In real case, design and process parameters would affect the ρc extraction simultaneously, which leads to the ρc extraction more complex. In our simulation, parameters are discussed separately to reveal their contribution respectively, while they may be dependent on each other. Therefore, taking parameters into consideration at the same time would complete the analysis of the ρc extraction. Besides, among these parameters mentioned in this thesis, the recession shows a more complex influence on the ρc extraction. Since the recession is still needed to analyze, a better description of the relationship between the recession and the ρc would be expected and necessary. Moreover, for smaller Ac, the thickness of NiSi for each contact hole could be different, resulting in the variation of the recession depth. This situation should be also taken into consideration.
As for the devices fabrication, the mTLM method needs to average large amounts of experimental data to diminish the error from the process variation. Hence, sufficient measurable test structures are necessary and would result in better extraction accuracy. In addition, the fabricated test structures could be improved. In the TEM images shown in Fig.3-9, the silicide area was smaller than the contact hole.
Although the ρce could still be extracted, the actual Ac for the CBKR method and the actual Wc for the mTLM method were smaller than the design size. Therefore, better extraction accuracy could be obtained by improving the test structures through
82
fabrication.
Last, by this thesis, it is observed that the accurate low ρc extraction encounters great challenge for both CBKR and mTLM methods. Due to the strong requirement of the accuracy of the ρc extraction, novel test structure and extraction procedure are still critical issue.
83
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