CHAPTER 4 CONCLUSION
4.1 Experiment conclusion
In this thesis, the oxidation condition of CuO thin film, 400oC 60min, was investigated that provide higher yield and endurance.
The operation voltages, including V
on and V
off, are both less than 3V and suggest that the devices are appropriate for the low voltage applications, and the resistive switching occur in small region. The formation/rupture of conductive filament is preferred to explain this nonpolarity switching behavior by current fitting and size effect result.
The resistive switching of CuO thin film is nonpolar switching with Ti, Pt, W-probe top electrode, however, the bipolar switching enhance IRS switching by using Ti top electrode. We notice that this observation is very similar to the case of NiO thin films by using inert metal electrode. Nevertheless, we also notice that the metal/CuO interface effect enhance bipolar switching by using Ti electrode
The mechanism of turn-off process is Joule heating to rupture filament in nonpolar switching. However, for bipolar switching with Ti top electrode, the oxygen migration also influence turn-off process.
The Ti/CuO/Pt structure has a potential for nonvolatile multiple-valued memory device by controlling current compliance and stop voltage.
4.2 Future work
The bottom electrode and CuO thin film interface should insert a buffer layer to resist Cu atom to diffuse into bottom electrode and reduce thermal stress at high temperature. This buffer layer can choose Ta/TaN stack structure.
In oxidation CuO film, the RTA or plasma oxidation is more easy control oxidation rate. On the other hand, the oxidation atmosphere can be modulation to studying oxygen partial pressures effect resistive switching. The Cu deposition rate also controlled for origin defect concentration.
In interface engineering, there are some manners to change the property of Ti/CuO interface. One is various Ti thickness or plasma treatment before deposition Ti top electrode. On the other hand, the electrode can be using TiN.
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