±0.00125 w2 0.04705 ±0.00382 A2 0.00033 ±0.0001 xc3 1.14543 ±0.00902 w3 0.08652 ±0.00821 A3 0.00058 ±0.00011

InAsSb QDs / SH438(2.8ML) / Annealing700

⁰

C

Int ensit y(A. U. )

Equation: y=y0 + (A/(w*sqrt(PI/2)))*exp(-2*((x-xc)/w)^2) Weighting:

y No weighting Chi^2/DoF= 2.0971E-8 R^2= 0.99236

y0 0 ±0

xc11.02846 ±0.00423 w10.06658 ±0.00518 A10.00018 ±0.00002 xc21.08959 ±0.00159 w20.04642 ±0.00483 A20.00019 ±0.00007 xc31.13419 ±0.01329 w30.08981 ±0.01257 A30.00029 ±0.00008

InAsSb QDs / SH438(2.8ML) / Annealing700

⁰

C

In te n s ity (A.U .)

Energy (eV)

210K

0 50 100 150 200 250 300 950

1000 1050 1100 1150 1200 1250

InAsSb QDs / SH438(2.8ML)

70meV

Ener gy (m eV)

T (K)

Excited state Ground state

60meV

圖4-9(a) Relaxed InAsSb–as grown- 能階隨溫度變化圖

0 50 100 150 200 250 300

950 1000 1050 1100 1150 1200 1250

45meV

InAsSb QDs / SH438(2.8ML) / Annealing700 ⁰ C

Energy (meV )

T (K)

Excited state-2 Excited state-1 Ground state 90meV

34meV

圖4-9(b) Relaxed InAsSb–Annealing700

^O

C - 能階隨溫度變化圖

0 50 100 150 200 250 300 30

60 90 120 150

Excited state Ground state

InAsSb QDs / SH438(2.8ML)

FWHM(meV )

T (K)

圖4-10(a) Relaxed InAsSb–as grown -半高寬隨溫度變化圖

0 50 100 150 200 250 300

30 60 90 120 150

InAsSb QDs / SH438(2.8ML) / Annealing700 ⁰ C

FWHM(meV)

T (K)

Excited state-2 Ground state Excited state-1

圖4-10(b) Relaxed InAsSb–Annealing700

^O

C -半高寬隨溫度變化圖

1000 1100 1200 1300 1400 1500 0.000

0.001 0.002 0.003 0.004 0.005 0.006 0.007

0.008

3.3 ML

In te n s it y (a .u .)

Wavelength (nm)

10 mW 50 mW 100 mW 500 mW 300 K ^{1215 nm}

圖4-11 (a) Relaxed InAs-as grown–室溫PL圖

900 1000 1100 1200 1300 1400 1500 0.00

0.01 0.02 0.03 0.04 0.05 0.06

1115 nm 1170 nm

300 K

3.3 ML annealing 700 C

Inten si ty (a .u .)

Wavelength (nm)

1.3 mW 10 mW 130 mW -1.3

圖4-11 (b) Relaxed InAs- Annealing700

^O

C–室溫PL圖

InAsSb QDs / SH438(2.8ML)

as grown

InAsSb QDs / SH438(2.8ML)

C(pF)

Bias(V)

圖4-13(a) Relaxed InAsSb–各熱退火溫度下-低溫CV圖

-0.10 -0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -0.45 -0.50 2x10

¹⁶

InAsSb QDs / SH438(2.8ML)

N ( cm -3 )

-5 -4 -3 -2 -1 0

50 100 150 200 250 300

2KHz 5KHz 10KHz 50KHz 100KHz 100K

InAsSb QDs / SH438(2.8ML)/RTA650 ^O C

C(pF)

Bias(V)

圖4-14(a) Relaxed InAsSb–Annealing650

^O

C–低溫CV圖

-0.1 -0.2 -0.3 -0.4 -0.5

2x10 ¹⁶ 3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶ 6x10 ¹⁶

InAsSb QDs / SH438(2.8ML)/RTA650 ^O C

N ( cm -3 )

Depth(um)

