鋇鍶鈦薄膜在高溫時之熱輻射性質的實驗研究

第四章結果與討論

4.2 實驗結果

4.2.3 鋇鍶鈦薄膜在高溫時之熱輻射性質的實驗研究

圖 4-35 和圖 4-36 分別顯示在近、中紅外光區段在矽基材上鍍上不同厚度之鋇鍶鈦薄膜的穿透率及反射率。可以發現當增加薄膜厚度時穿透率會增加而反射率可以清楚的看到會有震盪的現象產生。圖 4-37 和圖 4-38 分別顯示在可見光區段在矽基材上鍍上不同厚度之鋇鍶鈦薄膜的折射參數及吸收係數。當鋇鍶鈦薄膜的厚度為 0.4µm 時，可以發現會有最高的

折射參數及吸收係數。在近、中紅外光區段鋇鍶鈦薄膜的吸收係數都會趨近於零且折射參數的最高值會出現在可見光區段。因此若我們要用鋇鍶鈦薄膜進行快速熱製程時，鋇鍶鈦薄膜厚度的選擇最好是為 0.4µm。

圖 4-39 顯示在近、中紅外光區段在矽基材上鍍上鋇鍶鈦薄膜時在不同的加熱溫度下之反射率。由結果可知從加熱溫度從 30℃到 600℃時，其反射率的差異不大但有往較短波長移動的趨勢。當加熱溫度高於 600℃時，因為薄膜的結晶結構已經改變，所以趨勢會跑掉且會往較長波長的方向移動。

0 5 10 15 20

Time (sec)

0 200 400 600 800 1000 1200

W afer Center Temperature (

C )

0 20 40 60 80 100 120 140 160

Tem p erature Ram p -u p Rat e (

C/s ec )

圖 4-1 在過程中晶圓中心的溫度及溫昇率

圖 4-2 快速熱製程中矽晶片溫度之差異

0 5 10 15 20 Time (sec)

1.0 1.2 1.4 1.6 1.8 2.0

Ve rt ic al E d ge -H eat- Com p en sa ti on -Scal in g Fa ct or

100 mm 150 mm 200 mm 300 mm

(a)

0 5 10 15 20

Time (sec) 0.0

0.2 0.4 0.6 0.8 1.0

La tera l Ed ge -H eat -C om pe ns at io n- Sca ling Fa ct or

100 mm 150 mm 200 mm 300 mm

(b)

圖 4-3 應用逆向模式得到之矽晶圓的(a)垂直和(b)側邊的邊緣熱補償係數

(b) Laterally Edge Heating Compensation (a) Vertically Edge Heating Compensation

圖 4-4 應用逆向模式矽晶片計算矽晶圓中心之控制溫度均勻性的 (a)垂直和(b)側邊的邊緣熱補償之三維溫度差異圖

0 5 10 15 20

Time (sec)

0.0 0.2 0.4 0.6 0.8 1.0

T edge -T center ( o C )

4-inch 6-inch 8-inch 12-inch

Vertically Laterally

100 mm 150 mm 200 mm 300 mm

Lateral Vertical

圖 4-5 應用逆向模式獲得垂直與側邊的熱補償，直徑為 100、150、200、300mm 的晶圓邊緣和中心之間的溫度差異圖

0 5 10 15 20

Time (sec)

0 200 400 600 800 1000 1200

Wafer Center Temperature (

C )

Desired Temperature Inverse Result with

σ

^{= 0.0} Inverse Result with

σ

= 0.001 Inverse Result with

σ

= 0.005

(a)

0 5 10 15 20

Time (sec)

-50 0 50 100 150 200 250

Temp erature Ramp-u p Rate (

C/sec )

Desired Temperature Inverse Result with

σ

= 0.0 Inverse Result with

σ

= 0.001 Inverse Result with

σ

= 0.005

(b)

圖 4-6 量測誤差為

σ

=0.0，

σ

=0.001 和

σ

=0.005 時之晶圓(a) 溫度軌跡(b)溫昇率

圖 4-7 應用逆向模式計算，量測誤差

σ

=0.0 的入射熱通量曲線

0 5 10 15

Radial Position (cm)

18 20 22 24 26

Inc id ent He at Flu x ( W/ cm

)

