論文總整理

第六章結論

6.2 論文總整理

 本論文將優化電極相關之各種功率消耗進行理論推演，並在製程可行之相同覆蓋率、電極間距下進行分析比較。其理論推演比較結果如下:

※金屬電極功率消耗: Normal > Step width > Taper > SW&Taper 圖 3-10 表面橫向電阻功率消耗: 與優化樣式無關，與電極間距有關

接觸電阻功率消耗: SW&Taper & Step width > Normal & Taper 圖 3-15

 利用數值模擬分析各種優化電極之電流密度與功率消耗密度分佈，並將其積分求得電極之功率消耗與理論推演值符合。其數值模擬比較結果如下:

電流密度分佈均勻度: SW&Taper > Taper > Step width > Normal 圖 3-20 功率消耗密度分佈均勻度: SW&Taper > Taper > Step width > Normal

金屬電極功率消耗 Normal > Step width > Taper > SW&Taper 圖 3-25

 接著設計光罩將元件實際製出，並且導入電極保護與單元隔離製程。

實驗量測結果之比較如下:

蝕刻元件表面 GaAs (照光區) V_oc↑ J_sc↑ 圖 5-1

電池單元隔離 (SiO₂) Voc↑ 圖 5-3

閘狀電極(Grid)保護 (SiO2) Jsc↑ 圖 5-2 元件大小(Normal) Size↑ J_sc↓ V_oc↑ 圖 5-4 串聯電阻(116x Suns) Normal > Step width > SW&Taper > Taper

圖 5-6

圖 5-7 FF(1x Sun) SW&Taper > Step width > Normal > Taper

FF (116x Suns) SW&Taper > Taper > Step width > Normal 轉換效率(1x Sun) SW&Taper > Step width > Taper > Normal 轉換效率(116x Suns) SW&Taper > Taper > Step width > Normal

參考文獻

[1] C. Baur, A. W. Bett, F. Dimroth, G. Siefer, M. Meusel, W. Bensch, W. Kostler, G.

Strobl, “Triple-Junction III-V Based Concentrator Solar Cells :Perspectives and Challengess”, Jounal of Solar Energy Engineering, Vol. 129, 2007

[2] H. B. Serreze, “Optimizing Solar Cell Performance Simultaneous Consideration of Grid Pattern Design Interconnect Configuration”, 13^th IEEE Photovoltaic Specialists Conference, 1978.

[3] A. R. Moore, “An Optimized Grid Design a Sun-Concentrator Solar Cell”, RCA Review, Vol.40, 1979.

[4] S. Okamodo, M. Nishida, T. Shindo, Y. Komatsu, S. Yasue, M. Kaneiwa and T.

Nanmori, “23.5% Efficent Silicon Solar Cell with Rear Micro Contacts of c-Si/pc-Si:H Heterostructure”, 26^th IEEE Photovoltaic Specialists Conference, 1997.

[5] C. Algora, S. Member, E. Ortiz, I. R. Stolle, V. Díaz, R. Peña, V. M. Andreev, V. P.

Khvostikov, and V. D. Rumyantsev, “A GaAs Solar Cell with an Efficiency of 26.2% at 1000 Suns and 25.0% at 2000 Suns”,Transactions on Electron Devices, Vol.48, 2001

[6] G.M.M.W. Bissels*, M.A.H. Asselbergs, J.J. Schermer, E.J. Haverkamp, N.J.

Smeenk and E. Vlieg, “A Genuine Circular Contact Grid Pattern for Solar Cells”, Progress in Photovoltaics: Research and Applications, Vol.18, 517–526, 2011.

[7] C. Honsberg and S. Bowden, “Photovoltaics CDROM”,1992 (http://pvcdrom.pveducation.org/APPEND/AM1_5.HTM.)

