• 沒有找到結果。

CHAPTER 4 EXPERIMENTAL RESULTS

4.4 SUMMARY

Table 4.7 shows the summary of the chip for instrument measurement. There are six MOSFET transistors in single pixel circuit. The power dissipation is 14.8uW under the illumination of 736 lux.

(a)

(b)

(c)

(d)

Fig. 4.1 (a) The photograph of the basic cell in the 2-D array, (b) the photodiode in single pixel, (c) solar cells as power supply in the chip for implantation and (d) the photograph of the whole implantation chip.

(a)

Fig. 4.2 (a)The photograph of the whole implantation chip and (b) the decoder

(a)

(b)

Fig. 4.3 (a) The measurement setup chart. (b)The cross-sectional drawing of the setup for the chip.

(a)

(b)

Fig. 4.4 The power (a) and the luminance (b) of the light on the chip versus different input light power under this setup condition.

0.000

Light source

strength(W) 30 60 90 120

Corresponding

luminance (lux) 95 736 2010 3460

Table 4.1 The luminance of the light on the chip under different light source strength.

Fig. 4.5 The I-V characteristics of the solar cell in the chip for instrument measurement. The solar area is 1120umx490um.

(a)

(b)

Fig. 4.6 The open circuit voltage(a) and the short circuit current (b) of the solar cell in the chip for instrument measurement.

Open Circuit Voltage

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

30 60 90 120

Light source strength

Voltage(V)

Fig. 4.7 The flash light reaction of the solar cell in the chip for instrument measurement. The light source is yellow LED with light intensity of 212lux.

Spectral response

0 0. 05 0. 1 0. 15 0. 2 0. 25 0. 3 0. 35 0. 4 0. 45 0. 5

400 450 500 550 600 650 700

Wavelength (nm)

A/W

Fig. 4.8 The spectrum analysis of photodiode under visible light.

Fig. 4.9 The photograph of the chip for instrument measurement with opaque material shielding from light to form the light and dark boundary.

(a)

(b)

Fig. 4.10 The post-simulated waveform and the measured waveform under light intensity of 736 lux and smooth voltage of 0.9 volt (a), and under light intensity of 3460 lux and smooth voltage of 1 volt.

Table 4.2 The post-simulation condition and measurement condition for Fig. 4.10 (a).

Table 4.3 The post-simulation condition and measurement condition for Fig. 4.10 (b).

Fig. 4.11 The measured waveform of the 2-D array under light intensity of 3460 lux and smooth voltage of 1 volt.

Fig. 4.12 The response of the chip under flashlight. The flashlight intensity is 3460 lux and the smooth voltage is 1 volt.

Fig. 4.13 The measured waveform of the chip for instrument measurement. The light intensity is 3460 lux while the smooth voltage is 1 volt.

Table 4.4 The post-simulation condition and measurement condition for Fig. 4.13.

Table 4.5 The required solar cell area under different illumination but fixed photocurrent of photodiode.

Table 4.6 The required solar cell area consideration the focusing of the lens.

Fig. 4.14 Typical diffraction and slit interference pattern.

Original response Smoothing function

Fig. 4.15 The reason why the positive and negative peaks are not the same.

Table 4.7 The summary of the chip for instrument measurement.

CHAPTER 5

CONCLUSIONS AND FURTHER WORKS

5.1 MAIN RESULTS OF THIS THESIS

In this thesis, two Pseudo-BJT-based silicon retina have been designed and fabricated in a 0.35um double-poly-four-level-metal N-well CMOS technology: one is for implantation; the other is for instrument measurement. The I-V characteristics of solar cell are measured and the results proved the possibility of using solar cell as power supply of implantable artificial retina. The functions of the chip for the instrument measurement are verified by using dc power supply and solar cells. This chip operates the functions of photoreceptors, horizontal cells and bipolar cells. The power dissipation of the chip for instrument measurement is 14.8uW under light intensity of 736 lux. The solar cell area can be reduced to 399920um2 if we increase the light intensity to 5780 lux.

5.1 FURTHER WORKS

In the proposed implantable Pseudo-BJT-based silicon retina, a solution of power supply in artificial retinal prosthesis, using solar cell as power supply, has been proposed. It is compatible with standard CMOS technology. However, the solar cell area occupied large area that reduces the resolution of the artificial retina. Solar cells with higher efficiency are required.

The proposed implantable Pseudo-BJT-based silicon retina replaces the retinal cells, including photoreceptor, horizontal cell, and bipolar cell. It performs image smoothing and edge extraction functions. It breaks the function limitation of current sub-retinal prosthesis. However, there are still some retinal cells not included in this artificial retina. The stimulus signal generated by the proposed artificial retina is monophase while the optic nerve receives the biphasic stimulus. Besides, developing a silicon retina that can process color images is also essential. These will be done in the future. These will be done in the future.

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簡歷 姓名:鄭淑珍

性別:女

出生日期:民國 70 年 9 月 20 日 出生地:新竹縣

學歷:國立交通大學電子工程學系畢業 (88 年 9 月-92 年 2 月) 國立交通大學電子研究所碩士班 (92 年 2 月入學)

論文名稱:

有太陽能電池之仿雙載子電晶體為基礎低功率可植入式矽視網膜晶 片設計

The Design of Low Power Implantable Pseudo-BJT-Based Silicon

Retina with Solar Cells for Artificial Retinal Prostheses

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