2KHz 5KHz 10KHz 50KHz 100KHz 100K

圖4-14(b) Relaxed InAsSb–Annealing650

^O

C–低溫CV轉縱深圖

-4 -3 -2 -1 0

0 50 100 150 200 250 300 350 400 450

InAsSb QDs / SH438(2.8ML)/RTA700 ^O C

C(pF)

Bias(V)

1KHz 5KHz 10KHz 50KHz 100KHz

108K

圖4-15(a) Relaxed InAsSb–Annealing700

^O

C–低溫CV圖

-0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -0.45

2x10 ¹⁶ 3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶ 6x10 ¹⁶ 7x10 ¹⁶ 8x10 ¹⁶

5KHz 10KHz 50KHz 100KHz

108K

InAsSb QDs / SH438(2.8ML)/RTA700 ^O C

N ( cm -3 )

Depth(um)

圖4-15(b) Relaxed InAsSb–Annealing700

^O

C–低溫CV轉縱深圖

-5 -4 -3 -2 -1 0

100 150 200 250 300 350

InAsSb QDs / SH438(2.8ML)/RTA750 ^O C

C(pF)

Bias(V)

1kHz 5kHz 10kHz 50kHz 100kHz 100K

圖4-16(a) Relaxed InAsSb–Annealing750

^O

C–低溫CV圖

-0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -0.45

2x10 ¹⁶ 3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶ 6x10 ¹⁶ 7x10 ¹⁶

100K 1kHz 5kHz 10kHz 50kHz 100kHz

InAsSb QDs / SH438(2.8ML)/RTA750 ^O C

N ( cm -3 )

Depth(um)

圖4-16(b) Relaxed InAsSb–Annealing750

^O

C–低溫CV轉縱深圖

-5 -4 -3 -2 -1 0 1

50 100 150 200

F:10KHz 100K 120K 150K 200K 250K 300K

InAsSb QDs / SH438(2.8ML)/RTA650 ^O C

C( pF )

Bias(V)

圖4-17(a) Relaxed InAsSb–Annealing650

^O

C–變溫CV圖

-0.10 -0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -0.45 -0.50 10 ¹⁶

2x10 ¹⁶ 3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶

InAsSb QDs / SH438(2.8ML)/RTA650 ^O C

N ( cm -3 )

Depth(um)

F=10KHz 100K 120K 150K 200K 250K 300K

圖4-17(b) Relaxed InAsSb–Annealing650

^O

C–變溫CV轉縱深圖

-4 -3 -2 -1 0

50 100 150 200 250 300 350 400

108K 120K 150K 200K 250K 300K

50KHz

InAsSb QDs / SH438(2.8ML)/RTA700 ^O C

C(pF)

Bias(V)

圖4-18(a) Relaxed InAsSb–Annealing700

^O

C–變溫CV圖

-0.10 -0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -0.45

2x10 ¹⁶ 3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶

108K 120K 150K 200K 250K 300K 50KHz

InAsSb QDs / SH438(2.8ML)/RTA700 ^O C

N ( cm -3 )

Depth(um)

圖4-18(b) Relaxed InAsSb–Annealing700

^O

C–變溫CV轉縱深圖

-5 -4 -3 -2 -1 0

100 150 200 250 300 350 400

100K 120K 150K 200K 250K 300K

InAsSb QDs / SH438(2.8ML)/RTA750 ^O C

C(pF)

Bias(V)

F: 10KHz

圖4-19(a) Relaxed InAsSb–Annealing750

^O

C–變溫CV圖

-0.1 -0.2 -0.3 -0.4

2x10 ¹⁶ 3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶ 6x10 ¹⁶ 7x10 ¹⁶ 8x10 ¹⁶

InAsSb QDs / SH438(2.8ML)/RTA750 ^O C

N ( cm -3 )

Depth(um)

100K 120K 150K 200K 250K 300K F: 10KHz

圖4-19(b) Relaxed InAsSb–Annealing750

^O

C–變溫CV轉縱深圖

-8 -7 -6 -5 -4 -3 -2 -1 0 1

50 100 150 200 250 300

1KHz 5KHz 10KHz 50KHz 100KHz

InAsSb QDs / SH438(2.8ML)/RTA650 ^O C

C(pF)

