1. Instead of Fe, Cr is able to grow CNTs with good alignment and high density. Under H2 plasma treatment for 30min and H2/CH4=40/10 with bias of 150V for 15 min, CNTs with length of 3µm and tip-diameter of 10nm. The field emission stability for both Fe and Cr can be improved after a 30min field emission aging.
2. Binary system with gold and nickel successfully inhibits the continuous film of carbon nanotubes formation. The density of CNTs can be reduced to the value of 3.3×107cm-2 by changing the composition and the heat treatment of the catalyst film. Field emission measurement shows a value close to the reported density of 2.5×107cm-2 and is possible for optimizing field emission efficiency for practical applications.
3. SiONWs could be grown on nickel/gold-coated silicon oxide substrates by rapid furnace annealing. Octopus-like structure of SiONWs could grow to tens of micrometers with diameters of tens of nanometers depending on the catalyst composition, amount and cooling rate.
4. Under critical conditions of nickel and gold film thicknesses of 15 and 8 nm and cooling rate of about 1.8℃/s, aligned SiONWs with unattached ends could be grown.
The growth of the SiONWs was proposed to be a unique head-growth SLS process accompanied by cell growth induced by constitutional supercooling.
5. Instead of CNTs, Cr can be used as a catalyst to grow chromium carbide capped carbon nanotips. These nanotips grow with good uniformity and show good alignment.
The results show that bias larger than 150V is necessary for the growth and helps the graphitization.
6. Field emission characteristics of carbon nanotips and chromium carbide capped carbon nanotips were investigated and showed a turn-on field of the bare carbon nanotips (1.4V/µm) lower than the chromium carbide capped carbon nanotips
(3.5V/µm). The bare carbon nanotips show poor stability while chromium carbide capped carbon nanotips reveal a much stable emission.
7. Growth of chromium carbide capped carbon nanotips in the gated structure is achieved.
Turn-on field (defined as the linear fit of F-N plot intercept the 1/V axis) is approximately 2.63V. The current of 10uA is achieved at 3.3V.
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