Inverse Result with σ = 0.0 at Time = 5 sec at Time = 10 sec at Time = 15 sec at Time = 20 sec

(a)

0 5 10 15

Radial Position (cm)

18 20 22 24 26 28

In ci de n t H ea t Fl ux ( W/ cm

)

Inverse Result with σ = 0.001 at Time = 5 sec at Time = 10 sec at Time = 15 sec at Time = 20 sec

(b)

0 5 10 15

Radial Position (cm)

16 20 24 28 32

Inci d ent H eat Flux ( W/c m

)

Inverse Result with σ = 0.005 at Time = 5 sec at Time = 10 sec at Time = 15 sec at Time = 20 sec

(c)

圖 4-8 藉由逆向方法計算在量測誤差分別為(a)

σ

=0.0 (b)

σ

=0.001 (c)

σ

=0.005 之入射熱通量曲線

(a)

(b)

圖 4-9 應用逆向模式計算(a)晶片的溫度分佈(b)當量測誤差為

σ

=0.0 時之熱不均勻分佈

0 5 10 15

Radial Position (cm)

-0.04 0.00 0.04 0.08 0.12

Tem p erature Difference (

C )

(a)

Inverse Result with σ = 0.0 Desired Temperature Difference at Time = 5 sec

at Time = 10 sec at Time = 15 sec at Time = 20 sec

0 5 10 15

Radial Position (cm)

-0.04 0.00 0.04 0.08 0.12 0.16

T emperature Difference (

C )

(b)

Inverse Result with σ = 0.001 Desired Temperature Difference at Time = 5 sec

at Time = 10 sec at Time = 15 sec at Time = 20 sec

0 5 10 15

Radial Position (cm)

-0.1 0.0 0.1 0.2 0.3

Te mpe ra tu re Di ffer en ce (

C )

(c)

Inverse Result with σ = 0.005 Desired Temperature Difference at Time = 5 sec

at Time = 10 sec at Time = 15 sec at Time = 20 sec

圖 4-10 量測誤差分別為(a)

σ

=0.0 (b)

σ

=0.001 (c)

σ

=0.005 其晶片上的位置和晶片中心之間的溫度差異

0 5 10 15 20

Time (sec)

-0.2 -0.1 0.0 0.1 0.2 0.3

T edge -T ce nte r ( o C )

Desired Temperature Difference I nverse Result with σ = 0.0 I nverse Result with σ = 0.001 I nverse Result with σ = 0.005

12-inch Wafer

圖 4-11 應用逆向方法，在量測誤差為

σ

=0.0,

σ

=0.001 和

σ

=0.005 時，晶片上的邊緣和晶片中心之間的溫度差異

2 4 6 8 10 12 14 16

Wafer Diameter ( inch )

0.0 0.2 0.4 0.6 0.8 1.0

Maximum | ∆ T | (

C )

Measurements Errors

σ = 0.0 σ = 0.001 σ = 0.003 σ = 0.005

圖 4-12 利用逆向方法計算，量測誤差為

σ

=0.0、

σ

=0.001、

σ

=0.003 和

σ

=0.0005 時，在 4 吋、6 吋、8 吋和 12 吋時最大的溫度差異

(a)

(b)

(c)

圖 4-13 應用逆向模式，量測誤差為

σ

=0.0，溫昇率為(a)100^oC/sec (b)200^oC/sec (c)300^oC/sec 的入射熱通量曲線

(a)

(b)

(c)

圖 4-14 應用逆向模式，量測誤差為

σ

=0.0，溫昇率為(a)100^oC/sec (b)200^oC/sec (c)300^oC/sec 的入射熱通量之熱非均勻性曲線

100 150 200 250 300

Linear Ramp-up Rate ( ^o C/sec )

0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6

Ma xim u m | ∆ T | ( o C )

σ = 0.0 σ = 0.001 σ = 0.003 σ = 0.005

圖 4-15 應用逆向模式，量測誤差為

σ

=0.0、0.001、0.003 和 0.005，温昇率與最大溫度差異圖

0 4 8 12 16 20

Wavelength( µ m)

-4 0 4 8 12 16 20

R esp o n se

^1300K_1200K

1100K

0 4 8 12 16 20

Wavelength( µ m)

-4 0 4 8 12 16 20

R esp o n se

^1300K

1200K 1100K

0 4 8 12 16 20

Wavelength( µ m)