Bias(V)

300k

圖4-20(a) Relaxed InAsSb–Annealing650

^O

C–室溫CV圖

-0.10 -0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -0.45 -0.50 -0.55 2x10 ¹⁶

3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶

InAsSb QDs / SH438(2.8ML)/RTA650 ^O C

N ( cm -3 )

Depth(um)

1KHz 5KHz 10KHz 50KHz 100KHz 300K

圖4-20(b) Relaxed InAsSb–Annealing650

^O

C–室溫CV轉縱深圖

-4 -3 -2 -1 0

100 150 200 250 300 350 400

5KHz 10KHz 50KHz 100KHz

300K

InAsSb QDs / SH438(2.8ML)/RTA700 ^O C

C(pF)

Bias(V)

圖4-21(a) Relaxed InAsSb–Annealing700

^O

C–室溫CV圖

-0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -0.45

2x10 ¹⁶ 3x10 ¹⁶ 4x10 ¹⁶ 5x10 ¹⁶ 6x10 ¹⁶ 7x10 ¹⁶

5KHz 10KHz 50KHz 100KHz

300K

InAsSb QDs / SH438(2.8ML)/RTA700 ^O C

N ( cm -3 )

Depth(um)

圖4-21(b) Relaxed InAsSb–Annealing700

^O

C–室溫CV轉縱深圖

-6 -5 -4 -3 -2 -1 0

100 150 200 250 300

300K 100KHz 50KHz 10KHz 5KHz 4KHz 3KHz

InAsSb QDs / SH438(2.8ML)/RTA750 ^O C

C(pF)

Bias(V)

圖4-22(a) Relaxed InAsSb–Annealing750

^O

C–室溫CV圖

-0.15 -0.20 -0.25 -0.30 -0.35 -0.40 -0.45 -0.50

2x10 ¹⁶ 4x10 ¹⁶ 6x10 ¹⁶ 8x10 ¹⁶ 10 ¹⁷ 1.2x10 ¹⁷ 1.4x10 ¹⁷ 1.6x10 ¹⁷ 1.8x10 ¹⁷ 2x10 ¹⁷

100KHz 50KHz 10KHz 5KHz 4KHz

InAsSb QDs / SH438(2.8ML)/RTA750 ^O C

N ( cm -3 )

Depth(um)

300K

圖4-22(b) Relaxed InAsSb–Annealing750

^O

C–室溫CV圖

-0.15 -0.10 -0.050.00 -0.10 -0.050.00 -0.3-0.2 -0.10.0 -0.6 -0.3 0.0

-0.10 -0.05 0.00

100 150 200 250 300 350 400 -0.06

-0.03 0.00

bias:-1.5~-2V bias:-1~-1.5V

E2

bias:-0.5~-1V

bias:0~-0.5V

E1

bias:-2~-2.5V

bias:-2.5~-3.5V

T (K)

sh438(2.8ML)

Rate window:8.6ms ; Filling pulse :10ms

Δ C (pF)

圖4-23 Relaxed InAsSb(2.8ML)~各偏壓範圍下之DLTS圖

圖4-24(a) Relaxed InAsSb(2.8ML)~HRTEM(未經傅立葉轉換)

TOP

圖4-24(b) Relaxed InAsSb(2.8ML)~HRTEM(經傅立葉轉換)

100 150 200 250 300 350 400 450

-0.10

filling pulse tp 0.1m s

100 150 200 250 300 350 400 450

-0.10

filling pulse tp 0.1m s

200 250 300 350 400

-1.6

filling pulse tp 0.1ms

100 150 200 250 300 350 400 450

-0.10

filling pulse tp

0.1ms

0 1 2 3 4 5

-3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5

0.0

InAsSb QDs / SH438(2.8ML)

p

(ms)

ln(1-S(t p )/ S(8 ))

