Energy dispersive x-ray (EDX) with electron beam of 2-nm spot size equipped on an HRTEM was performed for composition analysis. The cross-sectional TEM
(XTEM) image showing the Pt/InGaP interface for an as-deposited sample is presented in Figure 2(a). Each layer was identified by the nano-beam EDX analysis.
As is obvious, there is a 7.5 nm-thick amorphous layer existing at the Pt/InGaP interface and similar results were also found in the as-deposited Pt/GaAs interfaces [45] even for samples as-deposited at room temperature. The amorphous phase formation implicates the enormous inherent thermodynamic driving forces [45]that push the Pt atoms over the diffusion barrier to migrate into the InGaP layer. After annealing at 325 for 1min℃ ute, the thickness of the amorphous layer increased from 7.5 nm to 12.8 nm. The diminution of the InGaP layer is due to the fact that more Pt atoms diffused into the pristine InGaP layer after thermal annealing. The diffusion boundary between InGaP and the amorphous layer was non-uniform, which could be caused by the non-uniform thermal process due to the short-time annealing.
Figure 3 (a) shows the cross-sectional HRTEM image of the Pt and InGaP interface reaction, whereas Figure 3(b) gives the selected area diffraction patterns of the amorphous layer after 325 annealing for 10 minutes.℃ The nucleation of the crystalline phase occurred in the amorphous layer after annealing for 10 minutes at 325℃ as shown in Figure 3(c). The HRTEM image of the InGaP/GaAs interface after annealing at 325℃ for three hours is provided in Figure 4(a). The crystalline grains were observed in the amorphous layer near its interface with InGaP and were
identified as an orthorhombic Ga2Pt (422) phase, judged from the nano beam selected area diffraction patterns shown in Figure 4(b). The STEM image of the Pt/InGaP interface after annealing at 325℃ for three hours is presented in Figure 5(a). However, near the interface of the amorphous layer with Pt, a tetragonal GaPt3 (422) phase was observed as identified, as shown in Figure 5(b). On the basis of these observations, this thin amorphous layer, it can be concluded, could be a precursory step to forming more stable Ga2Pt (422) and GaPt3 (422) phases at the later stage of annealing. The new phases of the Ga2Pt (422) and GaPt3 (422) existed in different locations of the amorphous layer. The Ga2Pt (422) near the InGaP layer was a result of the out-diffusion of Ga from InGaP into the amorphous layer, and GaPt3 (422) was present near the alloy-Pt interface.
Figure 6 shows the I-V characteristics of the diodes before and after annealing, the leakage current decreased after 325℃, 1 minute annealing, possibly due to Pt diffusion [46]. After 325℃ annealing for 10 minutes, the diodes’ performance remained almost unchanged even with the crystalline phase nucleated at the amorphous layer as shown in Figure 3(b). The diodes performance degradation after the 325 3℃ -hour annealing is attributed to the formations Ga2Pt (422) and GaPt3
(422).
7-4 Summary
The interfacial reactions between the Pt and the InGaP layers after thermal annealing were investigated in this study. An amorphous layer approximately 7.5nm-thick formed between the Pt and InGaP layers after gate metal deposition due to the release of latent heat. After annealing at 325℃ for 10 minutes, the nucleation occurred in the amorphous layer located at InGaP and Pt interface. This amorphous layer represents the intermediate step for the formation of a new phase. Moreover, the thickness of the amorphous layer remained unchanged, indicating that the insertion of Ti layer at 325℃ was effective as a diffusion barrier. After annealing for three hours at 325℃, the stable Ga2Pt(422) and GaPt3(422) phases formed in the InGaP layer; moreover, apart from the bottom Pt, Au, middle Pt and Ti reflexes, no other phases could be found. Therefore, it can be concluded that these new phase formations have a degrading effect on electrical characteristics. Moreover, the Ga2Pt (422) phase observed at the InGaP/GaAs interface exhibited a continuous diffusion of Pt atoms even after three hours of annealing. Thus, further study of Pt diffusion with a thinner bottom Pt layer thickness at various annealing temperatures and durations may be required to optimize the Schottky characteristics stabilization. In short, the thermal degradation mechanism of Pt/InGaP Schottky contacts was caused by formation of
the Ga2Pt(422) and GaPt3(422) compounds due to the Pt diffusion during thermal annealing.