0E+0 1E+5 2E+5 3E+5 4E+5

B lac kbody e m is si ve pow er (W m

-2

µ m )

1300K 1200K

1100K

圖 4-16 加熱溫度為 1100K、1200K 及 1300K 之黑體輻射頻譜(a)在無填充氣體(b)有填充氣體(c)理論計算之值

2 4 6 8 10 12 14 16 18

Wavelength(

m)

0E+0 5E+4 1E+5 2E+5 2E+5

Inst rument Response Funct ion( W m -2 µ m )

圖 4-17 實驗量測設備的反應函數(IRF)

0 4 8 12 16 20

Wavelength( µ m)

-4 0 4 8 12 16

R esp o n se

70 Volt 50 Volt 30 Volt

0 4 8 12 16 20

Wavelength( µ m)

-4 0 4 8 12 16

R esp o n se

^{70 Volt}

50 Volt 30 Volt

0 4 8 12 16 20

Wavelength( µ m)

-4 0 4 8 12 16

Re sp o n se

70 Volt 50 Volt

30 Volt

圖 4-18 No. 64573 石英鎢鹵素燈之輻射頻譜比較(a)整個燈源量測(b)切斷電源(c)二者相減的結果

(a)

(b)

(c)

0 4 8 12 16 20

Wavelength( µ m)

-4 0 4 8 12 16

R esp o n se ^{70 Volt}

50 Volt 30 Volt

0 4 8 12 16 20

Wavelength( µ m)

-4 0 4 8 12 16

R esp o n se ^{70 Volt}

50 Volt 30 Volt

0 4 8 12 16 20

Wavelength( µ m)

-4 0 4 8 12 16

R esp o n se

70 Volt 50 Volt 30 Volt

圖 4-19 No. 64743 石英鎢鹵素燈之輻射頻譜比較(a)整個燈源量測(b)切斷電源(c)二者相減的結果

(a)

(b)

(c)

0 2 4 6 8 10 12 14 16 18 20

Wavelength (

m )

0 20 40 60 80 100

Tr ansm it tance (% )

BST on Fused-Quartz

substrate df = 0.0999 ( µm ) df = 0.2939 ( µm ) df = 0.4110 ( µm ) df = 0.5109 ( µm ) df = 0.7747 ( µm ) df = 0.8621 ( µm ) df = 0.9833 ( µm )

0 2 4 6 8 10 12 14 16 18 20

Wavelength (

m )

0 20 40 60 80 100

Transmittance (%)

BST on MgO

substrate df = 0.0472 ( µm ) df = 0.0945 ( µm ) df = 0.1890 ( µm ) df = 0.2413 ( µm ) df = 0.3524 ( µm ) df = 0.4922 ( µm ) df = 0.6665 ( µm )

圖 4-20 在常溫下量測石英基材上鍍上不同厚度之鋇鍶鈦薄膜的穿透率

圖 4-21 在常溫下量測氧化鎂基材上鍍上不同厚度之鋇鍶鈦薄膜的穿透率

0 2 4 6 8 10 12 14 16 18 20

Wavelength (

m )

0 20 40 60 80 100

Transmit tance (%)

BST on Silicon

substrate df = 0.4437 ( µm ) df = 0.5898 ( µm ) df = 0.6426 ( µm )

0 2 4 6 8 10 12 14 16 18 20

Wavelength (

m )

0 20 40 60 80 100

Reflectance (%)

BST on Fused-Quartz

圖 4-22 在常溫下量測矽基材上鍍上不同厚度之鋇鍶鈦薄膜的穿透率

圖 4-23 在常溫下量測石英基材上鍍上不同厚度之鋇鍶鈦薄膜的反射率

0 2 4 6 8 10 12 14 16 18 20

Wavelength ( µ m )

0 20 40 60 80 100

Reflectance (%)

BST on MgO

substrate df = 0.0472 ( µm ) df = 0.945 ( µm ) df = 0.1890 ( µm ) df = 0.2413 ( µm ) df = 0.3524 ( µm ) df = 0.4922 ( µm ) df = 0.6665 ( µm )

0 2 4 6 8 10 12 14 16 18 20

Wavelength (

m )

0 20 40 60 80 100

Reflectance (%)