τ=8.6 ms C=0.607(ms) ^-1 ,T=287K τ=4.3 ms C=0.894(ms) ^-1 ,T=300K τ=2.15 ms C=1.262(ms) ^-1 ,T=312K τ=0.86 ms C=1.751(ms) ^-1 ,T=328K

圖4-26(a) Relaxed InAsSb~不同速率視窗之對應溫度及其捕捉速率

3.0 3.1 3.2 3.3 3.4 3.5

-50.0 -49.5 -49.0

InAsSb QDs / SH438(2.8ML)

1000/T (1/K)

ln( σ ) (cm 2 )

_σ

=0.21eV

圖4-26(b) Relaxed InAsSb~捕捉位能障擬合

Relaxed InAsSb QDs (as grown) GaAs

GaAs

0.21eV

E

^53meV

0.16eV

0.263eV

0.103eV Capture barrier

圖4-27 Relaxed InAsSb~修正後之能帶圖

100 150 200 250 300 350 400 -0.06

-0.03 0.00 0.03 -0.06 -0.03 0.00 0.03 -0.06 -0.03 0.00 0.03 -0.06 -0.03 0.00 0.03 -0.4 -0.2 0.0 -0.8 -0.4 0.0

bias:-2 .5 ~-3 .0 V

T (K )

bias:-2.0~-2.5V bias:-1.5~-2V

Δ C (pF )

b ia s:-0 .5 ~ -1V

b ia s:-1 .0 ~ -1.5V bias:-0 ~-0 .5 V

R ela xed InA sS b Q D s / A nnealing650 ⁰ C R ate w in d o w :8.6m s ; F illin g p u lse :1 0 m s

圖4-28 Relaxed InAsSb(2.8ML)~ Annealing650

^O

C~各偏壓範圍下之DLTS圖

-0.10 -0.05 0.00 -0.05 0.00 -0.05 0.00 -0.05 0.00 -0.2-0.10.00.1 -0.2 0.0

bias:-2.5~-3.0V

Δ C (pF)

bias:-2.0~-2.5V bias:-1.5~-2.0V bias:-1.0~-1.5V

bias:-0.5~-1.0V bias:-0~-0.5V

Relaxed InAsSb QDs / Annealing700 ⁰ C Rate window:8.6ms ; Filling pulse:10ms

1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0

- 0 . 0 6 - 0 . 0 3 0 . 0 0 - 0 . 0 6 - 0 . 0 3 0 . 0 0 - 0 . 0 6 - 0 . 0 3 0 . 0 0 0 . 0 3

b i a s : - 4 . 0 ~ - 4 . 5 V

T ( K )

b i a s : - 3 . 5 ~ - 4 . 0 V b i a s : - 3 . 0 ~ - 3 . 5 V

圖4-29 Relaxed InAsSb(2.8ML)~ Annealing700

^O

C~各偏壓範圍下之DLTS圖

-0.06 -0.03 0.00 -0.06 -0.03 0.00 -0.06 -0.03 0.00 -0.06 -0.03 0.00 -1.0 -0.5 0.0 -1.0 -0.5 0.0

bias:-2.5~-3.0V bias:-2.0~-2.5V

bias:-1.5~-2.0V

Δ C (pF)

bias:-1.0~-1.5V bias:-0.5~-1.0V bias:-0~-0.5V

Relaxed InAsSb QDs /Annealing750 ⁰ C Rate window:8.6ms ; Filling pulse:10ms

1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0 4 0 0

- 0 . 0 6 - 0 . 0 3 0 . 0 0 - 0 . 1 0 - 0 . 0 5 0 . 0 0 - 0 . 1 5 - 0 . 1 0 - 0 . 0 5 0 . 0 0 - 0 . 1 5 - 0 . 1 0 - 0 . 0 5 0 . 0 0

b i a s : - 4 . 5 ~ - 5 . 0 V

T ( K )

b i a s : - 4 . 0 ~ - 4 . 5 V b i a s : - 3 . 5 ~ - 4 . 0 V b i a s : - 3 . 0 ~ - 3 . 5 V