Ti Pt
Pt InGaP
Amorphous Au
100nm
Figure 7-1 The HRTEM image of InGaP/Pt/Ti/Pt/Au
Ti
Pt
Amorphous
20nm (a)
10nm InGaP
Pt
Amorphous
InGaP (b)
Figure 7-2 (a) The cross-sectional HRTEM image of Pt and InGaP interface after metal deposition. (b) The cross-sectional HRTEM image of the Pt and InGaP interface after annealing at 325 for 1℃ minute.
Pt
Figure 7-3 (a) The cross-sectional HRTEM image of the Pt and InGaP interface after annealing at 325 for 1℃ 0 minutes.
(b) The Fast Fourier transform (FFT) lattice image of the amorphous area which was shown in Figure 2(a). The nucleation area was labeled by white square.
(c) Nano –beam selected area electron diffraction pattern of the amorphous area shown in Figure 2(a).
Pt + InGaP Pt
5 nm
InGaP
(a)
(b)
(110)
Nucleation
(c)
grain
(a)
2nm
Ga2Pt (422)
Ga2Pt (422) (b)
Figure 7-4 (a) The cross-sectional HRTEM image of Pt and InGaP interface after 325℃ for 3 hours annealing.
(b) Nano-beam selected area diffraction pattern of Ga2Pt (422)
InXGa1-XA
Ga2Pt (422)
(b)
grain
4 nm
(a)
GaPt3(422)
GaPt3(422)
(b)
Figure 7-5 (a) The cross-sectional HRTEM image of Pt and InGaP interface after 325℃ for 3 hours annealing.
(b) Nano-beam selected area diffraction pattern of GaPt3 (422)
Figure 7-6 I-V characteristics of the Schottky diodes before and after annealing.
Chapter 8 Conclusions
A single voltage supply, high frequency and high power density Enhancement-mode InGaP/AlGaAs/InGaAs PHEMT was developed for low-voltage wireless application. The excellent threshold voltage uniformity and performance of the E-mode PHEMT were due to the use of InGaP/AlGaAs/InGaAs layer structure which took advantages of the high etching electivity between InGaP/GaAs and high electron mobility due to the use of AlGaAs spacer layer. The calculated fT and fmax of the E-mode PHEMT were 60 GHz and 128 GHz, respectively. The noise figure of the deviceat 17GHz was measured to be 1.02dB with 10.12dB associated gain. High power performance was also achieved, the E-mode PHEMT exhibited a maximum PAE of 70% with maximum power densityof 18.61 dBm at 2.4GHz.
However, advanced high performance wireless application systems, such as Wide-band Code-Division Multiple-Access (W-CDMA) system has imposed stringent requirements on the devices efficiency, linearity and power consumption. While linearity has been an important figure of merit for devices, it is also necessary for the device to meet the noise characteristics to guarantee minimum signal distortion at the receiving end of modern communication systems. In this study, high linearity and low
noise Enhancement-mode InGaP/AlGaAs/InGaAs PHEMT was developed for low-voltage operation wireless application. To improve the device linearity, it is required for the transconductance of the device to remain constant over the operating gate bias range to minimize the third-order distortion. Therefore, flatten transconductance (Gm) profile will result in lower IM3 levels and higher third-order intercept point (IP3), and thus improve the device linearity. The developed E-mode PHEMT exhibited Fmin of 0.86 dB with 12.21 dB associated gain at 10 GHz. The device also demonstrated high linearity characteristics due to the optimal double delta doping structure. The Enhancement-mode InGaP/AlGaAs/InGaAs PHEMT demonstrated only 1.25 dBm back-off from P1dB and achieved excellent linearity with OIP3 - P1dB of 13.2 dB and a high linear power efficiency of 35% when under W-CDMA modulation. The developed Enhancement-mode InGaP/AlGaAs/InGaA PHEMTs with low noise and high OIP3 are of great use for the wireless communication applications.
In addition, the use of the Pt buried gate technology on the fabrication of the InGaP/AlGaAs/InGaAs E-mode PHEMT was realized successfully. The threshold voltage distribution of the device after gate sink was very uniform and reproducible.