[8] 盧廷昌，王興宗， ”半導體雷射導論”，五南圖書出版公司，2008。

[9] K. Nishioka, T. Takamoto, T. Agui, M. Kaneiwa, Y. Uraoka, T. Fuyuki,

“Evaluation of InGaP/InGaAs/Ge triple-junction solar cell and optimization of

solar cell’s structure focusing on series resistance for high-efficiency concentrator photovoltaic systems”

[10] 曾才榮， “太陽電池技術專利的分析與探究”，國立政治大學科技管理研究所碩士論文，2007。

[11] 莊嘉琛， “太陽能工程-太陽電池篇”，全華圖書公司，2008。

[12] V. Garboushian, K.W. Stone, A. Slade, “The Amonix High-Concentration Photovoltaic System”, Concentrator Photovoltaics,Vol.130, 253-277, 2007

[13] 林苡任， “菲涅爾透鏡(Fresnel lens)之光學設計與精密成形”，國立高雄科技大學模具工程系碩士論文，2009。

[14] J. C. Zolper, R. P. Schneider, J. A. Lott, “Formation of High Resistivity Regions in P-type Al0.5In0.5P by Ion Implantation”, Appl. Phys. Lett.,Vol.63, 3161-3163, 1993.

[15] 吳健銘， “高聚光型 In_0.49Ga_0.51P/GaAs/In_0.3Ga_0.7As 三接面太陽能電池結構與電極之光電特性模擬與分析”，國立彰化師範大學光電科技研究所碩士論文，

2009。

[16] Y. Lijie LI. Fuxiao J. Youquan C. Xinyu, “Formation of Ohmic Contacts to P—GaAs”, Research & Progress of SSE, Vol.27, 427-430, 2007.

[17] K. Nishioka, T. TAKAMOTO, T. Agui, M. Kaneiwa, Y. Uraoka, T. Fuyuki,

“Evaluation of InGaP/InGaAs/Ge Triple-Junction Solar Cell under Concentrated Light by Simulation Program with Integrated Circuit Emphasis”, Japanese Journal of Applied Physics ,Vol.43, 882-889, 2004

附錄(A)

MathCad 計算流程 1.定義參數:

2.確認圖形參數相對應之附蓋率

3.計算 SW 之第一線寬

4.計算功率消耗(

電極電阻功耗、表面橫向電阻功耗、接觸電阻功耗…

)

例:電極電阻功耗

附錄(B)

Comsol 模擬

定義 2D 圖形

匯入 Dxf 檔後以線描出平面

拉伸成 3D 圖形(繪圖拉伸)

利用 z 方向平移將圖塊接合(半導體厚度 t 則先將電極圖形往 z 方向移動 t，再拉伸半導體圖形)

選擇物理量模組(多重物理量模型導覽視窗傳導介質 DC)

定義材料及初始值(物理量統御域設定)

設定邊界條件(物理量邊界設定)

Bus 部分設定為接地，半導體下方面設為向內電流源，其於設定為接地

網格化(網格初始化網格)

進行模擬(求解進行求解) 顯示解分佈(後處理繪圖參數)

切線取值(後處理剖面圖參數)

附錄(C)

5SPICE 模擬

等效二極體參數

InGaP InGaAs Ge

Eg(eV) 1.82 1.4 0.65

Is(A) 1.4×10^-26 5.5×10^-18 8.5×10^-6

Rs 0 0 0

Xti 3 3 3

column column_num=1 w=100. mesh_num=5 r=0.9 column_position label=x1 location=left

column_position label=x2 location=right

column column_num=2 w=1000. mesh_num=15 r=-1.1 column column_num=3 w=100. mesh_num=5 r=0.9 column_position label=x3 location=left

column_position label=x4 location=right

bottom_contact column_num=1 from=0 to=100. contact_num=1 contact_type=ohmic bottom_contact column_num=2 from=0 to=1000. contact_num=1 contact_type=ohmic bottom_contact column_num=3 from=0 to=100. contact_num=1 contact_type=ohmic

$$ Start of bottom InGaAs junction

layer_mater macro_name=au column_num=1 layer_mater macro_name=au column_num=2 layer_mater macro_name=au column_num=3 layer d=0.1 n=30 r=0.9

$layer_position label=y1 delta_y_from_top=0.03

$ make a thin layer with dense mesh to define a potential barrier

$ The tunneling model needs it.