圖4-30 Relaxed InAsSb(2.8ML)~ Annealing750

^O

C~各偏壓範圍下之DLTS圖

100 200 300

-0.08 -0.07 -0.06 -0.05 -0.04 -0.03 -0.02 -0.01 0.00 0.01 0.02

Filling pulse:10ms Rate window:

8.6ms T=218K 4.3ms T=238K 2.15ms T=248K 0.86ms T=274K Bias: -1.0~-1.5V

InAsSb QDs / SH438(2.8ML) / Annealing650 ⁰ C

Δ C (pF )

T (K)

圖4-31(a) Relaxed InAsSb(2.8ML)~ Annealing650

^O

量子點附近偏壓下各速度視窗之DLTS圖

3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4

5 6

InAsSb QDs / SH438(2.8ML) / Annealing650 ⁰ C

bias: -1.0~-1.5V E2=0.2eV

σ =1.69E-19cm ²

ln τ T 2 (sK 2 )

1000/T (K ^-1 )

圖4-31(b) Relaxed InAsSb(2.8ML)~ Annealing650

^O

量子點附近偏壓下之Arrhenius plot

100 200 300 400

-0.050 -0.045 -0.040 -0.035 -0.030 -0.025 -0.020 -0.015 -0.010 -0.005

Bias: -1.5~-2.0V Filling pulse:10ms Rate window:

8.6ms T=239K 4.3ms T=255K 2.15ms T=270K 0.86ms T=295K

InAsSb QDs / SH438(2.8ML) / Annealing700 ⁰ C

Δ C (pF )

T (K)

圖4-32(a) Relaxed InAsSb(2.8ML)~ Annealing700

^O

量子點附近偏壓下各速度視窗之DLTS圖

3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4

5 6

InAsSb QDs / SH438(2.8ML) / Annealing700 ⁰ C

bias: -1.5~-2.0V E2=0.21eV

σ =1.92E-19cm ²

ln τ T 2 (sK 2 )

1000/T (K ^-1 )

圖4-32(b) Relaxed InAsSb(2.8ML)~ Annealing700

^O

量子點附近偏壓下之Arrhenius plot

100 200 300 400

-0.07 -0.06 -0.05 -0.04 -0.03 -0.02 -0.01 0.00 0.01

Filliing pulse:10ms Rate window:

8.6ms T=223K 4.3ms T=235K 2.15ms T=247K 0.86ms T=265K -1.5~-2.0V

InAsSb QDs / SH438(2.8ML) / Annealing750 ⁰ C

Δ C (pF )

T (K)

圖4-33(a) Relaxed InAsSb(2.8ML)~ Annealing750

^O

量子點附近偏壓下各速度視窗之DLTS圖

3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4

5 6

InAsSb QDs / SH438(2.8ML) / Annealing750 ⁰ C

bias: -1.5~-2.0V E2=0.24eV

σ =2.42E-18cm ²

ln τ T 2 (sK 2 )

1000/T (K ^-1 )

圖4-33(b) Relaxed InAsSb(2.8ML)~ Annealing750

^O

量子點附近偏壓下之Arrhenius plot

100 150 200 250 300 350 400

-0.08 -0.06 -0.04 -0.02 0.00 0.02

bias:-3.0~-3.5V Filling pulse:10ms Rate window:

τ =8.6ms,T=269.6K τ =4.3ms,T=277.8K τ =2.15ms,T=286.1K τ =0.86ms,T=309.2K

InAsSb QDs / SH438(2.8ML) / Annealing700 ⁰ C

Δ C (pF )

T (K)

圖4-34(a) Relaxed InAsSb(2.8ML)~ Annealing700

^O

較大偏壓下各速度視窗之DLTS圖

3.2 3.3 3.4 3.5 3.6 3.7

0 1 2 3 4 5 6 7 8 9 10

InAsSb QDs / SH438(2.8ML) / Annealing700 ⁰ C

bias: -3.0~-3.5V E2=0.361eV σ =4.55E-17cm ²

τ T 2 (sK 2 )

1000/T (K ^-1 )

