Chapter 5 Conclusions and future work
5.2 Future works
5.2.2 Fabrication of poly-Si thin film solar cell by using CF-MIC
Thin film crystalline Si solar cells have been prepared by MIC method, which performed MIC on three layer types in the solar cell structure including p-i-n, i-n and n layer [102].
However, the results showed that p-i-n prepared by MIC presented the lowest effective, opposite only n-layer prepared by MIC presented the most effective. The results indicate that the solar cell fabricated by MIC is unsuitable. In ideal, MIC poly-Si films have a potential to apply to solar cell because the orientation of needle-like MIC grain is benefit for free carrier transportation. Thus the degradation might due to high Ni contaminations trapped the generated electron-hole pairs. Our proposed CF-MIC method can effectively reduce Ni residues in MIC films and improve the electrical properties of MIC TFTs. Hence, the proposed method can be a candidate to solve this issue.
References
[1] H. Gleskova, S. Wagner, V. Gasparik, and P. Kovac, “150°C Amorphous silicon thin-film transistor technology for polyimide substrates,” J. Electrochem. Soc., 148, G370-G374 (2001).
[2] K. Long, A. Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, and J. C. Sturm,
“Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250°C to 280°C,” IEEE Electron Device Lett., 27, 111-113 (2006).
[3] S.W. Depp, A. Juliana, and B. G. Huth, “Polysilicon FET devices for large area input/oput applications,” Proc. IEMD, 26, 703-706 (1980).
[4] T. Yamanaka, T. Hashimoto, N. Hasegawa, T. Tanaka, N. Hashimoto, A. Shimizu, N.
Ohki, K. Ishibashi, K. Sasaki, T. Nishida, T. Mine, E. Takeda, and T. Nagano,
“Advanced TFT SRAM cell technology using a phase-shift lithography,” IEEE Trans.
Electron Devices, 42, 1305-1313 (1995).
[5] T. Kaneko, Y. Hosokawa, M. Tadauchi, Y. Kita, and H. Andoh, “400 dpi integrated contact type linear image sensors with poly-Si TFT’s analog readout circuits and dynamic shift registers,” IEEE Trans. Electron Devices, 38, 1086-1039 (1991).
[6] Y. Hayashi, H. Hayashi, M. Negishi, T. Matsushita, “A thermal printer head with CMOS thin-film transistors and heating elements integrated on a chip,” IEEE
Solid-State Circuits Conference (ISSCC), 266 (1998).
[7] M. Matsuo, T. Hashizume, S. Inoue, M. Miyasaka, S. Takenake. I. Yudasaka, and H.
Oshima, “1.3-in. full-color VGA poly-Si TFT-LCDs with completely integrated drivers,” SID Symposium Dig., XXV, 87-90 (1994).
[8] S. Inue, M. Matsuo, K. Kitawada, S. Takenaka, S. Higashi, T. Ozawa, Y. Matsueda, T.
Nakazawa, and H. Oshima, “425°C poly-Si TFT technology and its applications to large-size LCDs and integrated digital data drivers,” Proceedings of the 15th IDRC, 339-342 (1995).
[9] I-W Wu, “Celldesign considerations for high aperature ratio direct view and projection polysilicon TFT-LCD,” in SID Tech. Dig., 19-21 (1995).
[10] A. Mimura, N. Konishi, K. Ono, J. I. Ohwada, Y. Hosokawa, Y.A. Ono, T. Suzuki, K.
Miyita, and H. Kawakami, “High-performance low-tmeperature poly-Si n-channel TFTs for LCD,” IEEE Trans. Electron Dev., 36, 351-359 (1989).
[11] V. Subramanian, P. Dankoski, L. Degertekin, B. T. Khuri-Yakub, and K. C. Saraswat,
“Controlled two-step solid-phase crystallization for high-performance polysilicon TFTs,” IEEE Electron Device Lett., 18, 378-381 (1997).
