4-1 結論
由以上之實驗結果與討論，可以歸納出以下之結論：
1. 藉由 SEM、TEM、EDX、XPS 等材料分析儀器，探討我們所實驗的鎳矽化物 材料特性。由SEM 圖可以成功的看出鎳矽化物擴散的長度以便推算出鎳矽化 物的擴散速率；由 TEM 可以看出我們矽奈米線的剖面圖，可得知經由氧化 作用後的矽奈米線直徑最低可以降到多少奈米；由EDX 成功的分析出本實驗 的鎳矽化物中，鎳原子與矽原子的成分比例為 48.32%與 51.68%，接近於一 比一；由XPS 拍攝到鎳矽化物的晶格繞射圖，比較對照過後確定鎳矽化物的 相位是NiSi。
2. 經由變溫量測實驗，計算出蕭特基接面之等效蕭特基位能障高度，並且討論 歐姆接面與蕭特基接面感測器之載子傳輸機制以及感測機制。
3. 藉由氧化作用成功的降低了矽奈米線的寬度達到縮小元件的目的，並且經由 TEM 觀測出矽奈米線直徑從約 79 nm 降低為約 22 nm 左右。
4. 為了增加帶電分子吸附的面積，成功的做出懸浮的奈米線。
5. 由於大氣中的水分子會吸附在奈米線上造成電性遲滯現象的產生，因此利用 抽真空把量測系統中的水分子移除，成功的解決了遲滯現象的發生。
6. 此實驗成功的製作出 N 型以及 P 型之奈米線歐姆接面與蕭特基接面元件感測 器，並進行電性量測分析。成功的發現到這四種元件對於閘極效應在逆向偏 壓部分很明顯。
7. 分別在鍵結帶有正電的 APTS 分子或是帶有負電的 NTA 分子下，N 型或是 P 型的奈米線歐姆接面或是蕭特基接面元件皆可因為臨界電壓明顯的位移而成 功的感測到帶電之分子，並且以蕭特基接面元件的逆向偏壓部分，臨界電壓
的位移較歐姆接面元件明顯許多，因此推論不論是N 型或是 P 型的矽奈米線 蕭特基接面元件，皆適合拿來當做感測器使用，期待未來可成為感測器的主 要元件之一。
4-2 未來展望
由以上所得到之結果，我們預測奈米線蕭特基接面所製造的元件，對於感測 帶電分子極具潛力，可能成為未來應用於生物分子感測之主要元件之一。在此，
對於未來之工作有幾項建議。
首先是研究開發更好之製程參數以及材料，實驗中所製作出之奈米線蕭特基 接面感測元件，對於生物感測而言並不見得是最佳化製程，因此研究開發更好的 製程參數來符合生物感測之需求是相當重要的。在設計元件前可以利用數值分析 模擬程式來預測奈米線蕭特基接面元件感測器之最佳化製程參數以及建立感測 機制模型。其次是即時量測(Real-time)，在本次的實驗中，量測之方式皆為靜態 量測，但對於生物檢測而言，即時量測是必須要的。相信奈米線蕭特基接面的元 件未來可以應用於生物感測器主要元件之一。
參考文獻
[1] K. Grosios, and P. Traxler, "Tyrosine kinase targets in drug discovery," Drugs Future, vol. 28, pp. 670-697, 2003.
[2] J. Becker, "Signal transduction inhibitors—a work in progress," Nat. Biotechnol., vol. 22, pp. 15-18, 2004.
[3] Y. Cui, Q. Wei, H. Park, and C. M. Lieber, "Nanowire nanosensors for highly sensitive and selective detection of biological and chemical species," Science, vol.
293, pp. 1289-1292, 2001.
[4] H. R. Byon, and H. C. Choi, "Network single-walled carbon nanotube-field effect transistors with increased Schottky contact area for highly sensitive biosensor applications," J. Am. Chem. Soc., vol. 128, pp. 2188-2189, 2006.
