9. G. S. Huang, Hou-Guang Chen, J. J. Chen, T. C. Lu, H. C. Kuo, and S. C. Wang,
“Hybrid nitride microcavity using crack-free highly reflective AlN/GaN and Ta2O5/SiO2
distributed Bragg mirror”, Phys. Stat. Sol. (a), V204, No. 6, pp1977-1981, (May 15, 2007)
(SCI: 1.221)
盧廷昌，郭浩中，王興宗10. T. Wang, T. Ko, H. Kuo, T. Lu, Min Yu, C. Chuo, and Z. Lee, “Optical and structural properties of a-plane GaN with epitaxial lateral overgrowth”, Phys. Stat. Sol. (c), V4, No.
7, pp2519-2513, (May 31, 2007) (SCI: 1.221)郭浩中
11. T. S. Ko, T. C. Wang, R. C. Gao, H. G. Chen, G. S. Huang, T. C. Lu*, H. C. Kuo, and S.
C. Wang “Observations on surface morphologies and dislocations of a-plane GaN grown
by metal organic chemical vapor deposition”, Phys. Stat. Sol. (c), V4, No. 7, pp2510-2514, May 31, (2007) (SCI: 1.221) 盧廷昌，郭浩中，王興宗12. G. S. Huang, T. C. Lu, H. C. Kuo and S. C. Wang and Hou-Guang Chen,“Fabrication of hybrid nitride microcavity with high quality factor using highly reflective AlN/GaN and Ta2O5/SiO2 distributed Bragg mirrors”, Photon. Tech. Lett., V19, No13, pp999-pp1001, July 1, (2007) (SCI: 2.552) 盧廷昌，郭浩中，王興宗
13. Chun-Feng Lai, Peichen Yu, Te-Chung Wang, Hao-Chung Kuo, Tien-Chang Lu,
Shing-Chung Wang and Chao-Kuei Lee “Lasing Characteristics of a GaN Photonic
Crystal Nanocavity Light Source”, Appl. Phys. Lett., V91, 041101, (Jul. 23, 2007) and was selected in Virtual Journal of Nanoscale Science & Technology – Aug. 6, 2007 V16, Issue 6(SCI: 4.308)盧廷昌，郭浩中，王興宗
國外及國際會議 Conference
1. Y. H. Chang, H. C. Hsueh, F. I Lai, W. Y. Chang, C. C. Yu, W. H. Huang, C. F. Lin, H. C. Kuo, S. C. Wang (2004),” Observation of large spectral blue-shift in photoluminescence spectra of Mg-doped gallium nitride Nanorods”, International Conference on Solid State Devices and Materials (SSDM), Tokyo.
2. Hung-Wen Huang, Tao-Hung Hsueh, Chih-Chiang Kao, Ya-Hsien Chang, Miaochia Ou-Yang, Hao-Chung Kuo and Shing-Chung Wang (2004), "Fabrication of InGaN multi-quantum-well nanorod by Ni nano-mask", The IUMRS International Conference in Asia (IUMRS-ICA), pp.168, Nov. 19-18, 2004 Hsinchu, Taiwan.
3. Y. T. Wang, H. H. Yao, Y. S. Chang, M. C. Ou-Yang, C. F. Lin, H. C. Kuo, S. C. Wang (2004),
"Characteristic of GaN Quantum confined structure on AlN V-shaped nanoholes," The IUMRS International Conference in Asia (IUMRS-ICA), pp. 189, Nov. 19-18, 2004 Hsinchu, Taiwan.
4. H.W. Huang, T.H. Hsueh, C.C. Kao, Y.H. Chang, M.C. Ou-Yang, H.C. Kuo, S.C. Wang (2005), “Fabrication and characterization of InGaN-based nanorods by plasma etching with nanoscale nickel metal islands,” The 1st international conference on one-dimensional nanomaterials (ICON) , NAC106, Jan. 10-14 2005, Taipei, Taiwan.
5. H. W. Huang, T. H. Hsueh, J. K. Sheu, H. C. Kuo and S. C. Wang (2005),
“Photoluminescence from localized states in InGaN nanorods＂, session 9 , APWS, HsinChu.
