4.1 電漿製程對ＭＯＨＯＳ電容儲存層之研究
經過 H2與NH3電漿處理之後，有大量的fixed positive charge 可 以被創造讓 C-V 遲滯曲線落在負平帶電壓的範圍。在電荷保持力的 量測部分，H2電漿處理會同時創造淺的陷阱與深的陷阱，而淺的捕捉 電子陷阱初始會讓已經儲存的電子容易的流失掉，然後才逐漸穩定下 來。NH3電漿處理，電荷保持比較穩定。由於多數淺的陷阱已經被N 原子修補掉，只儀留下大量較深的陷阱，故只呈現緩慢的電子流失速 度。實驗結果指出在 H2與 NH3電漿處理，經過103秒後仍有(2 伏 ~ 3 伏)的記憶視窗被獲得。
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