圖4-34(b) Relaxed InAsSb(2.8ML)~ Annealing700

^O

較大偏壓下之Arrhenius plot

100 200 300 400

-0.20 -0.15 -0.10 -0.05 0.00 0.05

InAsSb QDs / SH438(2.8ML) / Annealing750 ⁰ C

Δ C (pF )

Filling pulse:10ms Rate window:

43ms T=235.04K 21.5ms T=243.96K 8.6ms T=256.15K 4.3ms T=268.42K

T (K)

-3.5~-4.0V

圖4-35(a) Relaxed InAsSb(2.8ML)~ Annealing750

^O

較大偏壓下各速度視窗之DLTS圖

3.7 3.8 3.9 4.0 4.1 4.2 4.3 0

1 2 3 4 5 6 7 8 9

10 InAsSb QDs / SH438(2.8ML) / Annealing750 ⁰ C

bias: -3.5~-4.0V E2=0.335eV σ =2.84E-17cm ²

τ T 2 (sK 2 )

1000/T (K ^-1 )

圖4-35(b) Relaxed InAsSb(2.8ML)~ Annealing750

^O

較大偏壓下之Arrhenius plot

InAsSb QDs 2.8ML(Annealing)

0.35eV 0.2eV

GaAs

Tunneling

圖4-36 Relaxed InAsSb(2.8ML)~ Annealing後之能帶圖

參考文獻

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“1.3μm room-temperature GaAs-based quantum-dot laser” ,Appl. Phys.

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[10] G.Park,D.L.Huffaker,Z.Zou,O.B.Shchekin and D.Deppe, “Temperature Dependence of Lasing Characteristics for Long-Wavelengh(1.3μm)

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[13] J.C. Harmand, L.H. Li, G. Patriarche, and L. Travers, “GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3μm emission”,

Appl. Phys. Lett. 84, 3981 (2004).

[14] T.Kageyama,T.Miyamoto,M.Ohta,T.Matsuura,Y.Matsui,T.Furuhata, and F.Koyama, “Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200nm range grown by molecular beam epitaxy” ,J. Appl. Phys. 96,44 (2004)

[15] X. Yang, J.B. Heroux, L. F. Mei and W. I. Wang, “InGaAsNSb/GaAs quantum wells for1.55μm lasers grown by molecular-beam epitaxy” ,Appl.

Phys. Lett. 78, 4068 (2001).

[16] H. Shimizu, K. Kumada, S. Uchiyama and A. Kasukawa, “High performance CW 1.20μm GaInAsSb-SQW ridge lasers” ,Electron. Lett.

36, 1701 (2000).

[17] X. Yang, M. J. Jurkovic, J. B. Heroux and W. I. Wang, “Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers” ,Appl. Phys. Lett. 75, 178 (1999).

[18] J. M. Ripalda,D. Granados, and Y. González,”Room temperature emission at 1.6 um from InGaAs quantum dots capped with GaAsSb”, Appl. Phys.

Lett. 84, 2 (2006)

[19]Masahiko Ohta,Toru Kanto and Koichi Yamaguchi,”Self-Formation of High-Density and High-Uniformity InAs Quantum Dots”, Japanese J.

Appl. Phys.45,4B(2006)

[20] H. Y. Liu and M. J. Steer,“Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer” , Appl. Phys. Lett. 86, 143108 (2005)

[21] Hitoshi Shimizua and Shanmugam Saravanan,”Buffer-material dependence of InAs quantum dots on GaAs substrate”, Appl. Phys. Lett. 88, 041119 (2006) [22] K. Suzuki and Y. Arakawa , “Near 1.3μm Emission at Room Temperature

from InAsSb/GaAs Self-Assembled Quantum Dots on GaAs Substrates”, Appl. Phys. Stat. Sol. (b) 1, 139 (2001).

[23] Iroyuki Miyoshia,Ryo Suzukia, Hidetoshi Amanoa, Yoshiji Horikoshi “Sb surface segregation effect on the phase separation of MBE grown

InAsSb”, Journal of Crystal Growth 237–239(2002)

[24] B. P. Tinkham, B. R. Bennett, R. Magno, V. Shanabrook, and J. B. Boos

“Growth of InAsSb-channel high electron mobility transistor structures”, J.