6. T. H. Hsueh, J. K. Sheu, J. Y. Chu, H. W. Huang, C. C. Kao, H. C. Kuo and S. C. Wang
(2005), “Characteristics of Light Output Efficiency in InGaN-based Micro-Light-Emitting Diode”, APWS.
7. T. H. Hsueh, J. K. Sheu, Y. H. Chang, H. C. Kuo, and S. C. Wang (2005), “Optical properties of InGaN/GaN nanorods fabricated by inductively coupled plasma etching”, IEEE
NANO2005, Japan.
8. T. H. Hsueh, M. Y. Tsai, T. C. Wang, H. C. Kuo, S. C. Wang (2005), “Effects of Thermal Annealing on Optical Properties of InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition”, CLEO-PR 2005 Japan.
9. Y.C. Peng, C.C. Kao, J.Y.Tsai, C.F.Lin, H.C.Kuo and S. C. Wang (2004)” Fabrication and characteristics of InGaN/GaN vertical cavity light emitting diodes” Optics and Photonics Taiwan
10. Min-Ying Tsai, Min You, Te Chung Wang, H.C. Kuo and S. C. Wang (2004)” OPTICAL PROPERTIES OF ULTRA-HIGH-DENSITY INGAN QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION” Optics and Photonics Taiwan 2004 11. Y. T. Wang, H. H. Yao, Y. S. Chang, T. H. Hseuh, H. C. Kuo and S. C. Wang (2004)” Optical
Characteristics of of GaN Quantum Dots Grown on AlN Nanoholes by Metal-organic Chemical Vapor Deposition” Optics and Photonics Taiwan 2004, PA-SA1-02.
12. H.-M. Wu and L.-H. Peng, “High breakdown field (>15MV/Cm) on crystalline β-Ga2O3/GaN metal oxide semiconductor device,” paper M1-1263 presented at The 206th Meeting of The Electrochemical Society 2004 , Honolulu, Hawaii, U.S.A., 2004. (NSC-932215-E-002-012)
13. Y.C. Lin, A.T. Cho, Y.F. Lai ,J.M. Shieh, H.C. Kuo, S. C. Wang (2004)” Silicon Quantum-dots-embedded Mesoporous Nanoscale Silica as the new type high efficient Photonic Emitters” Optics and Photonics Taiwan 2004.
14. Hung-Wen Huang, Chih-Chiang Kao, Ya-Hsien Chang,Tao-Hung Hsueh Miaochia Ou-Yang1, Hao-Chung Kuo1 and Shing-Chung Wang (2004), “FABRICATION OF INGAN MULTI-QUANTUM-WELL NANOROD BY NI NANO-MASK,” Optics and Photonics Taiwan 2004. (獲得2004OPT論文獎)
15. M. Y. Tsai, M. You, T. C. Wang H. C. Kuo and S. C. Wang (2004), “Optical properties of ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition”
物理年會2004.
16. T. H. Hsueh, H. C. Kuo, Y. S. Chang, H. W. Huang, M. C. Ou-yang, C. W. Chang, and S. C.
Wang(2004), "Optical and structural properties of In0.3Ga0.7N nanowires", pp-65 物理年會 2004
17. Chih-Chiang Kao, H. H. Yao, Y. C. Peng, T. C. Lu, H. C. Kuo and S. C. Wang (2005),”An optically pumped blue GaN-based vertical-cavity surface emitting laser employing AlN/GaN and Ta2O5/SiO2 distributed bragg reflectors” CLEO-PR 2005 Japan.
18. Jung-Tang Chu, W.D. Liang, C.C. Kao, H.W. Huang, T. C. Lu, H. C. Kuo and S. C. Wang (2005),” Optically pumped GaN-based vertical cavity surface emitting laser at room temperature” CLEO-PR 2005 Japan.