[5] X. Tang, S. Bansaruntip, N. Nakayama, E. Yenilmez, Y. L. Chang, and Q. Wang,
"Carbon nanotube DNA sensor and sensing mechanism," Nano Lett., vol. 6, no. 8, pp. 1632-1636, 2006.
[6] B. L. Allen, P. D. Kichambare, and A. Sta, "Carbon Nanotube Field-Effect-Transistor-Based Biosensors," Adv. Mater., vol.19, pp. 1439–1451, 2007.
[7] M. H. Yang, K. B. K. Teo, and W. I. Milne, "Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts," Appl.
Phys. Lett., vol. 87, pp. 253116-253123, 2005.
[8] B. Y. Choi, "Experimental study on self-aligned nickel silicide technology,"
SMDL Annual Report, 2003.
[9] B. Cafra, A. Alberti, L. Ottaviano, C. Bongiorno, G. Mannino, T. Kammler, and T.
Feudel, "Thermal stability of nickel silicide on silicon on insulator (SOI) material," Mater. Sci. Eng. B, vol. 114–115, pp. 228–231, 2004.
[10] A. Alberti, B. Cafra, C. Bongiorno, G. Mannino, V. Privitera, T. Kammler, T.
Feudel, "Thin nickel silicide layer formation on silicon on insulator material,"
Mater. Sci. Eng. B, vol. 114–115, pp. 42–45, 2004.
[11] A. Lauwers, J. A. Kittl, M. J. H. Van Dal, O. Chamirian, M. A. Pawlak, M. de Potter, R. Lindsay, T. Raymakers, X. Pages, B. Mebarki, T. Mandrekar, and K.
Maex, "Ni based silicides for 45 nm CMOS and beyond," Mater. Sci. Eng. B, vol.
114–115, pp. 29–41, 2004.
[12] Y. L. Jiang, G. P. Ru, W. Huang, X. P. Qu, B. Z. Li, A. Agarwal, G. Cai, J. Poate, C. Detavernier, R. L. V. Meirhaeghe, "Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation," Semicond.
Sci. Technol., vol. 20, pp. 716–719, 2005.
[13] Y. Cui, Q. Wei, H. Park, C. M. Lieber, “Nanowire nanosensors for highly
sensitive and selective detection of biological and chemical species,” Science, vol. 293, pp. 1289-1292, 2001.
[14] S. C. Chen, T. C. Chang, P. T. Liu, Y. C. Wu, P. S. Lin, B. H. Tseng, J. H. Shy, S.
M. Sze, C. Y. Chang, and C. H. Lien, "A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory," IEEE Electron Device Letters, vol. 28, no. 9, pp. 809-811, 2007.
[15] X. Duan, C. Niu, V. Sahi, J. Chen, J. W. Parce, S. Empedocles, and J. L.
Goldman, “High-performance thin-film transistors using semiconductor nanowires and nanoribbons,” Nature, vol.425, pp.274-278, 2003.
[16] Y. C. Wu, T. C. Chang, C. Y. Chang, C. S. Chen, C. H. Tu, P. T. Liu, H. W. Zan, and Y. H. Tai, "High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure," Applied Physics Letters, vol. 84, no. 19, pp. 3822-3824, 2004.
[17] M. S. Gudiksen, J. Wang, and C. M. Lieber, "Synthetic Control of the Diameter
and Length of Single Crystal Semiconductor Nanowires," J. Phys. Chem. B, pp.
4062-4064, 2001.
[18] J. Redwing, T. Mayer, "Semiconductor Nanowires: Building Blocks for Nanoscale Electronics," NSF Nanoscale Science and Engineering Grantees Conference, pp. 11-13, 2002.
[19] C. Li, Daihua, S. Han, X. Liu, T. Tang, and C. Zhou, "Daimeter-Controlled Growth of Single-Crystalline In2O3 Nanowire and Their Electronic Properties,"
Adv. Master, vol. 15, no. 2, pp. 143-146, 2003.
[20] N. Singh, A. Agarwal, L. L. Bera, T. Y. Liow, R. Yang, S. C. Rustagi, C. H.