[12] A.T. Voutsas and M. K. Hatalis, “Deposition and crystallization of amorphous Si low-pressure chemical vapor depposited films obtained by low-temperature pyrolysis of disiland,” J. Electrochem. Soc., 140, 871-877 (1993).
[13] A.T. Voutsas and M. K. Hatalis, “Structural characteristics of as deposited and crystallized mixed-phase silicon films,” J. Electron. Mat., 23, 319-330 (1994).
[14] J. S. Im, H. J. Kim, and M. O. Thompson, “Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films,” Appl. Phys. Lett., 63, 1969-1971 (1993).
[15] M. A. Crowder. Ph.D. Dissertation, Columbia University 2001.
[16] J.S. Im, and H. J. Kim, “On the superlateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films,” Appl. Phys. Lett., 64, 2303-2305 (1994).
[17] N. A. Hastas, C. A. Dimitriadis and G. Kamarinos, “Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors,“ J. Appl. Phys., 92,.
4741-4745 (2002).
[18] R. S. Wagner, and W. C. Ellis, “Vapor-liquid-solid mechanism of single crystal growth,” Appl. Phys. Lett., 4, 89-90 (1964).
[19] M. S. Haque, H. A. Naseem, and W. D. Brown, “Aluminum-induced crystallization and counter-doping of phosphorous-doped hydrogenated amorphous silicon at low temperatures,” J. Appl. Phys., 79, 7529-7536 (1996).
[20] L. Hultman, A. Robertsson, H. T. G. Hentzell, I. Engström, and P. A. Psaras,
“Crystallization of amorphous silicon during thin-film gold reaction,” J. Appl. Phys., 62, 3647-3655 (1987).
[21] S. F. Gong, H. T. G. Hentzell, and A. E. Robertsson, “Initial solid-state reactions between Sb and amorphous Si thin films,” J. Appl. Phys., 64, 1457-1463 (1988).
[22] S. Y. Yoon, K. H. Kim, C. O. Kim, J. Y. Oh, and J. Jang, “Low temperature metal induced crystallization of amorphous silicon using a Ni solution,” J. Appl. Phys., 82, 5865-5867 (1997).
[23] Z. Jin, G. A. Bhat, M. Yeung, H. S. Kwok, and M. Wong, “Nickel induced crystallization of amorphous silicon thin films,” J. Appl. Phys., 84, 194-200 (1998).
[24] E. A. Guliants, W. A. Anderson, L. P. Guo, V. V. Guliants, “Transmission electron microscopy study of Ni silicides formed during metal-induced silicon growth,” Thin
Solid Films, 385, 74-80 (2001).
[25] C. Hayzelden, and J. L. Batstone, “Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films,” J. Appl. Phys., 73, 8279-8289 (1993).
[26] S.-W. Lee, Y.-C. Jeon, and S.-K. Joo, “Pd induced lateral crystallization of amorphous Si thin films,” Appl. Phys. Lett., 66, 1671-1673 (1995).
[27] S.-W. Lee, B.-I. Lee, T.-K. Kim, and S.-K. Joo, “Pd2Si-assisted crystallization of amorphous silicon thin films at low temperature,” J. Appl. Phys., 85, 7180-7184 (1999).
[28] J.L. Batstone, and C. Hayzelden, “Microscopic processes in crystallization,” Solid State
Phenom., 37-38, 257-268 (1994).
[29] C. R. M. Grovenor, Microelectronic Materials, p. 224, Adam Hilger, Bristol (1989).
[30] K. N. Tu, and J. W. Mayer, in Thin films: interdiffusion and reactions, edited by J. M.
Poate, K. N. Tu, and J. W. Mayer, p. 359, John Wiley & Sons, New York (1978).
[31] Y. Kuo, Thin film transistors: materials and processes, volume 2: polycrystalline
silicon thin film transistors, p. 236, Springer, New York (2003).
