Chapter 5 Conclusions and Future Prospects
5.2 Future Prospects
In this work, we investigate the 10-nm La2O3 MIM capacitors with an 11.4-fF/μm2 capacitance density and an area of 2500-μm2 (50 μm × 50 μm). As stated in chapters 2 and 3, the scale factor αC and the Weibull slope βC extracted from the Weibull distribution of TDDB could be used to predict the lifetime distribution for various capacitor areas. However, the time-dependent soft breakdown process of the high-k La2O3 MIM capacitors is different from the traditional SiO2 related device. Hence, the “Weibull area scaling” principle as noted in Eq.
3-13 should be further verified by studying the 10-nm La2O3 MIM capacitors with various
areas. Moreover, the evolutions of J-V and C-V curves after SBD are essential to study, too.
On the other hand, the La2O3 MIM capacitor has been proved by low frequency measurement in this thesis that it is suitable for analog applications. Therefore, the characteristics of La2O3 MIM capacitors at radio frequency (RF) region could be further demonstrated. When circuits or devices work at high frequencies, many parasitic effects will occur, and it is hard to obtain the accurate electrical properties of a device. As a result, using the scattering (S) parameters is the most appropriate way to characterize high-frequency performance. For S parameters measurement in RF regime, La2O3 MIM capacitors with ground-signal-ground (GSG) configuration should be adopted, and the dummy device should also be fabricated at the same time for calibration.
Traps creation
Fig. 5-1. The wear out to final breakdown evolution of the La2O3 MIM capacitors under the constant voltage stress.
Table 5-1. Some recommendations for improving VCC and TCC without reducing the capacitance density. (2) Plasma treatment on electrode surface:
decreasing surface roughness and interface states
(3) Eliminating the IL
(1) Sufficient annealing for dielectrics (2) Plasma treatment on electrode surface (3) Adequate doping for dielectrics
(4) Eliminating the IL
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