$ Please note that tunneling range is usually within a couple of hundred A.

layer_mater macro_name=gaas column_num=1 p_doping=8.e+18 layer_mater macro_name=gaas column_num=2 p_doping=8.e+18 layer_mater macro_name=gaas column_num=3 p_doping=8.e+18

layer d=100. n=15 r=-1.1

layer_position label=y1 delta_y_from_top=0.03

layer_mater macro_name=ingaas column_num=1 var_symbol1=x var1=0.3 &&

p_doping=7.e+25

layer_mater macro_name=ingaas column_num=2 var_symbol1=x var1=0.3 &&

p_doping=7.e+25

layer_mater macro_name=ingaas column_num=3 var_symbol1=x var1=0.3 &&

p_doping=7.e+25

layer d=0.05 n=5 r=1.3

layer_position label=y2 delta_y_from_bottom=0.02

layer_mater macro_name=ingaas column_num=1 var_symbol1=x var1=0.3 &&

p_doping=1.e+23

layer_mater macro_name=ingaas column_num=2 var_symbol1=x var1=0.3 &&

p_doping=1.e+23

layer_mater macro_name=ingaas column_num=3 var_symbol1=x var1=0.3 &&

p_doping=1.e+23

layer d=2.9 n=15 r=0.9

layer_mater macro_name=ingaas column_num=1 var_symbol1=x var1=0.3 &&

n_doping=2.e+24

layer_mater macro_name=ingaas column_num=2 var_symbol1=x var1=0.3 &&

n_doping=2.e+24

layer_mater macro_name=ingaas column_num=3 var_symbol1=x var1=0.3 &&

n_doping=2.e+24

layer d=0.1 n=15 r=0.8

layer_mater macro_name=ingap column_num=1 var_symbol1=x var1=0.3 &&

n_doping=2.e+24

layer_mater macro_name=ingap column_num=2 var_symbol1=x var1=0.3 &&

n_doping=2.e+24

layer_mater macro_name=ingap column_num=3 var_symbol1=x var1=0.3 &&

n_doping=2.e+24

layer d=0.05 n=10 r=1.

$ End of bottom InGaAs junction

$ Transparent GaxIn1-xP grading layer

layer_mater macro_name=ingap column_num=1 var_symbol1=x grade_var=1 &&

grade_from=0.22 grade_to=0.51 n_doping=1.e+23

layer_mater macro_name=ingap column_num=2 var_symbol1=x grade_var=1 &&

grade_from=0.22 grade_to=0.51 n_doping=1.e+23

layer_mater macro_name=ingap column_num=3 var_symbol1=x grade_var=1 &&

grade_from=0.22 grade_to=0.51 n_doping=1.e+23 layer d=2. n=15 r=-1.1

$---Start of tunnel junction 1---

layer_mater macro_name=algaas column_num=1 var_symbol1=x var1=0.01 &&

n_doping=2.e+25

layer_mater macro_name=algaas column_num=2 var_symbol1=x var1=0.01 &&

n_doping=2.e+25

layer_mater macro_name=algaas column_num=3 var_symbol1=x var1=0.01 &&

n_doping=2.e+25 layer d=0.01 n=5 r=1.

layer_mater macro_name=algaas column_num=1 var_symbol1=x var1=0.3 &&

p_doping=5.e+25

layer_mater macro_name=algaas column_num=2 var_symbol1=x var1=0.3 &&

p_doping=5.e+25

layer_mater macro_name=algaas column_num=3 var_symbol1=x var1=0.3 &&

p_doping=5.e+25 layer d=0.01 n=5 r=1.

$---End of tunnel junction 1---

$ Start of middle GaAs cell

layer_mater macro_name=ingap column_num=1 var_symbol1=x var1=0.51 &&

p_doping=2.e+24

layer_mater macro_name=ingap column_num=2 var_symbol1=x var1=0.51 &&

p_doping=2.e+24

layer_mater macro_name=ingap column_num=3 var_symbol1=x var1=0.51 &&

p_doping=2.e+24

layer d=0.07 n=6 r=0.9

$---

layer_mater macro_name=gaas column_num=1 p_doping=1.5e+23 layer_mater macro_name=gaas column_num=2 p_doping=1.5e+23 layer_mater macro_name=gaas column_num=3 p_doping=1.5e+23 layer d=1.9 n=15 r=-1.1

$$---

layer_mater macro_name=gaas column_num=1 n_doping=2.e+24 layer_mater macro_name=gaas column_num=2 n_doping=2.e+24 layer_mater macro_name=gaas column_num=3 n_doping=2.e+24 layer d=0.1 n=11 r=1.1

layer_mater macro_name=ingap column_num=1 var_symbol1=x var1=0.51 &&

n_doping=2.e+24

layer_mater macro_name=ingap column_num=2 var_symbol1=x var1=0.51 &&

n_doping=2.e+24

layer_mater macro_name=ingap column_num=3 var_symbol1=x var1=0.51 &&

n_doping=2.e+24 layer d=0.05 n=7 r=1.