19. H.-M. Wu, C.-Y, Lu and L.-H. Peng, “Suppression of surface leakage in GaN MOS device by crystalline Ga2O3 layer MOS,” paper Tu-P-016 presented at 6th
International Conference on
Nitride Semiconductors 2005, Bremen, Germany, 2005. (NSC 94-2215-E-002-001)
20. C.-Y. Lu, S.-L. Wang, H.-M. Wu, and L.-H. Peng, “Stimulated emission from GaN microcavity fabricated by wet etching,” paper Th-P-073 presented 6th
International Conference on Nitride Semiconductors 2005, Bremen, Germany, 2005. (NSC
94-2215-E-002-001)21. C.-Y. Lu, C.-W. Chang, L.-F. Lin, C.-H. Lin, L.-H. Peng, J.-Y. Chang, and A. H. Kung,
“Phase-control in photonic-crystal based lasers,” paper presented at US Air Force/Taiwan Nanoscience Initiative Workshop, Honolulu, Feb. 17-18, 2005. (NSC 93-2215-E-002-012 and -005)
22. T. C. Lu, C. C. Kao, H. W. Huang, J. T. Chu, G. S. Huang, H. C. Kuo and S. C. Wang, "Light enhancement in GaN-based emitters by nano-fabrication technique", 5th Cross-strait workshop on Nanoscience and Nanotechnology, 9~11 December, 2006, Hong Kong(2006) 23. T.S. Ko, S. Yang, H.C. Hsu, C.P. Chu, H.F. Lin, S.C. Liao, T.C. Lu, H.C. Kuo, W.F. Hsieh,
S.C. Wang,” ZnO nanopowders fabricated by dc thermal plasma synthesis ”AVS 53rd International Symposium & Exhibition, 12-17 November, San Francisco, CA, USA(2006) 24. H. C. Kuo, T. C. Lu, Y.J. Lee, H. G. Huang, and S. C. Wang, ”Improvement in the Extraction
Efficiency of AlGaInP and GaN Thin Film LEDs Via n-Side Surface Roughing”210th ECS MEETING, 29 October- 3 November, Cancun, Mexico.(2006)
25. G. S. Huang, H. G. Chen, T. C. Lu, T. T. Kao, H. H. Yao, H. C. Kuo and S. C. Wang,
“Crack-free epitaxial nitride microcavity using highly reflective AlN/GaN and Ta2O5/SiO2 Bragg Mirrors”, WeOD1-4, International Workshop on Nitride Semiconductors (IWN2006) Kyoto, October 22-27, 2006 (Oral presentation)
26. T. Ko, T. Wang, R. Gao, C. Chu, T. Lu, H. Kuo and S. Wang, “Study on growth condition of (11-20) a-plane GaN on (1-102) r-plane sapphire by MOCVD”, MoP1-63, International Workshop on Nitride Semiconductors (IWN2006) Kyoto, October 22-27, 2006
27. T. Wang, T. Ko, H. Kuo, T. Lu, Min Yu, C. Chuo, and Z. Lee, “Optical and structural properties of a-plane GaN with epitaxial lateral overgrowth”, MoP1-70, International Workshop on Nitride Semiconductors (IWN2006) Kyoto, October 22-27, 2006
28. C. F. Lai, H. C. Kuo, T. S. Ko, C. E. Lin, C. H. Lin, K. M. Leung, T. C. Lu and S. C. Wang,
“High power and high reliability InGaN/GaN ITO flip chip light emitting diodes with TiO2/SiO2 multilayer stack omnidirectional reflector”, TuP2-63, International Workshop on Nitride Semiconductors (IWN2006) Kyoto, October 22-27, 2006
29. Y. J. Lee, T. C. Lu, H. C. Kuo, S. C. Wang, T. C. Hsu and M. H. Hsieh, “Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrate (CWE-PSS)”, TuP2-71, International Workshop on Nitride Semiconductors (IWN2006) Kyoto, October 22-27, 2006
30. H. G. Chen, H. H. Yao, J. T. Chu, N. F. Hsu, T.C. Lu*, H. C. Kuo and S. C. Wang, “Strong ultraviolet emission from InGaN/AlGaN multi quantum well grown by multi-step process”, I-2-7, the 2006 International Conference on Solid State Devices and Mayterials (SSDM) Yokohama, Sept 12-15, 2006 (oral presentation)
31. Y. C. Lee, C. E. Lee, S. W. Chiou, H. C. Kuo, T. C. Lu and S. C. Wang, “High performance of 650 nm resonant cavity light emitting diodes for plastic optical fiber applications”, B-3-5, the 2006 International Conference on Solid State Devices and Mayterials (SSDM) Yokohama, Sept 12-15, 2006 (oral presentation)
32. P. T. Lee, T. W. Lu, F. M. Tsai, and T. C. Lu, “Lasing Action of Octagonal Quasi-Periodic Photonic Crystal Micro-Cavities,” IEEE/LEOS Indium Phosphide and Related Materials Conference (IPRM2006), ThB1.3, Princeton, NJ, USA, May 5-11, 2006
33. T. W. Lu, F. M Tsai, P. T. Lee, and T. C. Lu, “Modified Octagonal Quasi-Periodic Photonic Crystal Single-Defect Micro-Cavity Lasers,” OSA/IEEE Conference on Laser and Electro-Optics (CLEO2006), JWB11, Long Beach, CA, USA, May 22-25, 2006
34. Y. J. Lee, T.C. Lu, H.C. Kuo, S. C. Wang, T. C. Hsu, M. H. Hsieh, M. J. Jou, and B. J. Lee,”
High Brightness AlGaInP-based LEDs with the Stripe Patterned Omni-Directional Reflector”
CLEO/QELS 2006, 20-26 May, USA(2006)