The amorphous layer formation between Pt and InGaP layer after gate sinking as observed by TEM was believed to be the cause of the threshold voltage shift and the
Schottky barrier height increase. The fabricated E-mode PHEMTdevice with gate sinking showed excellent RF performance, good threshold voltage uniformity and reduced gate and drain leakage currents. Thus, the use of the gate sinking technology is proved to be very useful for the E-mode InGaP/AlGaAs/InGaAs PHEMTs fabrication.
Finally, the interfacial reactions between the Pt and the InGaP layer after thermal annealing had been investigated. A 7.5nm-thick amorphous layer was formed between Pt and InGaP layer after the room-temperature gate-metal deposition. After annealing at 325 for 10 minutes, crystallizations took place in the amorphous layer. At this ℃ stage, the thickness of amorphous layer remained unchanged; indicating that insertion of the Ti layer was effective as a diffusion barrier at 325 .℃ After annealing for 3 hours at 325℃, however, stable phases of Ga2Pt(422) and GaPt3(422) formed in the InGaP layer, though not in the Schottky metal stack, leading to degradation of the diode performances. However, the Ga2Pt (422) phase was observed at the InGaP/GaAs interface, exhibiting continuing diffusion of Pt atoms beyond the 3-hour annealing. Thus, further study on the Pt diffusion at various annealing temperatures and durations for the contact metal stacks with, for example, thinner bottom Pt layers may be necessary to optimize the Schottky characteristics stabilization.
REFERENCE
[1] Ralph Williams, “Modern GaAs Processing Methods” Artech House, Norwood, MA, 1990
[2] J. Michael Goli, “Microwave MESFETs and HEMTs”, Artech House, Norwood, MA, 1991
[3] Fazal Ali, Aditya Gupta, “HEMTs and HBTs:Devices, Fabrication, and Circuits”
Artech House, Norwood, MA,1991
[4] Cheng T. Wang, “Introduction to semiconductor technology: GaAs and Related Compounds”, John Wiley, 1990.
[5] T.mimura, S.Hiyamizu, T. Fujii and K. Nanbu, “A new field-effect transistor with selectively doped GaAs/n-AlxGa1-xAs heterojunction”, Jpn. J. Appl. Phys, vol.19, pp. L225-227, 1980.
[6] Scott A. Wartenberg, et al., “The EPHEMT Gate at Microwave Frequencies”
technical paper, 2002.
[7] K. L. Tan, et al., “Ultralow-Noise W-band Pseudomorphic InGaAs HEMT’s”, IEEE Electron Device Lett., vol. 11, No. 7, pp.303-305, 1990.
[8] S.M. Sze, “High speed semiconductor devices”. John Wiley, 1990.
[9] Donald A. Neamen, “Semiconductor physics and Devices,” Third Edition, Mc Graw Hill, 2003
[10] “High Frequency Transistor Primer”, Agilent Technologies Application Note [11] P. M. Smith, P. C. Chao, U. K. Mishra, S. C. Palmateer, K.H.G. Duh, and J.C.M.
Hwang,” Millimeter wave power performance of 0.25μm gate-length HEMTs and GaAs FETs,” in Proc. IEEE/Cornell Conf. on Advanced concepts in high speed semiconductor device and circuits, pp.189, 1985.
[12] S.Yoshida, Y. Wakabayashi, M.kohno, and K. Uemura, ”Greater then 70% PAE enhancement-mode GaAs HJFET power amplifer MMIC with extremely low leakage current,” IEEE MTT-S Dig., vol. 3, pp.1183-1186, 1999.
[13] Der-Woei Wu, Ray Parkhurst, Shyh-Liang Fu, John Wei, Chung-Yi Su, Shih-Shun Chang, Dennis Moy, Wesley Fields, Patrick Chye, Rich levitsky, “A 2W, 65% PAE Single-supply enhancement-mode power PHMET for 3V pcs applications,” IEEE MTT-S Dig., pp.1319-1322, 1997.
[14] Yasunori Bito, Takehiko Kato, Naotaka Iwata, “Enhancement-mode Power Heterojunction FET Utilizing Al0.5Ga0.5As barrier layer with Negligible Operation Gate current for Digital Cellular Phones,” IEEE Trans. on Electron Devices, vol.
48, No 8, pp. 1503 – 1509, 2001.