[32] A. Y. Kuznetsov, and B. G. Svensson, “Nickel atomic diffusion in amorphous silicon,”
Appl. Phys. Lett., 66, 2229-2231 (1995).
[33] T. I. Kamins, “Hall mobility in chemically deposited polycrystalline silicon,” J. Appl.
Phys. 42, 4357-4365 (1971).
[34] J. Y. W. Seto, “The electrical properties of polycrystalline silicon films,” J. Appl. Phys.
46, 5247-5254 (1975).
[35] D ballutaud, M Aucouturier, and F Bobonneau, “Electron spin resonance study of hydrogenation effects in polycrystalline silicon,” J. Appl. Phys. 57, 1408-1410 (1985).
[36] S D S Malhi, H Shichijo, S K Banerjee, R Sundaresan, M Elahy, G P Pollack, W F Richardson, A H Shah, L R Hite, R H Womack, P K Chatterjee, and H W Lam,
“Characteristics and three dimensional integration of MOSFETs in small grain LPCVD polycrystalline silicon,” IEEE Trans. Electron Devices, 32, 258-281 (1985).
[37] G. A. Bhat, H. S. Kwok, and M. Wong, “Behavior of the drain leakage current in metal-induced laterally crystallization thin film transistors.” Solid-State Electronics,. 44, 1321-1324 (2000).
[38] M. Wong, Z. Jin, G. A. Bhat, P. C. Wong, and H. S. Kwok, “Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors.”
IEEE Trans. Electron Device, 47, 1061-1067 (2000).
[39] G. Bhat, H. Kwok, and M. Wong, “Plasma hydrogenation of metal-induced laterally crystallized thin film transistors.” IEEE Electron Device Lett., 21, 73-75 (2000).
[40] G. A. Bhat, Z. Jin, H. S. Kwok, and M. Wong, “Effects of longitudinal grain boundaries on the performance of MILC-TFT’s.” IEEE Electron Device Lett., 20, 97-99 (1999).
[41] T- K Kim, G- B Kim, B-I Lee, and S-K Joo, ”The effects of electrical stress and temperature on the properties of polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization.” IEEE Electron Device Lett., 21, 347-349 (2000).
[42] C-F Yeh, T-Z Yang, C-L Chen, T-J Chen, and Y-C Yang, “Experimental comparison of off-state current between high-temperature and low-temperature-processed undoped channel polysilicon thin-film-transistors.” Jpn. J. Appl. Phys., 32, 4472-4478 (1993).
[43] M. Yazaki, S. Takenaka, and H. Ohshima, “Conduction mechanism of leakage current observed in metal-oxide-semiconductor transistors and poly-Si thin film transistors.”
Jpn. J. Appl. Phys., 31, 206-209 (1992).
[44] K. R. Olasupo, and M. K. Hatalis, “Leakage current mechanism in sub-micro polysilicon thin film transistors.” IEEE Trans. Electron Device, 43, 1218-1223 (1996).
[45] K. Graff, in “Metal impurities in silicon-device fabrication” Springer, New York, pp.14-18 (1995).
[46] M. Zhang, X. Zeng, P. K. Chu, R. Scholz, and C. Lin, “Nickel precipitation at nanocavities in separation by implantation of oxygen.” J. Vac. Sci. Technol. A, 18, 2249-2253 (2000).
[47] S. Morozumi, K. Oguchi, S. Yazawa, T. Kodaira, H. Ohshima, and T. Mano, “B/W and color LC video display addressed by poly-Si TFTs,” SID Dig., p.156 (1983).
[48] M. Stewart, R. S. Howell, L. Pires, and M. K. Hatalis, “Polysilicon TFT technology for active matrix OLED displays,” IEEE Trans. Electron Devices, 48, 845-851 (2001).
[49] T. J. King and K. C. Sarawat, “Low-temperature (<550°C) fabrication of poly-Si thin-film transistors,” IEEE Trans. Electron Devices, 13, 309-311 (1992).
