良好附著在基板上。表示在 100℃時，濺鍍出之氮化銦薄膜，雖然有
銦薄膜，再降溫至低溫沉積氮化銦。先以高溫沉積取得較佳之附著 性，再變溫至低溫取得較高的電子移動率。若加入緩衝層，或許亦能 改善其複雜的晶相且提高低溫沉積之附著性。
第二點中，目前濺鍍之氮化銦薄膜均有類似的問題，載子濃度均 偏高，如何去降低其載子濃度，有待後進相關人員深入探討研究。
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附錄一
基板表面殘留稀鹽酸。
(6) 以氮氣槍將表面吹乾，並置入烤箱中以 90℃，烤乾 3 分鐘。
附錄二
一. 氮化鋁詳細的濺鍍步驟
(1) 將清洗好的基板，置入濺鍍系統中的樣品載台轉盤。
(2) 將腔體真空度以機械幫浦（mechanical pump）抽至 1×10-3torr 以下。
(3) 以渦輪分子幫浦（turbo pump）將腔體抽至 2.1×10-6torr 以下。
(4) 以加熱燈管將腔體加熱至 400℃，並將樣品載台轉盤轉動，持續 60 分鐘。
(5) 在穩定維持 400℃的腔體中，通入 6 sccm 的氮氣（N2），持續 60 分鐘。
(6) 於裝有鋁鈀的 GUNAl，以 50W 直流濺鍍氮化鋁 5 分鐘，此步驟為預 打，不沉積於基板上。
(7) 步驟(6)結束後隨即以 50W 直流濺鍍氮化鋁 15 分鐘，沉積於基板 上。
(8) 材料沉積完成之後，將加熱燈管關閉，但氮氣繼續通入，直到腔 體溫度降至室溫。
二. 氮化銦詳細的濺鍍步驟
(1) 將清洗好的基板，置入濺鍍系統中的樣品載台轉盤。
(2) 將腔體真空度以機械幫浦抽至 1×10-3torr 以下。
(3) 以渦輪分子幫浦將腔體抽至 2.1×10-6torr 以下。
(4) 以加熱燈管將腔體加熱至 400℃，並將樣品載台轉盤轉動，持續 60 分鐘。
(5) 將溫度設定為材料欲成長的溫度 T℃，通入 F sccm 的氮氣，持續 60 分鐘。（T、F 均為實驗中所控制的參數。）
(6) 於裝有銦鈀的 GUNIn，以 25W 直流濺鍍氮化銦 10 分鐘，此步驟為 預打，不沉積於基板上。
(7) 步驟(6)結束後隨即以 25W 直流濺鍍氮化銦 15 分鐘，沉積於基板 上。
(8) 材料沉積完成之後，將加熱燈管關閉，但氮氣繼續通入，直到腔 體溫度降至室溫。