35. Y. J. Lee, T.C. Lu, H.C. Kuo, S. C. Wang, J. M. Hwang, T. C. Hsu, M. H. Hsieh, and M. J.
Jou,” Fabricating GaN-based LEDs with V-Shape Sapphire Facet Mirror by Double Transferred Scheme ” CLEO/QELS 2006, 20-26 May, USA(2006)
36. Y. A. Chang, S. H. Yen, T. H. Ko, T. C. Wang, C. Y. Lu, H. C. Kuo, Y. K Kuo, T. C Lu, S. C.
Wang,” Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-Emitting Diodes” CLEO/QELS 2006, 20-26 May, USA(2006)
37. F. M. Tsai, P. T. Lee, T. W. Lu, and T. C. Lu, “Fabrication and Characteristics of Two-Dimensional Quasi-Periodic Photonic Crystal Lasers,” OSA/IEEE Conference on Laser and Electro-Optics (CLEO2006) CMKK6, Long Beach, CA, USA, May 22-25, 2006
38. T.S. Ko, C.F. Lay, Y.J. Lee, T.C. Lu*, H.C. Kuo, and S.C. Wang, “Characteristics of InGaN multiple quantum wells grown on patterned sapphire substrates”, Tu-P.11, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22-26, 2006
39. G.S. Huang, H.H. Yao, T.C. Lu, H.C. Kuo, and S.C. Wang, “Fabricatrion and characterization of active region of a terahertz GaN/AlGaN quantum cascade laser”, Tu-P.21, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22-26, 2006
40. H.H. Yao, H.G. Chen, G.S. Huang, T.C. Lu, H.C. Kuo, and S.C. Wang, “High quality and crack-free AlN/GaN distributed Bragg Reflector grown by metal organic chemical vapor deposition”, Tu-P.29, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22-26, 2006
41. Y.A. Chang, C.C. Kao, T.T. Kao, W.K. Tsai, C.L. Yu, Y.T. Wu, F.I. Lai, L.W. Laih, L.H. Laih, H.C. Kuo, T.C. Lu, and S.C. Wang, “MOCVD growth and characterization of temperature insensitive 650-nm resonant-cavity light-emitting diodes”, We-P.53, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22-26, 2006
42. Y.A. Chang, C.C.Kao, H.C. Kuo, J.T. Chu, J.R. Chen, S.H.Yen, C.L. Yu, I.T. Wu, F. I. Lai, T.C. Lu, Y.K. Kuo, and S.C. Wang, “Growth and fabrication of p-side-down InGaAs:Sb/GaAs vertical-cavity surface-emitting lasers”, Fr-B2.1, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22-26, 2006
43. G.S. Huang, H. H. Yao, Y. T. Wang, T. C. Lu, H.C. Kuo, S. C. Wang and L. -H. Peng,
“Infrared reflectance of optic phonon modes in AlGaN epitaxial layers grown on sapphire substrates”, MRS spring meeting in San Francisco. April 17-21, 2006
44. H. H. Yao, G. S. Huang, T.C. Lu, H. C. Kuo and S. C. Wang, “Effects of growth interruption time on InGaN/GaN quantum dots size grown by metal organic chemical vapor deposition”, in Gallium Nitride materials and devices, Vol 6121, part of SPIE’s Integrated Optoelectronics Devices, 2006 San Jose, CA, USA.