BST on silicon

substrate df = 0.4437 ( µm ) df = 0.5898 ( µm ) df = 0.6426 ( µm )

圖 4-24 在常溫下量測氧化鎂基材上鍍上不同厚度之鋇鍶鈦薄膜的反射率

圖 4-25 在常溫下量測矽基材上鍍上不同厚度之鋇鍶鈦薄膜的反射率

0 2 4 6 8 10 12 14 16 18 20

Wavelength (

m )

0 20 40 60 80 100

Absorptance (%)

BST on Fused-Quartz

0 2 4 6 8 10 12 14 16 18 20

Wavelength (

m )

0 20 40 60 80 100

Absorptance (%)

BST on MgO substrate d_f= 0.0472 ( µm ) df = 0.0945 ( µm ) d_f= 0.1890 ( µm ) df = 0.2413 ( µm ) d_f= 0.3524 ( µm ) df = 0.4922 ( µm ) d_f= 0.6665 ( µm )

圖 4-26 在石英基材上不同厚度之鋇鍶鈦薄膜的吸收率

圖 4-27 在氧化鎂基材上不同厚度之鋇鍶鈦薄膜的吸收率

0 2 4 6 8 10 12 14 16 18 20

Wavelength (

m )

0 20 40 60 80 100

A b sorptance (%)

BST on Silicon

substrate df = 0.4437 ( µm ) df = 0.5898 ( µm ) df = 0.6426 ( µm )

0 1 2 3 4

Wavelength (

m )

0 20 40 60 80 100

Transm ittanc e (%)

BST thin films

df = 0.0999 ( µm ) df = 0.2939 ( µm ) df = 0.4110 ( µm ) df = 0.5109 ( µm ) df = 0.7747 ( µm ) df = 0.8621 ( µm ) df = 0.9833 ( µm )

圖 4-28 在矽基材上不同厚度之鋇鍶鈦薄膜的吸收率

圖 4-29 在石英基材上不同厚度之鋇鍶鈦薄膜的穿透率

0 2 4 6 8 10 12

Wavelength (

m )

0 20 40 60 80 100

Transm ittanc e (%)

BST thin films

df = 0.0472 ( µm ) df = 0.0945 ( µm ) df = 0.1890 ( µm ) df = 0.2413 ( µm ) df = 0.3524 ( µm ) df = 0.4922 ( µm ) df = 0.6665 ( µm )

0 1 2 3 4

Wavelength ( µ m )

1E+1 1E+2 1E+3 1E+4 1E+5 1E+6 1E+7

E x tinction coe fficient ( m

-1

)

BST thin films df = 0.0999 ( µm ) df = 0.2939 ( µm ) df = 0.4110 ( µm ) df = 0.5109 ( µm ) df = 0.7747 ( µm ) df = 0.8621 ( µm ) df = 0.9833 ( µm )

圖 4-30 在氧化鎂基材上不同厚度之鋇鍶鈦薄膜的穿透率

圖 4-31 在石英基材上不同厚度之鋇鍶鈦薄膜的消散係數

0 2 4 6 8 10 12

Wavelength ( µ m )

1E+1 1E+2 1E+3 1E+4 1E+5 1E+6 1E+7

E x ti n c ti on co ef fi c ien t ( m

-1

)

BST thin films d_f= 0.0472 ( µm ) df = 0.0945 ( µm ) d_f= 0.1890 ( µm ) df = 0.2413 ( µm ) d_f= 0.3524 ( µm ) df = 0.4922 ( µm ) d_f= 0.6665 ( µm )

0.0 0.2 0.4 0.6 0.8 1.0

Wavelength ( µ m )

1.6 2.0 2.4 2.8 3.2

Refr acti ve Index n

BST thin films

df = 0.4437 ( µm ) df = 0.5898 ( µm ) df = 0.6426 ( µm )

圖 4-32 在氧化鎂基材上不同厚度之鋇鍶鈦薄膜的消散係數

圖 4-33 鍍在矽基材上不同厚度的鋇鍶鈦薄膜之折射參數

0.0 0.2 0.4 0.6 0.8 1.0

Wavelength ( µ m )

1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1

Absor p tion Coefficient k

BST thin films

df = 0.4437 ( µm ) df = 0.5898 ( µm ) df = 0.6424 ( µm )

0 4 8 12 16 20

Wavelength (µm)

