High boron doping device show better electrical characteristic and scaling potential, but it has longer overlap length. Therefore, we can design doping profile to avoid boron out-diffusion phenomenon especially for short channel length devices.
Besides, high activation with low thermal budget manufacture process is what we need. Therefore, the exactly boron dosage range and the lowest allowed activation temperature leading to double growth rate and large grain size are worthy to study.
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簡歷 (Vita)
姓名：張芳瑜 性別：女
出生日：1989 年 7 月 21 日 籍貫： 台灣 新北市
出生地： 台灣 台北市 學歷：
國立交通大學應用數學系 學士班 2007 年 9 月~2011 年 6 月
國立交通大學電子物理所 碩士班 2011 年 9 月~2013 年 7 月
碩士論文題目：
摻雜不同濃度的硼在金屬誘發結晶前對矽奈米晶 SONOS 記憶體的影響
Impacts of Boron Doping on MILC Growth of Si-NCs SONOS Memory and Device Property