[50] L. Pereira, H. Aguas, R. M. S. Martins, P. Vilarinho, E. Fortunato and R. Martins,
“Polycrystalline silicon obtained by metal induced crystallization using different metals,” Thin Solid Films, 451-452, 334-339 (2004).
[51] S. Y. Yoon, S. J. Park, K. H. Kim and J. Jang, “Structural and electrical properties of polycrystalline silicon produced by low-temperature Ni silicide mediated crystallization of the amorphous phase,” J. Appl. Phys., 87, 609-611 (2000).
[52] G. A. Bhat, H. S. Kwok and M. Wong, “Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors,” Solid State Electron., 44, 1321, (2000).
[53] D. Murley, N. Young, M. Trainor and D. McCulloch, “An investigation of laser annealed and metal-induced crystallized polycrystalline silicon thin-film transistors,”
IEEE Trans. Electron. Dev., 48, 1145-1151 (2001).
[54] C. M. Hu, Y. C. Sermon Wu and C. C. Lin, “Improve the electrical properties of NILC poly-Si films using a gettering substrate,” IEEE Electron Device Lett., 28, 1000-1003 (2007).
[55] W. S. Sohn, J. H. Choi, K. H.Kim, J.H. Oh, S. S. Kim and Jin Jang, “Crystalline orientation of polycrystalline silicon with disk-like grains produced by silicide-mediated crystallization of amorphous silicon,” J. Appl. Phys., 94, 4326-4331 (2003).
[56] J. H. Choi, J. H. Cheon, S. K. Kim and J. Jang, “Giant-grain silicon (GGS) and its application to stable thin-film transistor,” Displays, 26, 137-142 (2005).
[57] S. Petitdidier, V Bertagna, N. Rochat, D. Rouchon, P. Besson, R. Erre and M. Chemla,
“Growth mechanism and characterization of chemical oxide films produced in peroxide mixtures on Si(100) surfaces,” Thin Solid Films, 476, 51-58 (2005).
[58] G. B. Smith, D. R. McKenzie and P. J. Martin, “An XPS study of chemical order in hydrogenated amorphous silicon-carbon alloy films,” Phys. Stat. sol., 152, 475-480 (1989).
[59] T. P. Nguyen and S. Lefrant, “XPS study of SiO thin films and SiO-metal interfaces,” J.
Phys.: Condens. Matter.,1, 5197-5204 (1989).
[60] A. Toneva, T. Marinova and V. Krastev, “XPS investigation of a-Si:H thon films after light soaking,” J. Lumines., 80, 455-459 (1999)
[61] A. Y. Kuznetsov and B. G. Svensson, “Nickel atomic diffusion in amorphous silicon,”
Appl. Phys. Lett., 66, 2229-2231(1995).
[62] R. N. Ghoshtagore, “Diffusion of nickel in amorphous silicon dioxide and silicon nitride films ,” J. Appl. Phys., 40, 4374-4376 (1969).
[63] C. P. Chang and Y. C. Sermon Wu, “Improved electrical performance of MILC poly-Si TFTs using CF4 plasma by etching surface of channel,” IEEE Electron Device Lett., 30, 130-132 (2009).
[64] M. Yazaki, S. Takenaka and H. Ohshima, “Conduction mechanism of leakage current observed in metal-oxide-semiconductor transistors and poly-Si thin-film transistors,”
Jpn. J. Appl. Phys., 31, 206-209 (1992).
[65] K. R. Olasupo and M. K. Hatalis, “Leakage current mechanism in sub-micron polysilicon thin-film transistors,” IEEE Trans. Electron Devices, 43, 1218-1223 (1996).
[66] Y. Minagawa, Y. Yazawa and S. Muramatsu, “Fabrication of (111)-oriented Si film with a Ni Ti layer by MIC,” Jpn. J. Appl. Phys. 40, L186-L188 (2001).