$ End of middle GaAs cell

$---Start of tunnel junction 2---

layer_mater macro_name=algaas column_num=1 var_symbol1=x var1=0.01 &&

n_doping=2.e+25

layer_mater macro_name=algaas column_num=2 var_symbol1=x var1=0.01 &&

n_doping=2.e+25

layer_mater macro_name=algaas column_num=3 var_symbol1=x var1=0.01 &&

n_doping=2.e+25 layer d=0.01 n=5 r=1.

layer_mater macro_name=algaas column_num=1 var_symbol1=x var1=0.3 &&

p_doping=5.e+25

layer_mater macro_name=algaas column_num=2 var_symbol1=x var1=0.3 &&

p_doping=5.e+25

layer_mater macro_name=algaas column_num=3 var_symbol1=x var1=0.3 &&

p_doping=5.e+25 layer d=0.01 n=5 r=1.

$---End of tunnel junction 2---

$ Start of top InGaP cell

layer_mater macro_name=ingaalp_xyt column_num=1 var_symbol1=x var1=0.25 &&

var_symbol2=y var2=0.25 p_doping=2.e+24

layer_mater macro_name=ingaalp_xyt column_num=2 var_symbol1=x var1=0.25 &&

var_symbol2=y var2=0.25 p_doping=2.e+24

layer_mater macro_name=ingaalp_xyt column_num=3 var_symbol1=x var1=0.25 &&

var_symbol2=y var2=0.25 p_doping=2.e+24

$問題可能是在這 data 檔中沒有 ingaalp_xyt layer d=0.05 n=7 r=1.

layer_mater macro_name=ingap column_num=1 var_symbol1=x var1=0.51 &&

p_doping=1.5e+23

layer_mater macro_name=ingap column_num=2 var_symbol1=x var1=0.51 &&

p_doping=1.5e+23

layer_mater macro_name=ingap column_num=3 var_symbol1=x var1=0.51 &&

p_doping=1.5e+23 layer d=0.39 n=9 r=-1.2

$$---

layer_mater macro_name=ingap column_num=1 var_symbol1=x var1=0.51 &&

n_doping=2.e+24

layer_mater macro_name=ingap column_num=2 var_symbol1=x var1=0.51 &&

n_doping=2.e+24

layer_mater macro_name=ingap column_num=3 var_symbol1=x var1=0.51 &&

n_doping=2.e+24 layer d=0.1 n=9 r=1.

layer_mater macro_name=ingaalp_xyt column_num=1 var_symbol1=x var1=0 &&

var_symbol2=y var2=0.5 n_doping=1.95e+24

layer_mater macro_name=ingaalp_xyt column_num=2 var_symbol1=x var1=0 &&

var_symbol2=y var2=0.5 n_doping=1.95e+24

layer_mater macro_name=ingaalp_xyt column_num=3 var_symbol1=x var1=0 &&

var_symbol2=y var2=0.5 n_doping=1.95e+24 layer d=0.02 n=5 r=1.

$ make a thin layer with dense mesh. The tunneling model needs it.

$ Please note that tunneling range is usually within a couple of hundred A.

layer_mater macro_name=ingaalp_xyt column_num=1 var_symbol1=x var1=0 &&

var_symbol2=y var2=0 n_doping=7.e+25

layer_mater macro_name=ingaalp_xyt column_num=2 var_symbol1=x var1=0 &&

var_symbol2=y var2=0 n_doping=7.e+25

layer_mater macro_name=ingaalp_xyt column_num=3 var_symbol1=x var1=0 &&

var_symbol2=y var2=0 n_doping=7.e+25 layer d=0.05 n=5 r=0.7

layer_position label=y3 delta_y_from_top=0.05

layer_mater macro_name=au column_num=1 layer_mater macro_name=void column_num=2 layer_mater macro_name=au column_num=3 layer d=0.1 n=15 r=-1.2

layer_position label=y4 delta_y_from_bottom=0.01

$ End of top InGaP cell

internal_xpoint all_interfaces=yes xp_size=0.001

top_contact column_num=1 from=0. to=100. contact_num=2 contact_type=ohmic top_contact column_num=3 from=0 to=100. contact_num=2 contact_type=ohmic

end_layer

Sol 檔

$file:solar.sol begin

$use_macrofile macro1=au.mac load_mesh mesh_inf=solar.msh include file=solar.mater

include file=solar.doping output sol_outf=solar.out

temperature temp=303

(溫度 K)

band_gap value=1.02 mater=3 band_gap value=1.86 mater=8

$ adjust metal work_function （named affinity in macro） like this:

affinity value=5.1 mater=1

$ Use hole tunneling for p-contact.