[15] Shuyun Zhang, Jiang Cao, Rob Mcmorrow, “E-PHEMT, Single Supply, High Efficient Power amplifiers for GSM and DCS Applications”, IEEE MTT-S Dig., pp.927-930, 2001.
[16] H.K. Huang, Y.H. Wang, C.L. Wu, J.C. Wang, and C.S. Chang, “Super Low Noise InGaP Gated PHEMT,” IEEE Electron Device Lett., vol. 23, No 2, pp.70-72, 2002.
[17] T. Takahashi, S. Sasa, A. Kawano, T. Iwai, and T. Fuji, “High-reliability InGaP/GaAs HBTs fabricated by self-aligned process,” IEEE IEDM 191-914, 1994.
[18] E. Lan, B. Pitts, M. Mikhov, and Olin Hartin, “InGaP PHEMTs for wireless Power Application” IEEE MTT-S Dig., pp.22155-2157, 2001.
[19] Ming-Yih Kao, Edward A. Beam Ⅲ, Paul Saunier, and William R. Frensley
“X-band InGaP PHEMTs with 70% Power-Added Efficiency,” IEEE MTT-S Dig., vol.3, pp.1671-1674, 1998.
[20] Mohamed Missous, Azlan Abdul Aziz and Adarsh Sandhu “InGaP/InGaAs/GaAs High Electron Mobility Transistor Structure Grown by Solid Source Molecular Beam Epitaxy Using GaP as Phosphorous Source” Jpn. J. Appl. Phys.
vol.36,L647-L649, 1997.
[21] F.E.G. Guimaraes, B. Elsner, R. Westphalen, B. Spangenberg, H.J. Geelen, P.
Balk, K. Heime, “LP-MOVPE growth and optical characteristic of InGaP/GaAs heterostructure: interface, quantum wells and quantum wires” J. Crystal Growth vol.124, pp.199,1992.
[22] Y.C. Hsieh, E. Y. Chang, S.S. Yeh, C. W. Chang, G.L. Luo, C. Y. Chang,
“Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device application”, J. Crystal Growth, vol. 289, pp.96-101, 2006.
[23] O.schuler, O.Dehaese, X. Wallart, F. Mollot, “Interface quality and electron transfer at the GaInP on GaAs heterojunctions,” J. Appl. Phys., vol. 84, no. 2, pp.
765-769, 1998
[24] H.Q. Zheng, S.F. Yoon, B.P. Gay, K.W. Mah, K. Radhakrishnan, G.I. Ng,
“Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures,” J. Crystal Growth, vol.216, pp. 51-56,2000.
[25] Sushi Kuma, Michael Vice, Henrik Morkner and Wayne Lam, ”Enhancement mode GaAs PHEMT LNA with linearity Control(IP3) and Phased matched Mitigated Bypass Switch and Differential Active Mixer,” IEEE MTT-S Dig., pp.1577-1580, 2003.
[26] Yasunori Bito, Takehiko Kato, Teruhisa Kato and Naotaka Lwata, “High Efficiency Power Amplifier Module with Novel Enhancement-mode Heterojunction FETs for Wide-Band CDMA Handsets” IEEE GaAs Dig., pp.255-258, 2000.
[27] Taisuke Iwai, Kazuhiko Kobayashi, Yasuhiro Nakasha, Takumi Miyashita, Shiro Ohara, and Kazukiyo Joshin, “42% High-Efficiency Two-Stage HBT Power-Amplifier MMIC for W-CDMA Cellular Phone Systems”, IEEE Trans.
on Microwave Theory and Techniques, vol. 48, No 12, pp.2567-2571, 2000.
[28] K. Y. Hur, K. T. Hetzler, R. A. McTaggart, D. W. Vye, P. J. Lwmonias and W. E.
Hoke,” Ultralinear double pulse doped AlInAs/GaInAs/InP HEMTs, Electron.
Lett.,vol. 32, pp.1516-1518, 1996.
[29] P. K. Jkalainen, L. C. Witkowski and Y. C. Kao,” Low-noise low DC power linear FET’. European Microwave Conf. Proc., Vol. 1, pp. 570–575,1992
[30] Y. C. Lin, E. Y. Chang, H. M. Lee and C. Y. Chang,” InGaP/InGaAs PHEMT with high IP3 for low noise applications”, Electron. Lett., vol. 40,pp 777-778,2004.