[67] M.H. Lai, Y.C.Sermon Wu and C.P. Chang, “Electrical performance and thermal stability of MIC poly-Si TFTs improved using drive-in nickel induced crystallization,”
Mater. Chem. Phys. 126, 69-72 (2011).
[68] S. Luan and G. W. Neudeck, “An experimental study of the sourcedrain parasitic resistance effects in amorphous silicon thin film transistors,” J. Appl. Phys., 72, 766-772 (1992).
[69] K. Chan, E. Bunte, D. Knipp and H. Stiebig, “Microcrystalline silicon TFT forlarger area electronic applications,” Semicond. Sci. Technol., 22, 1213-1219 (2007)
[70] C. Y. Chen and J. Kanicki, “Origin of series resistances in a-Si:H TFTs,” Solid State
Electron., 42, 705-713 (1998).
[71] I. W. Wu, W. B. Jackson, T.Y. Huang, A. Lewis and A. Chiang, “Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressing,” IEEE
Electron Device Lett. 11, 167-170 (1990).
[72] F. V. Farmakis, C. A. Dimitriadis, J. Brini, G. Kamarinos and T. E. Ivanov,
“Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs),” Solid State Electron. 43, 1259-1266 (1999).
[73] J. H. Kim, J. H. Choi, C. W. Kim and J. H. Souk, “Photo and thermal stability of chlorine doped amorphous silicon TFTs,” Mat. Res. Soc. Symp. Proc. 471, 161-165 (1997).
[74] C. J. Ku, Z. Duan, P. I. Reyes, Y. Lu, Y. Xu, C. L. Hsueh and E. Garfunkel, “Effects of Mg on the electrical characteristics and thermal stability of MgZn1O thin film transistors,” Appl. Phys. Lett. 98, 123511 (2011).
[75] D. K. Schroder, Semiconductor Material and Device Characterization. New York, NY:
John Wiley & Sons, Inc., 2nd ed., (1998).
[76] C. H. Kim, J. H. Jeon, J. S. Yoo, K. C. Park and M. K. Han, “Excimer-laser-induced in-situ fluorine passivation effects on polycrystalline silicon thin film transistors,” Jpn.
J. Appl. Phys., 38, 2247-2250 (1999).
[77] J. W. Park, B. T. Ahn and K. Lee, “Effects of F+ implantation on the characteristics of poly-Si films and low-temperature n-ch poly-Si thin-film transistors,” Jpn. J. Appl.
Phys., 34, 1436-1441 (1995).
[78] S. D. Wang, W. H. Lo, and T. F. Lei, “CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs,” J. Electrochem.
Soc., 152, G703-G706 (2005).
[79] C. H. Kim, K..S. Sohn and J. Jang, “Temperature dependent leakage currents in polycrystalline silicon thin film transistors,” J. Appl. Phys., 81, 8084-8090 (1997).
[80] W. P. Maszara and G. A. Rozonyi, “Kinetics of damage production in silicon during self implantation,” J. Appl. Phys., 60, 2310-2315 (1986).
[81] S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd Edition, p. 23
[82] J. Levinson, G. Este, M. Rider, P. J. Scanlon, F. R. Shepherd, and W. D. Westwood,
“Conductivity behavior in polycrystalline semiconductor thin film transistors,” J. Appl.
Phys., 53, 1193-1202 (1982).
[83] R. E. Proano, R. S. Misage, and D. G. Ast, “Development and electrical properties of undoped polycrystalline silicon thin-film transistors,” IEEE Tarns. Electron Devices,
36, 1915-1922 (1989).
[84] M. Hack, A. G. Lewis, and I. W. Wu, “Physical models for degradation effects in polysilicon thin-film transistors,” IEEE Trans. Electron. Dev. 40, 890-897 (1993).