Vac. Sci. Technol. B 234(2005)

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在文檔中熱退火於InAsSb/GaAs量子點光性及應力鬆弛引致缺陷之載子傳輸特性研究 (頁 42-109)

結論

O

O

O

0

E σ

F-vdM V-W S-K

900 1000 1100 1200 1300 1400 1500 1600 0.00

0.05 0.10 0.15 0.20 0.25 0.30

PL In ten s ity (a .u .)

Wavelength (nm)

T:300K,P:100mW sh454(2ML) sh435(2.2ML) sh438(2.8ML)

1235 1255

1285

0.3µm n-GaAs Si:6*10 16 cm -3

0.3µm n-GaAs Si:6*10 16 cm -3

n + -GaAs substrate

In Si Wafer InAsSb QDs

InAsSb QDs

GaAs GaAs

InAsSb QDs

GaAs GaAs

GPIB Interface

Laser 532nm

1.3W VNDF

Chopper

Focus lens

PC

Long-pass filter Ref. Signal

Lock-in Amplifier Monochromator

Multi-meter

1000 1100 1200 1300 1400 1500 0.0

2.0x10 -3 4.0x10 -3 6.0x10 -3 8.0x10 -3

300K 50K dots-in-well 2.7M L 10m W

int e nsit y(a.u.)

wavelength(nm)

1000 1100 1200 1300 1400 1500 0.0

1.0x10 -2 2.0x10 -2 3.0x10 -2 4.0x10 -2

1mW 100mW dots-in-well 2.7ML 300K

In te nsi ty(a .u .)

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH435(2.2ML)

Intensity( A. U.)

Wavelength ( nm )

25K

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH435(2.2ML)

In tens it y (A. U.)

Wavelength ( nm )

1040mW

900 1000 1100 1200 1300 1400

-0.005

Wavelength ( nm )

25K,low power

900 1000 1100 1200 1300 1400 0.000

0.005 0.010 0.015 0.020 0.025

30K 50K 70K 90K 120K 150K 180K 210K 240K 270K 300K

PL In te n s it y (a .u .)

1205

1288

800 900 1000 1100 1200 1300 1400 -0.005

0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045

As grown RTA650 O C RTA700 O C RTA750 O C

20K , 5.2mW InAsSb QDs / SH435(2.2ML)

Int ensit y(A.U. )

Wavelength

nm

900 1000 1100 1200 1300 1400

InAsSb QDs / SH435(2.2ML) / Annealing650 0 C

Intensity(A.U.)

Wavelength ( nm )

20K

O

900 1000 1100 1200 1300 1400 -0.005

InAsSb QDs / SH435(2.2ML) / Annealing650 0 C

In te nsit y(A.U.)

Wavelength ( nm )

82mW 52mW 13mW

300K,High power

O

^O

^O

^O

⁰

0.3µm n-GaAs Si:6*10 ¹⁶ cm ^-3

0.3µm n-GaAs Si:6*10 ¹⁶ cm ^-3

n ⁺ -GaAs substrate

In Si Wafer InAsSb　QDs

2.0x10 ^-3 4.0x10 ^-3 6.0x10 ^-3 8.0x10 ^-3

1.0x10 ^-2 2.0x10 ^-2 3.0x10 ^-2 4.0x10 ^-2

As grown RTA650 ^O C RTA700 ^O C RTA750 ^O C

InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

^O

InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

^O

InAsSb Q Ds / SH435(2.2M L) / Annealing650 ⁰ C

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

^O

0.060 InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

InAsSb QDs / SH435(2.2ML) / Annealing700 ⁰ C

InAsSb QDs / SH435(2.2ML) / Annealing750 ⁰ C

^O

InAsSb QDs / SH435(2.2ML) / Annealing750 ⁰ C

InAsSb QDs / SH435(2.2ML) / Annealing750 ⁰ C

^O

0.18 InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

InAsSb QDs / SH435(2.2ML) / Annealing650 ⁰ C

InAsSb QDs / SH435(2.2ML) / Annealing750 ⁰ C