CHAPTER 3 RESULTS AND DISCUSSION
3.6 Multi-level application
The ON-state current is dependent on current compliance, but OFF-state current is not as show in Fig. 3.74. Thus, the multiple levels of the ON-state are only controlled by current compliance. On the other hand, the current of the OFF-state is dependent on stop voltage, but the current of the ON-state is not as show in Fig. 3.75.
Thus, the multiple levels of the OFF-state are only controlled by stop voltage.
The multiple levels of the ON-state have acceptable sensing margin by choosing suitable current compliance value. Fig. 3.76 shows stress characteristics of ON-state of multi-level with Ti/CuO/Pt structure.
In application, the Ti/CuO/Pt devices can series a transistor (1T-1R configuration). The transistor of the gate voltage can limit the ON-state current of the Ti/CuO/Pt devices, so that different gate voltage can create different ON-state multilevel. Contrary to the multiple levels of the ON-state, which is determined by current compliance, the stop voltage (Vstop) can also determine the multiple levels of OFF-state. By controlling the amplitude of the reset stop voltage pulse, another three intermediate resistance states between ON-state and OFF-state can be produced.
Figure 3.1. The frame of experimental results and discussion
Figure 3.2. The yield and endurance of oxidation condition.
Figure 3.3. XRD results of device with oxidation condition 400oC-60min, and 500oC-60min.
Figure 3.4. SIMS result of oxidation condition 400oC, 15min.
0 5 10 15 20 25 30 35
Figure 3.5. SIMS result of oxidation condition 400oC, 60min.
Figure 3.6. I-V curve of Ti/CuO/Pt structure in positive turnon and negative turn off switching mode.
Figure 3.7. I-V curve of Ti/CuO/Pt structure in negative turn on and positive turn off switching mode.
Figure3.8. I-V curve of Ti/CuO/Pt structure in negative turn on and negative turn off switching mode.
Figure 3.9. I-V curve of Ti/CuO/Pt structure in positive turn on and positive turn off switching mode.
Figure 3.10. I-V curve of Pt/CuO/Pt structure in positive turn on and negative turn off switching mode.
Figure 3.11. I-V curve of Ti/CuO/Pt structure in positive turn on and positive turn off switching mode.
Figure 3.12. I-V curve of Pt/CuO/Pt structure in negative turn on and positive turn off switching mode.
Figure 3.13. I-V curve of Pt/CuO/Pt structure in negative turn on and negative turn off switching mode.
Figure 3.14. I-V curve of W-probe/CuO/Pt structure in positive turn on and negative turn off switching mode.
Figure 3.15. I-V curve of W-probe/CuO/Pt structure in positive turn on and positive turn off switching mode.
Figure 3.16. I-V curve of W-probe/CuO/Pt structure in negative turn on and positive turn off switching mode.
Figure 3.17. I-V curve of W-probe/CuO/Pt structure in negative turn on and negative turn off switching mode.
Figure 3.18. I-V curve of W-probe/CuO/Pt structure and Ti/CuO/Pt structure.
Figure 3.19. Current fitting of Ohmic conduction in turn-on process at the positive bias region for Pt top electrode.
Figure 3.20. Current fitting of Ohmic conduction in turn off process at the negative bias region for Pt top electrode.
Figure 3.21. I-V curves were well fitted by the formula of Poole–Frenkel emission model with Pt top electrode.
Figure 3.22. Current fitting of Ohmic conduction in turn-on process at the positive bias region for Ti top electrode.
Figure 3.23. Current fitting of Ohmic conduction in turn off process at the negative bias region for Ti top electrode.
Figure 3.24. I-V curves were well fitted by the formula of Poole–Frenkel emission model with Ti top electrode.
Figure 3.25. The on/off ratio of various voltage bias.
Figure 3.26. I-V curve of Ti/CuO/Pt structure with top electrode area 10um*10um.
Figure 3.27. I-V curve of Ti/CuO/Pt structure with top electrode diameter 150um.
Figure 3.28. I-V curve of Ti/CuO/Pt structure with top electrode diameter 250um.
Figure 3.29. I-V curve of Ti/CuO/Pt structure with top electrode diameter 350um.
Figure 3.30. Statistics plot of ON-state and OFF-state current density at various area of top electrode.
Figure 3.31. I-V curves of the 50th, 250th, and 500th cycles switched.
Figure 3.32. Switching cycles for turn-on voltage and turn-off voltage.
Figure 3.33. Ti/CuO/Pt devices of switching cycles for resistance at 0.2V of ON-State and OFF-state.
Figure 3.34. Pt/CuO/Pt devices of switching cycles for resistance at 0.2V of ON-State and OFF-state.
Figure 3.35. W-probe/CuO/Pt devices of switching cycles for resistance at 0.2V of ON-State and OFF-state.
Figure 3.36. Plot of retention characteristics of ON and OFF-states.
Figure 3.37. Stress characteristics of ON and OFF-states under 0.2V with Ti top electrode.