[31] “Intermodulation Distortion Application Note”, Anritsu Company Inc.
[32] I. Takenaka, H. Takahashi, K. Ishikure, K. Hasegawa, K. Asano and M.
Kanamori,” A 240 W Doherty GaAs power FET amplifier with high efficiency and low distortion for W-CDMA base stations”, IEEE MTTS Dig., 2004,vol.2 , pp. 525.
[33] G. Hau, T. B. Nishimura and N. Iwata, “A Highly Efficient Linearized Wide-Band CDMA Handset Power Amplifier Based on Pre-distortion Under
Various Bias Conditions,” IEEE Trans. on Microwave Theory Tech., vol.49, pp.1194-1201, 2001.
[34] Sushi Kuma, Michael Vice, Henrik Morkner and Wayne Lam, ”Enhancement mode GaAs PHEMT LNA with linearity Control(IP3) and Phased matched Mitigated Bypass Switch and Differential Active Mixer,” IEEE MTT-S Dig., pp.1577-1580, 2003.
[35] Der-Woei Wu, Ray Parkhurst, Shyh-Liang Fu, John Wei, Chung-Yi Su, Shih-Shun Chang, Dennis Moy, Wesley Fields, Patrick Chye, Rich Levitsky, “A 2W, 65% PAE Single-Supply Enhancement-Mode Power PHEMT for 3V PCS Applications,” IEEE MTT-S Dig., pp.1319-1322, 1997.
[36] Shuyun Zhang, Jiang Cao, Rob McMorrow, “E-PHEMT, Single Supply, High Efficient Power amplifiers for GSM and DCS Applications,” IEEE MTT-S Dig., pp.927-930, 2001.
[37] S.Yoshida, Y. Wakabayashi, M. Kohno, and K. Uemura, ”Greater then 70% PAE enhancement-mode GaAs HJFET power amplifer MMIC with extremely low leakage current,” IEEE MTT-S Dig., vol. 3, pp.1183-1186, 1999.
[38] Mohamed Missous, Azlan Abdul Aziz and Adarsh Sandhu “InGaP/InGaAs/GaAs High Electron Mobility Transistor Structure Grown by Solid Source Molecular Beam Epitaxy Using GaP as Phosphorous Source” Jpn. J. Appl. Phys.
Vol.36 ,L647-L649, 1997.
[39] F.E.G. Guimaraes, B. Elsner, R. Westphalen, B. Spangenberg, H.J. Geelen, P.
Balk, K. Heime, “LP-MOVPE growth and optical characteristic of InGaP/GaAs heterostructure: interface, quantum wells and quantum wires” J. Crystal Growth ,vol.124, pp. 199, 1992.
[40] H.Q. Zheng, S.F. Yoon, B.P. Gay, K.W. Mah, K. Radhakrishnan, G.I. Ng,
“Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures,” J. Crystal Growth, vol.216, pp.51-56, 2000
[41] K. J. Chen, T. Enoki, K. Maezawa, K. Arai, and M. Yamamoto
“High-performance InP-Based Enhancement-mode HEMT’s using non-alloyed Ohmic Contacts and Pt-Buried-Gate Technologies”. IEEE Trans. on Electron Devices, Vol. 43, no.2, pp. 252-257, 1996.
[42] A. Mahajan, M. Arafa, P. Fay, C. Caneau, and I. Adesida, “Enhancement-Mode High Electron Mobility Transistors (E-HEMT's) Lattice-Matched to InP,” IEEE Trans. on Electron Devices, vol. 45, no. 12, pp. 2422-2429, 1998.
[43] H.Maher, P. Baudet, I. El Makoudi, M-G Périchaud, J. Bellaiche, M. Renviosé, U.
