在第四章裡，我們 鎵硒合金靶材時的基
板溫
得 做了一些實驗與分析，包括濺鍍銅銦
度及氬氣流量對CIGS 薄膜的影響，以及事後硒處理溫度對 CIGS 薄膜的影 響。而在空氣、真空、FG 氣氛下的熱處理也是對 CIGS 薄膜的電洞遷移率、濃 度有不同的變化。其中在低溫的空氣熱處理中少量的氧原子可以填補硒空缺 (Vse)、造成 CIGS 薄膜的電洞移動率上升。而大量的氧原子填入 CIGS 薄膜使 濃度上升，電洞遷移率下降。而在低溫的FG 氣氛熱處理環境，則會降低其電洞 移動率、濃度及增加電阻率。而我們並且反覆在低溫熱氧化以及低溫熱處理的 FG 氣體中，去觀察空氣熱處理以及 FG 氣體對 CIGS 薄膜的互相影響。本研究並 將p 型 CIGS 薄膜製作於 n 型矽基板上。
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