Tung, R. Kumar, G. Q. Lo, N. Balasubramanian, and D. L. Kwong,
"High-performance fully depleted silicon nanowire (diameter ≤ 5 nm) gate-all-around CMOS devices," IEEE Electron Device Letters, vol. 27, no. 5, pp.
383-386, 2006.
[21] P. Nguyen, S. Vaddiraju, and M. Meyyappan, "Indium and Tin Oxide Nanowires by Vapor-Liquid-Solid Growth Technique," Journal of ELECTRONIC MATERIALS, vol. 35, no. 2, 2006.
[22] E. C. Dickey, T. E. Clark, X. hang, J. M. Redwing, "Size Effects in the
Vapor-Liquid Solid (VLS) Growth of Semiconductor Nanowires," Microsc Microanal pp. 14, 2008.
[23] H. K. Lin, H. A. Cheng, C. Y. Lee, and H. T. Chiu, "Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi2 Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth," Chem. Mater, vol. 21, pp. 5388–5396, 2009.
[24] H. Iwai, H. Kamimura, "Nickel silicide contact for Silicon Nanowire FET,"
Department of Electronics and Applied Physics Tokyo Institute of Technology Master Thesis, 2009.
[25] S. C. Rustagi, N. Singh, W. W. Fang, K. D. Buddharaju, S. R. Omampuliyur, S.
H. G. Teo, C. H. Tung, G. Q. Lo, N. Balasubramanian and D. L. Kwong,
"CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach," IEEE Electron Device Letters, vol. 28, no. 11, pp. 1021, 2007.
[26] A. Hubert, J. P. Colonna, S. Becu, C. Dupre, V. M. Alvaro, J. M. Hartumann,
"Oxidation of Suspended Stacked Silicon Nanowire for Sub-10nm Cross-Section Shape Optimization," ECS Transactions, vol. 13, pp. 195-199, 2008.
[27] J. Pelleg, and A. Douhin, "Evaluation of Schottky barrier height of TiN/p-type Si (100)," J. Vac. Sci. Technol., vol. 22, no. 5, pp. 1980-1983, 2004.
[28] S. M. Sze, "Physics of semiconductor devices," Wiley-Interscience, 3nd Edition, pp. 134-373, 2007.
[29] D. A. Neamen, "Semiconductor physics & devices," Mc-Graw-Hill, 3nd Edition, pp. 375-415, 2003.
[30] D. J. Coe, and E. H. Rhoderick, "Silicide formation in Ni-Si Schottky barrier diodes," J. Phys. D: Appl. Phys., vol. 9, 1976.
[31] W. Chang, "Improvement of Thermal Stability for Nickel Silicide formed on Poly-Si0.82Ge0.18," Graduate Institute of Electronic Engineering Master's Thesis, pp. 135, 2005.
[32] J. Appenzeller, J. Knoch, E. Tutuc, M. Reuter, and S. Guha, " Dual-gate silicon nanowire transistors with nickel silicide contacts," INTERNATIONAL ELECTRON DEVICES MEETING, vol. 1, pp. 302-305, 2006.
[33] V. Teodorescu, L. Nistor, H. Bender, A. Steegen, A. Lauwers, K. Maex, and J.
Van Landuyt, "In situ transmission electron microscopy study of Ni silicide phases formed on .001. Si active lines," J. Appl. Phys, vol. 90, no. 1, pp.167-175, 2001.
[34] D. Smeets, A. Vantomme, K. D. Keyser, C. Detavernier, and C. Lavoie, "The role of lattice mismatch and kinetics in texture development: Co1−xNixSi2 thin films on Si(100)," J. Appl. Phys, vol. 103, pp. 063506-063517, 2008.
[35] D. K. Schroder, "Semiconductor material and device characterization," A Wiley-Interscience Publication, pp. 163-365, 1998.
[36] N. Biswas, J. Gurganus, and V. Misraa, "Work function tuning of nickel silicide by co-sputtering nickel and silicon, " Appl. Phys. Lett., vol. 87, no. 17, pp.
171908-171910, 2005.
.