1. 3A002.c.4.b.1.中之發現率也被 稱為攔截率或捕獲率。
2.就 3A002.c.4.b.1.目的，100%發 現率的持續時間，即指定量測不確 定度所需之最低訊號持續時間。
註解：3A002.c.4.不管制僅使用固 定比例頻寬濾波器(又稱倍頻或分 倍頻濾波器)之〝訊號分析儀〞。
續時間為 15 μs 或以下；
技術註解：
1. ‵即時頻寬′指分析儀可持續 傳送時域數據轉換為頻域結果之 最大頻寬範圍，利用傅立葉或其他 離散時間轉換，其處理每一個輸入 時間點，無因間隙或窗口效應，使 測量振幅低於實際訊號振幅超過 3dB。
2. 3A002.c.4.b.1.中之發現率也被 稱為攔截率或捕獲率。
3.就 3A002.c.4.b.1.目的，100%發 現率的持續時間，即指定量測不確 定度所需之最低訊號持續時間。
4. ‵頻率遮罩觸發′指訊號分 析儀之一個機制，其觸發功能可選 擇一個頻率範圍作為擷取頻寬的 一個子集，而可忽略其他可能在同 一擷取頻寬內之信號。一個‵頻率 遮罩觸發′可能有多於一個獨立 限制的設置。
full amplitude due to gaps or windowing effects of signals having a duration of 15 μs or less;
or
2. A "frequency mask trigger"
function with 100 % probability of trigger (capture) for signals having a duration of 15 μs or less;
Technical Notes:
1. Probability of discovery in 3A002.c.4.b.1. is also referred to as probability of intercept or probability of capture.
2. For the purposes of
3A002.c.4.b.1., the duration for 100 % probability of discovery is equivalent to the minimum signal duration necessary for the specified level measurement uncertainty.
having a duration of 15 μs or less;
Technical Notes:
1. 'Real-time bandwidth' is the widest frequency range for which the analyser can continuously transform time-domain data entirely into frequency-domain results, using a Fourier or other discrete time transform that processes every incoming time point, without a reduction of measured amplitude of more than 3 dB below the actual signal amplitude caused by gaps or windowing effects, while outputting or displaying the transformed data.
2. Probability of discovery in 3A002.c.4.b.1. is also referred to as probability of intercept or probability of capture.
3. For the purposes of 3A002.c.4.b.1., the duration for 100 % probability of discovery is equivalent to the minimum signal duration necessary for the specified level measurement uncertainty.
4. A 'frequency mask trigger' is a mechanism where the trigger function is able to select a frequency range to be triggered on as a subset of the acquisition bandwidth while ignoring
55
other signals that may also be present within the same acquisition bandwidth. A 'frequency mask trigger' may contain more than one independent set of limits.
3A002.h
h. 〝電子組裝〞、模組或設備，
特別為執行下列所有特性者：
1. 類比-數位轉換符合下列任一 者：
a. 解析度為 8 位元或以上，但小 於 10 位元，輸入率大於每秒 1,300 百萬字；
b. 解析度為 10 位元或以上，但小 於 12 位元，輸入率大於每秒 1,000 百萬字；
c. 解析度為 12 位元或以上，但小 於 14 位元，輸入率大於每秒 1,000 百萬字；
d. 解析度大於 14 位元，但小於或 等於 16 位元，輸入率大於每秒 400 百萬字；或
e. 解析度大於 16 位元，輸入率大 於每秒 180 百萬字；及
h. 〝電子組裝〞、模組或設備，
特別為執行下列所有特性者：
1. 類比－數位轉換符合下列任一 者：
a. 解析度為 8 位元或以上，但小 於 10 位元，〝取樣率〞大於每秒 1.3 十億次取樣(GSPS)；
b. 解析度為 10 位元或以上，但小 於 12 位元，〝取樣率〞大於每秒 1.0 十億次取樣(GSPS)；
c. 解析度為 12 位元或以上，但小 於 14 位元，〝取樣率〞大於每秒 1.0 十億次取樣(GSPS)；
d. 解析度大於 14 位元，但小於或 等於 16 位元，〝取樣率〞大於每 秒 400 百萬次取樣(MSPS)；或 e. 解析度大於 16 位元， 〝取樣率〞
大於每秒 180 百萬次取樣 (MSPS)；及
h. "Electronic assemblies", modules, or equipment, specified to perform all of the following:
1. Analogue-to-digital
conversions meeting any of the following:
a. A resolution of 8 bit or more, but less than 10 bit, with an input sample rate greater than 1 300 million samples per second;
b. A resolution of 10 bit or more, but less than 12 bit, with an input sample rate greater than 1 000 million samples per second;
c. A resolution of 12 bit or more, but less than 14 bit, with an input sample rate greater than 1 000 million samples per second;
d. A resolution of 14 bit or more but less than 16 bit, with an input
h. "Electronic assemblies", modules, or equipment, specified to perform all of the following:
1. Analogue-to-digital conversions meeting any of the following:
a. A resolution of 8 bit or more, but less than 10 bit, with a "sample rate" greater than 1,3 Giga Samples Per Second (GSPS);
b. A resolution of 10 bit or more, but less than 12 bit, with a "sample rate" greater than 1.0 GSPS;