[85] Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura and Y. Tsuchihashi, “Hot carrier effects in low-temperature polysilicon thin-film transistors,” Jpn. J. Appl. Phys. 40, 2833-2836 (2001).
[86] A. T. Hatzopoulos, D. H. Tassis, N. A. Hastas, C. A. Dimitriadis and G. Kamarinos,
“An analytical hot-carrier induced degradation model in polysilicon TFTs,” IEEE
Tarns. Electron Devices 52, 2182-2187 (2005).
[87] Y. Lee, S. Bae and S. J. Fonash, “High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs,” IEEE Electron Device Lett. 26, 900-902 (2005).
[88] B. S. Lim, A. Rahtu, and R. G. Gordon, “Atomic layer deposition of transition metals,”
Nat. Mater., 2, 749-754 (2003).
[89] B. M. Wang and Y. C. Sermon Wu, “Gettering of Ni from NILC Si using a-Si and chem-SiO2,” Electrochem. Solid-State Lett., 12, J14-J16 (2009).
[90] C. F. Yeh, T. J. Chen, C. Liu, J. T. Gudmundsson, and M. A. Lieberman,
“Hydrogenation of polysilicon thin-film transistor in a planar inductive H2/Ar discharge,” IEEE Electron Device Lett., 20, 223-225 (1999).
[91] H. C. Cheng, F. S. Wang, and C. Y. Huang, “Effects of NH3 plasma passivation on N-channel polycrystalline silicon thin-film transistors,” IEEE Trans. Electron Devices,
44, 64-68 (1997).
[92] W. Wu, W. B. Jackson, T. Y. Huang, A. G. Lewis, and A. Ciang, “Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation,” IEEE Electron
Device Lett., 12, 181-183 (1991).
[93] C. P. Chang and Y. C. Sermon Wu, “Improved electrical characteristics and reliability of MILC poly-Si TFTs using flourine ion implantation,” IEEE Electron. Dev. Lett., 28, 990-992 (2007).
[94] H. N. Chern, C. L. Lee and T. F. Lei, “The effects of fluorine passivation on polysilicon thin-film transistors,” IEEE Trans. Electron. Dev., 41, 698-702 (1994).
[95] C. A. Dimitriadis, P. A. Coxon, L. Dozsa, L. Papadimitriou and N. Economou,
“Performance of thin-film transistors on polysilicon films grown by low-pressure chemical vapor deposition at various pressures,” IEEE Trans. Electron Devices, 39, 598-606 (1992).
[96] Handbook of Chemistry and Physics 90th edition, section 9, p.64
[97] S. Banerjee, R. Sundraesan, H. Shichijo, and S. Malhi, “Hot-electron degradation of n-channel polysilicon MOSFETs,” IEEE Trans. Electron. Dev., 35, 152-157 (1988).
[98] C. H. Tu, T. C. Chang, P. T. Liu, H. W. Zan, Y. H. Tai, C. Y. Yang, Y. C. Wu, H. C.
Liu, W. R. Chen, and C. Y. Chang, “Enhanced performance of poly-Si thin film transistors using fluorine ions implantation,” Electrochem. Solid-State Lett., 8, G246-G248 (2005).
[99] C. T. Angelis, C. A. Dimitriadis, I. Samaras, J. Brini, G. Kamarinos, V. K. Gueorguiev and Tz. E. Ivanov, “Study of leakage current in n-channel and p-channel polycrystalline silicon thin-film transistors by conduction and low frequency noise measurements,” J.
Appl. Phys., 82, 4095-4101 (1997).
[100] K. Kobayashi, H. Murai, T. Sakamoto, K. Baert, H. Tokioka, T. Sugawara, Y.
Masutani, H. Namizaki and M. Nunoshita, “A novel fabrication method for polycrystalline silicon thin-film transistors with a self-aligned lightly doped drain structure,” Jpn. J. Appl. Phys., 32, 469-473 (1993).
