1.在紅光發光二及體中，利用 SiC 取代傳統 GaAs 基板可以提升飽和 電流 4 倍左右。
2.在使用 Wafer Bonding 將 AlGaInP 磊晶層轉移到 SiC 基板之元件配 合 BeAu mirror LED 與 CV-LED(傳統 LED)發光強度提升 76%，BeAu -Roughening LED 可提升發光強度 80%，BeAu-Roughening-TiPtAu LED 可提升發光強度 81%，Ag-Roughening-TiPtAu LED 可提升發光強度 82%。
3.使用 Diffusion Barrier layer 確實可以阻擋 In 之擴散。
4.使用 RTA 退火確實有比在空氣中使用爐管退火更有效避免 Ag 的氧 化。
5.Ni 形成 NiO 可以防止 Ag 氧化並且提升在 470nm 之反射率。並且在 Sapphire 基板成長 u-GaN 並沉積 mirror，在 470nm 仍然有 90%以上 反射率。
5-2 未來之工作
未來希望能將 Ni/Ag 此系列配合晶圓接合技術製作高亮度與高 功率之藍光發光二極體，並且嘗試使用 SiC 與鑽石(Diamond
)基板製作發光二極體。因為 SiC 之熱傳導係數為 490W/mK，而鑽石 基板之熱傳導係數約為 1000~2000W/mK(視長晶品質而定) 。利用高 熱傳導係數之基板一定可以製作出 High Power & High Brightness 之發光二極體。
在尋找相關之 Barrier 能夠取代 Ni 之材料並應用於鏡面反射層 與 P-type 之 Ohmic contact，並將 Mirror 提升至 UV 光波段可以達 到 90%以上之反射率。
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