0 20 40 60 80 100

Transmittance (%)

thin film thickness 0.17 µm thin film thickness 0.4 µm thin film thickness 0.52 µm

圖 4-34 鍍在矽基材上不同厚度的鋇鍶鈦薄膜之吸收係數

圖 4-35 在近、中紅外光區段在矽基材上鍍上不同厚度之鋇鍶鈦薄膜的穿透率

0 4 8 12 16 20

Wavelength (µm)

0 20 40 60 80 100

R ef lectance (%)

thin film thickness 0.17µm thin film thickness 0.4µm thin film thickness 0.52µm

0 0.2 0.4 0.6 0.8

Wavelength (µm)

1.6 2 2.4 2.8 3.2 3.6

R ef ractive in dex , n

film thickness 0.17µm film thickness 0.4µm film thickness 0.52µm

圖 4-36 在近、中紅外光區段在矽基材上鍍上不同厚度之鋇鍶鈦薄膜的反射率

圖 4-37 在可見光區段在矽基材上鍍上不同厚度之鋇鍶鈦薄膜的折射參數

0 0.2 0.4 0.6 0.8

Wavelength (µm)

0 0.4 0.8 1.2 1.6

Absorptive index , k

film thickness 0.17µm film thickness 0.4µm film thickness 0.52µm

0 5 10 15 20

Wavelength (µm)

0 20 40 60 80 100

R eflectance (%)

Si/BST 30 oC 100 oC 200 oC 300 oC 400 oC 500 oC 600 oC 678 oC

圖 4-38 在可見光區段在矽基材上鍍上不同厚度之鋇鍶鈦薄膜的吸收係數

圖 4-39 在近、中紅外光區段在矽基材上鍍上鋇鍶鈦薄膜時在不同的加熱溫度下之反射率

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在文檔中 12吋矽晶圓半導體CVD製程設備及BST介電薄膜成長研究---子計畫II:BST 介電薄膜在12吋矽晶圓上快速熱回火製程中熱物理性質及熱應力之研究(III) (頁 90-121)

第四章 結果與討論

4.2 實驗結果

4.2.3 鋇鍶鈦薄膜在高溫時之熱輻射性質的實驗研究

0 5 10 15 20

Time (sec)

0 200 400 600 800 1000 1200

W afer Center Temperature (

C )

0 20 40 60 80 100 120 140 160

Tem p erature Ram p -u p Rat e (

C/s ec )

0 5 10 15 20 Time (sec)

1.0 1.2 1.4 1.6 1.8 2.0

Ve rt ic al E d ge -H eat- Com p en sa ti on -Scal in g Fa ct or

100 mm 150 mm 200 mm 300 mm

(a)

0 5 10 15 20

Time (sec) 0.0

0.2 0.4 0.6 0.8 1.0

La tera l Ed ge -H eat -C om pe ns at io n- Sca ling Fa ct or

100 mm 150 mm 200 mm 300 mm

(b)

(b) Laterally Edge Heating Compensation (a) Vertically Edge Heating Compensation

0 5 10 15 20

Time (sec)

0.0 0.2 0.4 0.6 0.8 1.0

T edge -T center ( o C )

4-inch 6-inch 8-inch 12-inch

Vertically Laterally

100 mm 150 mm 200 mm 300 mm

Lateral Vertical

0 5 10 15 20

Time (sec)

0 200 400 600 800 1000 1200

Wafer Center Temperature (

C )

σ

σ

σ

(a)

0 5 10 15 20

Time (sec)

-50 0 50 100 150 200 250

Temp erature Ramp-u p Rate (

C/sec )

σ

σ

σ

(b)

σ

σ

σ

σ

Radial Position (cm)

Inc id ent He at Flu x ( W/ cm

)

(a)

Radial Position (cm)

In ci de n t H ea t Fl ux ( W/ cm

)

(b)

Radial Position (cm)

Inci d ent H eat Flux ( W/c m

)

(c)

σ

σ

σ

(a)

(b)

σ

Radial Position (cm)

Tem p erature Difference (

C )

(a)

Radial Position (cm)

T emperature Difference (

C )

(b)

第四章結果與討論

Linear Ramp-up Rate ( ^o C/sec )

R esp o n se ^{70 Volt}

R esp o n se ^{70 Volt}