$Using triangle barrier model is also a good choice.

tunneling carrier=hole barrier_type=propagation_matrix &&

y1_label=y1 y2_label=y2

$ Use electron tunneling for n-contact.

tunneling carrier=electron barrier_type=propagation_matrix &&

x1_label=x1 x2_label=x2 y1_label=y3 y2_label=y4

tunneling carrier=electron barrier_type=propagation_matrix &&

x1_label=x3 x2_label=x4 y1_label=y3 y2_label=y4

$lifetimes our best guess from checking

$ various references

$In0.3Ga0.7As

lifetime_n value=0.03e-7 mater=3 lifetime_p value=0.03e-7 mater=3

$InGaP

lifetime_n value=2e-8 mater=8 lifetime_p value=2e-8 mater=8

$GaAs

lifetime_n value=1.e-7 mater=2 lifetime_p value=1.e-7 mater=2

$ Surface & interface recombinations

$interface model = recomb velocity_p = 1.5e3 &&

$ velocity_n=1.5e3 y = 7.86

$interface model = recomb velocity_p = 1.5e3 &&

$ velocity_n=1.5e3 y = 8.86

$ TJ

tunnel_junc yrange=(105.20 105.22) tunnel_junc yrange=(107.34 107.36)

$這邊論文是寫 equiv_tunnel_junction

$End TJ

newton_par damping_step=5. var_tol=1.e-9 res_tol=1.e-9 &&

max_iter=100 opt_iter=15 stop_iter=50 print_flag=3

$ Solve for equilibrium condition.

equilibrium

$output1

newton_par damping_step=9. var_tol=1.e-1 res_tol=1.e-1 &&

max_iter=90 opt_iter=45 stop_iter=40 print_flag=3 &&

change_variable=no

scan var=light value_to=1 print_step=1 &&

init_step=1.e-2 min_step=1.e-5 max_step=0.1

$output2

$ Apply a forward bias to offset the photo current

newton_par damping_step=3. var_tol=1.e-2 res_tol=1.e-2 &&

max_iter=40 opt_iter=25 stop_iter=25 print_flag=3 &&

change_variable=no

scan var=voltage_1 value_to=3.5 print_step=3.5 &&

init_step=0.001 min_step=1.e-5 max_step=0.02

$output3

$ use current scan only when it is necessary and convergence

$ is hard to achieve.

$scan var=current_1 value_to=0 print_step=2.5 &&

$init_step=1e-5 min_step=1.e-7 max_step=1e-2

$output4

$ photo-sensitive device:

$front_ar_coating power_transmission=0.99

light_power spectrum_file = solar.am15g light_dir = top &&

profile=[0 6850 0.01 0.01]

$zero_intern_refl = no

optic_coating spectrum_file=index_MgF2.dat thickness=0.1 layer_num=1 optic_coating spectrum_file=index_ZnS.dat thickness=0.05 layer_num=2

$optic_coating spectrum_file=solar.sio2 thickness=0.05 index_spectrum spectrum_file=index_ag.dat mater=1

$index_spectrum spectrum_file=index_au.dat mater=1

index_spectrum spectrum_file=index_In30Ga70As.dat mater=3 index_spectrum spectrum_file=index_InGaP.dat mater=8 index_spectrum spectrum_file=index_GaAs.dat mater=2 back_reflection power_transmission=1.0

$real_refl=0. imag_refl=0.

end

在文檔中高聚光太陽能電池新樣式優化電極之研製 (頁 87-0)

第六章 結論

6.2 論文總整理

參考文獻

附錄(A)

MathCad 計算流程 1.定義參數:

2.確認圖形參數相對應之附蓋率

3.計算 SW 之第一線寬

4.計算功率消耗(

)

例:電極電阻功耗

附錄(B)

Comsol 模擬

附錄(C)

5SPICE 模擬

Sol 檔

temperature temp=303

第六章結論