Figure 3.38. Stress characteristics of ON and OFF-states under 0.2V with Pt top electrode.
Figure 3.39. Stress characteristics of ON and OFF-states under 0.2V with Ni top electrode.
Figure 3.40. I-V curve were measured with a current compliance 1mA.
Figure 3.41. I-V curve were measured with a current compliance 3mA.
Figure 3.42. I-V curve were measured with a current compliance 5mA.
Figure 3.43. I-V curve were measured with a current compliance 10mA.
Figure 3.44. I-V curve were measured with a current compliance 20mA.
Figure 3.45. I-V curve were measured with a current compliance 30mA.
Figure 3.46. I-V curve were measured with a current compliance 40mA.
Figure 3.47. I-V curve were measured with a current compliance 50mA.
Figure 3.48. Statistics plot of ON-current and OFF-current at -0.2V with
different current compliance.
Figure 3.49. Statistics plot of turn off voltage at with different current compliance.
Figure 3.50. Statistics plot of turn off current with different current compliance.
Figure 3.51. Statistics plot of turn off power at with different current compliance.
Figure 3.52. Turn off process with different temperature.
Figure 3.53. ON-state conductivity of measurement at various temperatures.
Figure 3.54. OFF-state conductivity of measurement at various temperatures.
Figure 3.55. Double log I-V curve of turn on process at RT and 150oC.
Figure 3.56. Double log I-V curve of turn off process at RT and 150oC.
Figure 3.57. Ti/CuO/Pt structure has bipolar switching and intermediate resistance state (IRS).
Figure 3.58. Ti/CuO/Pt device be set stop voltage at -0.75V and -2V in a switching cycle.
Figure 3.59. Ti/CuO/Pt device be set stop voltage at -0.8V and -2V in a switching cycle.
Figure 3.60. Ti/CuO/Pt device be set stop voltage at -1V and -2V in a switching cycle.
Figure 3.61. I-V curve of stop voltage be set at -0.8V.
Figure 3.62. I-V curve of stop voltage be set at -0.9V.
Figure 3.63. I-V curve of stop voltage be set at -0.1V.
Figure 3.64. I-V curve of stop voltage be set at -2V.
Figure 3.65. Statistics plot of current at -0.2V of ON-state and OFF-state with various stop voltage.
(a) (b) (c)
Figure 3.66. Mechanism of turn off process without transition region.
(a) (b) (c) (d) Figure 3.67. Mechanism of turn off process with transition region.
(a) (b)
Figure 3.68. Mechanism of turn off process with transition region different current compliance.
Figure 3.69. I-V curve in turn off process with current compliance 5mA.
Figure 3.70. I-V curve in turn off process with current compliance 10mA.
Figure 3.71. I-V curve in turn off process with current compliance 20mA.
Figure 3.72. I-V curve in turn off process with current compliance 30mA.
Figure 3.73. Stress characteristics of intermediate resistance state.
Figure 3.74. The detail resistive switching mode.
Figure 3.75. I-V curve of Ti/CuO/Pt device with different current compliance.
Figure 3.76. I-V curve of Ti/CuO/Pt device with different stop voltage.
Figure 3.77. Stress characteristics of ON-state of multi-level with Ti/CuO/Pt structure.
Figure 3.78. Stress characteristics of OFF-state of multi-level with Ti/CuO/Pt structure.
Chapter 4 Conclusion
4.1 Experiment conclusion
In this thesis, the oxidation condition of CuO thin film, 400oC 60min, was investigated that provide higher yield and endurance.
The operation voltages, including V
on and V
off, are both less than 3V and suggest that the devices are appropriate for the low voltage applications, and the resistive switching occur in small region. The formation/rupture of conductive filament is preferred to explain this nonpolarity switching behavior by current fitting and size effect result.
The resistive switching of CuO thin film is nonpolar switching with Ti, Pt, W-probe top electrode, however, the bipolar switching enhance IRS switching by using Ti top electrode. We notice that this observation is very similar to the case of NiO thin films by using inert metal electrode. Nevertheless, we also notice that the metal/CuO interface effect enhance bipolar switching by using Ti electrode
The mechanism of turn-off process is Joule heating to rupture filament in nonpolar switching. However, for bipolar switching with Ti top electrode, the oxygen migration also influence turn-off process.
The Ti/CuO/Pt structure has a potential for nonvolatile multiple-valued memory device by controlling current compliance and stop voltage.
4.2 Future work
The bottom electrode and CuO thin film interface should insert a buffer layer to resist Cu atom to diffuse into bottom electrode and reduce thermal stress at high temperature. This buffer layer can choose Ta/TaN stack structure.
In oxidation CuO film, the RTA or plasma oxidation is more easy control oxidation rate. On the other hand, the oxidation atmosphere can be modulation to studying oxygen partial pressures effect resistive switching. The Cu deposition rate also controlled for origin defect concentration.
In interface engineering, there are some manners to change the property of Ti/CuO interface. One is various Ti thickness or plasma treatment before deposition Ti top electrode. On the other hand, the electrode can be using TiN.
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