Gated-mode PDE 量測結果與討論

由暗計數對死亡時間的量測得知，多長的死亡時間方避開 afterpulsing 之後，便可開 始進行光偵測率的量測。然而元件本身的偵測率不佳，加上計數會隨時間波動，因此為 了減低擾動影響光計數，我們提升入射光子數，並依不同元件計數受擾動的影響程度差

異，分別設定為平均每十個脈衝有一個及三個光子數，藉由入射光子數的提升，擴大光

0.1 0.2 0.3 0.4 0.5 0.6 0.7

vertical SPAD

vertical SPAD with grating

PDE (%)

Excess bias (V)

1.00E-014

vertical SPAD

PDE (%)

Excess bias (V)

4.80E-014

圖 4-19 為側向式單光子偵測器在 400 nm 的暗計數及光計數實際量測數據，從中可

第五章、 結論與未來展望

為了利用標準製程上與電路整合的優勢，我們利用 Sentaurus TCAD 元件模擬軟體 輔助設計出側向式單光子偵測器元件結構 ，了解元件操作在崩潰電壓之上時，有 geiger-mode 與 gated-mode 兩種不同操作模式的電路搭配，不同的操作模式可針對元件 特性，選擇適當的操作模式。 無法達到低暗計數的單光子偵測器的目標，也使得在 passive-quenching 量測下，無法將 元間恢復至額定的超額偏壓，而無法準確的量測元件在該超額偏壓的特性，因此利用 gated-mode 操作來改善 passive-quenching 下的缺點，得出垂直式 SPAD 在 400 nm，超額 偏壓 0.4 V 下，元件對 400 nm 的光子最敏感，此時偵測率為 9 %，雜訊等效功率為

避開 STI 對暗計數的影響，可以在短波長的偵測上有比垂直式單光子偵測器更高的敏感 度。

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簡歷(vita)

姓名： 李政儒 (Zheng-Ru Lee) 性別： 男

出生年月日：民國75年09月22日 籍貫：台灣省宜蘭縣

學歷：

國立宜蘭高級中學 (2002.9 – 2005.6) 國立中興大學電機工程系學士 (2005.9 – 2009.6) 國立交通大學電子工程系碩士 (2009.9 – 2011.8) 碩士論文題目：

垂直式與側向式單光子崩潰二極體特性

Characteristic of Single-Photon Avalanche Diode with Vertical and Lateral Structures