[101] L. Colalongo, M. Valdinoci and G. Baccarani, “Investigation on anomalous leakage currents in poly-TFT's including dynamic effects,” IEEE IEEE Trans. Electron Devices,
44, 2106-2112 (1997).
[102] S. I. Muramatsu, Y. Minagawa, F. Oka, T. Sasaki and Y. Yazawa., “Thin film c-Si solar cells prepared by metal-induced crystallization,” Sol. Energy Mater. Sol. Cells, 74, 275-281 (2002).
Vita
Ming-Hui Lai
Birth Date: November 19, 1982 Sex: Male Address:
No.21, Ln. 205, Sec. 6, Zhonghua Rd., Xiangshan Dist., Hsinchu City 300, Taiwan (R.O.C.)
Education:
National Chiao Tung University, Hsinchu, Taiwan
Ph.D. of Science in Materials Science and Engineering Sep. 2007 – Sep. 2011
Feng Chia University, Taichung, Taiwan
Master of Science in Materials Science and Engineering Sep. 2005 – Jul. 2007
Feng Chia University, Taichung, Taiwan
Bachelor of Science in Materials Science and Engineering Sep. 2001 – Jul. 2005
Specialty:
Major Field:
Materials Science & Semiconductor Device Physics / VLSI Microfabrication.
Ph.D.’s Thesis:
Improved performance and reliability of MIC LTPS-TFTs using simply chemical oxide and drive-in nickel induced crystallization
Publication list
Journal Paper:
1. Ming-Hui Lai, YewChung Sermon Wu and Chih-Pang Chang, “Electrical performance and thermal stability of MIC Poly-Si TFTs improved using drive-in nickel induced crystallization,” Mater. Chem. Phys. 126 (2011) 69-72.
2. Ming-Hui Lai, YewChung Sermon Wu and Chih-Pang Chang, “Improved electrical performance and reliability of poly-Si TFTs fabricated by drive-in nickel-induced crystallization with chemical oxide layer,” J. Elect. Mater. 40 (2011) 1470-1475.
3. Ming-Hui Lai and YewChung Sermon Wu, “Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer,” Solid-State Electron. 64 (2011) 6-9.
4. Ming-Hui Lai, YewChung Sermon Wu and Jung-Jie Huang, “Effect of nickel concentration on source/drain series resistance of MIC-TFT,” submitted to Solid State Commun..
5. Ming-Hui Lai, YewChung Sermon Wu and Jung-Jie Huang, “Effect of nickel concentration on bias reliability and thermal stability of MIC-TFT,” submitted to Jpn. J.
Appl. Phys..
Conference Paper:
1. Ming-Hui Lai, YewChung Sermon Wu, Teng-Fu Tung and Hung-Yu Wu, “Improved performance of MIC poly-Si TFTs using driven-in nickel induced crystallization (DIC) with cap SiO2 by F implantation,” 217th ECS Meeting, Vancouver, Canada, April 25-30, (2010).
2. Ming-Hui Lai, YewChung Sermon Wu, Meiyi Li, Hung-Yu Wu and Teng-Fu Tung,
“Improving electrical performance of MIC poly-Si TFTs using drive-in nickel induced crystallization,” Symposium On Nano Device Technology (SNDT), Hsinchu, Taiwan, May 4-5 (2010)
3. Ming-Hui Lai and YewChung Sermon Wu, “Reducing Ni residues of metal induced crystallization poly-Si with a simple chemical oxide layer,” 218th ECS Meeting, Las Vegas, NV, USA, October 10-15 (2010).
4. Ming-Hui Lai, YewChung Sermon Wu, Jung-Jie Huang, Guang-Li Luo, Meiyi Li and Hung-Yu Wu, “Reducing source/drain contact resistance of MIC-TFT using chemical oxide layer,” Symposium On Nano Device Technology (SNDT), Hsinchu, Taiwan, April 21-22 (2011).