c. A resolution of 12 bit or more, but less than 14 bit, with a "sample rate" greater than 1.0 GSPS;
d. A resolution of 14 bit or more but less than 16 bit, with a "sample rate" greater than 400 Mega Samples Per Second (MSPS); or
e. A resolution of 16 bit or more with a "sample rate" greater than 180 MSPS; andEN
56
sample rate greater than 400 million samples per second; or e. A resolution of 16 bit or more with an input sample rate greater than 180 million samples per second; and
3A002.h 技 術註解
技術註解：
多頻道〝電子組裝〞或模組之管制 狀態由單一頻道最高性能決定。
技術註解：
1. n 位元之解析度係對應於一個 量子化的 2n 種狀態。
2. 輸出字的位元數相等於數位－
類比轉換器之解析度，有效位元數 (ENOB)不用於判讀 ADC 之解析 度。
3. 對於非交錯式多頻道〝電子組 裝〞、模組或設備而言，〝取樣率〞
非匯總結果，且〝取樣率〞是指任 何單一頻道之最大輸出率。
4. 對於交錯式多頻道〝電子組 裝〞、模組或設備而言，〝取樣率〞
為匯總結果，〝取樣率〞為所有交 錯頻道之最大輸出率組合。
Technical Note:
For multiple-channel "electronic assemblies" or modules, control status is determined by the highest single-channel specified
performance.
Technical Notes:
1. A resolution of n bit corresponds to a quantisation of 2 n levels.
2. The resolution of the ADC is the number of bits of the digital output of the ADC that represents the measured analogue input. Effective Number of Bits (ENOB) is not used to determine the resolution of the ADC.
3. For non-interleaved multiple-channel
"electronic assemblies", modules, or equipment, the "sample rate" is not aggregated and the
"sample rate" is the maximum rate of any single-channel.
4. For interleaved channels on multiple-channel
"electronic assemblies", modules, or equipment, the "sample rates" are aggregated and the "sample rate" is the maximum combined total rate of all the interleaved channels.
57 3A233
3A233 除 0B002.g.所述以外之如 下質譜儀，能夠量測 230 原子質量 單位或以上之離子，且其解析度優 於 2/230，及其離子源：
3A233 除 0B002.g.所述以外之如 下質譜儀，能夠量測 230 u 或以上 之離子，且其解析度優於 2/230，
及其離子源：
3A233 Mass spectrometers, other than those specified in 0B002.g., capable of measuring ions of 230 atomic mass units or greater and having a resolution of better than 2 parts in 230, as follows, and ion sources therefor:
3A233 Mass spectrometers, other than those specified in 0B002.g., capable of measuring ions of 230 u or greater and having a resolution of better than 2 parts in 230, as follows, and ion sources therefor:
3B001
h. 具相位移層之多層光罩，未由 3B001.g.規範且具有下列任一特 性：
1. 以玻璃光罩〝空白基板〞製成 其雙折射小於 7 nm/cm；或 2. 設計用於微影製程設備其光源 波長小於 245 nm；
註解：3B001.h.不管制為製造不受 3A001 所管制之記憶體元件而設 計具相位移層之多層光罩。
i. 設計用於 3A001 所述之積體電 路之壓模微影模板。
h. 具相位移層之多層光罩，未在 3B001.g.中規範且具下列任一特 性：
1. 以玻璃光罩〝空白基板〞製成 其雙折射小於 7 nm/cm；或 2. 設計用於微影製程設備其光源 波長小於 245 nm；
註解：3B001.h.不管制為製造不受 3A001 所管制之記憶體元件而設 計具相位移層之多層光罩。
i. 設計用於 3A001 所述之積體電 路之壓模微影模板；
j. 光罩〝毛坯基板〞具由鉬與矽製 成的多層反射結構，且具下列所有 特性：
1. 特別設計為‵極紫外線 (EUV) ′微影製程；及
h. Multi-layer masks with a phase shift layer not specified by 3B001.g. and having any of the following:
1. Made on a mask "substrate blank"
from glass specified as having less than 7 nm/cm birefringence; or 2. Designed to be used by lithography equipment having a light source wavelength less than 245 nm;
Note: 3B001.h. does not control multi-layer masks with a phase shift layer designed for the fabrication of memory devices not controlled by 3A001.
i. Imprint lithography templates
h. Multi-layer masks with a phase shift layer not specified in 3B001.g. and having any of the following:
1. Made on a mask "substrate blank" from glass specified as having less than 7 nm/cm
birefringence; or
2. Designed to be used by lithography equipment having a light source wavelength less than 245 nm;
Note: 3B001.h. does not control multi-layer masks with a phase shift layer designed for the fabrication of memory devices not specified in 3A001.
i. Imprint lithography templates designed for integrated circuits specified in 3A001.
j. Mask "substrate blanks" with multilayer reflector structure consisting of molybdenum and