Rouchy, P. Frijlink, ”A True E-mode MHEMT with high static and dynamic performance,” in the Tech Digst of InP and Related Material Conference,
pp.185-187, 2006
[44] Ko, Dae-Hong, Sinclair, Robert, “Amorphous phase formation in an as-deposited platinum-GaAs interface,” Appl. Phys. Lett., vol. 58,1991, pp.1851-1853,1991 [45] C. Fontaine, T. Okumura, and K. N. Tu, “Interfacial reaction and Schottky
barrier between Pt and GaAs,” J. Appl. Phys, vol. 54, pp.1404-1412,1983 [46] Seiyon Kim, Ilesanmi Adesida, Heedon Hwang, “Measurements of the thermally
induced nanometer-scale diffusion depth of Pt/Ti/Pt/Au gate metallization on InAlAs/InGaAs high-electron mobility transistors,” Appl. Phys. Lett., vol.87, pp.232102, 2005
[47] P. Fay, K. Stevens, J. Elliot, and N. Pan, “Gate Length Scaling in High Performance InGaP/InGaAs/GaAs PHEMTs,” IEEE Electron Device Lett., Vol.20, pp.554, 1999.
[48] Y.C. Lin, E.Y. Chang, G.J. Chen, H.M. Lee, G.W. Huang, D. Biswas, CY Chang ,” InGaP⁄InGaAs PHEMT with high IP3 for low noise applications” , Electronics Lett., vol. 40, pp.777, 2004.
[49] E Nebauer, M Mai, J Wurfl and W Osterle,” Au/Pt/Ti/Pt base contacts to n-InGaP/p+-GaAs for self-passivating HBT ledge structures, “ Semicond. Sci.
Technol..vol15, pp.818, 2000.
[50] L. H. Chu, E. Y. Chang, L. Chang, Y. H. Wu, S. H. Chen, H. T. Hsu, T. L. Lee, Y. C. Lien , C. Y. Chang, “Effect of gate sinking on the device performance of the InGaP/AlGaAs/InGaAs Enhancemnet-mode PHEMT”, IEEE Electron Device Lett. Vol.28, pp.82, 2007.
[51] J. R. Lothian, Ren F, Kuo JM, Weiner JS, Chen YK, “Pt/Ti/Pt/Au Schottky contacts on InGaP/GaAs HEMTs ,” Solid State Electron., vol.41, pp.673,1997.
[52] M. O. Watanabe and Y. Ohba,” Se-related Deep Levels in InGaAlP”, J. Appl.
Phys., vol. 60, pp.1032, 1986.
[53] C. T. Lee, H. P. Shiao, N. T. Yeh, C. D. Tsai, Y. T. Lyu, and Y. K. Tu,” Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals”, Solid State Electron., vol 41,pp 1, 1997.
[54] C. T. Lee, M. H. Lan, and C. D. Tasi, “Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)2Sx treatment", Solid-State Electronics, vol. 41, pp. 1715-1719, 1997.
[55] K. Shiojima, K. Nishimura, and F. Hyuga,” Thermal stability and degration mechamism of WsiN/InGaP schottky diodes”, J.Vac.Sci. Techol. (B), vol.14, pp.652, 1996.
[56] D. S. Liu and C. T. Lee C.W. Wang, “Properties of Cu/Au Schottky contacts on InGaP layer “,J. Appl. Phys., vol. 94, pp.3805, 2003.
[57] D. S. Liu and C. T. Lee, “Investigation of the thermal degradation mechanism for Cu/Au schottky contacts to the InGaP layer”, J. Appl. Phys., vol.91, pp.1349 2002.
[58] D. S. Liu and C. T. Lee, “Microstructure evolution and failure mechanism for Cu/Au Schottky contacts to InGaP layer “, J. Appl. Phys., vol. 92, pp. 987 (2002).
[59] P. Fay, K. Stevens, J. Elliot, and N. Pan, “InGaP/InGaAs/GaAs pHEMT's on gate metallization”, IEEE Electron. Device Lett., vol. 20, pp. 554–556, 1999.
[60] G. Stareev, H. Kunzel, and G. Dortmann, “A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors”, J. Appl. Phys., vol.74, pp.7344, 1993.
簡歷 姓名：褚立新
性別：男
生日：民國67 年 9 月 15 日 籍貫：台北市
學歷：
國立交通大學機械工程系學士
（民國87 年 9 月－民國 89 年 6 月）
國立交通大學材料科學與工程研究所碩士
（民國89 年 9 月－民國 90 年 6 月）
國立交通大學材料科學與工程研究所博士
（民國90 年 9 月－民國 96 年 1 月）
博士論文題目：
增強型磷化銦鎵/砷化鋁鎵/砷化銦鎵假晶高電子遷移率電晶體之研究
The study of Enhancement-mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor