Measurements and Conclusions

The following figures 28~33 are the measurement results which are only slightly different form our simulation, which imply good accuracy of our simulation and good circuit design. The some of the bandwidth compression showing in figure 28 maybe due to the underestimate of the load resistor parasitic.

0 2 4 6 8 10 12 14 16 Figure 28 Measured power gain.

0 1 2 3 4 5 6 7 8 9 10 0

5 10 15 20

NOise Figure (dB)

Frequencies Figure 29 Measured noise figure.

0 2 4 6 8 10 12 14 16

-20 -15 -10 -5 0

S11 S-parameters (dB) S22

Frequencies Figure 30 Measured S11 and S22.

0 2 4 6 8 10 12 14 16 -50

-40 -30 -20 -10 0

S12

S-parameters (dB)

Frequencies Figure 31 Measured S12.

-30 -25 -20 -15 -10 -5 0

-80 -70 -60 -50 -40 -30 -20 -10 0 10

OP1 Output Power (dB) OP3

Input Power (dB) Figure 32 Measured linearity.

Figure 33 Measured results summary.

The bandwidth of this work with considering matching and power gain is from 3 to 8 GHz, while the average power gain is about 8dB which can be up to 14 dB without the current buffer in real cases. The noise performance is good and the minimum noise figure is only 3.5dB at 3~4GHz. The noise figure can be even better if we solve the bandwidth compression problem from the resistor parasitic. Input and output matching are achieved well in band and the linearity of this work is excellent.

Total power consumption is 27mW, while the core LNA consumes only 15mW by 1.8V power supply. By the new input matching approach we proposed, a low noise, broadband, low power consumption and good-linearity amplifier is developed for the UWB system applications.

+2

Figure 34 Die photo.

Figure 35 Comparison of broadband LNA performance.

0.18μm 2004

V. Summary

Let us summary the conclusions of this paper briefly.

Noise modeling: The low noise amplifier in a RF receiver is a significant component, since it plays an important role in the noise performance of a RF system, which affects the dynamic range and the signal to noise ratio of this system. The current noise model with BSIM3v3 core can not model the noise behavior correctly. In order to develop the accurate noise model of RF MOSFETs, we have developed a new microstrip line design to measure NFmin accurately without the need for complicated de-embedding. Based on the accurate NFmin measurement and analytical NFmin equation, close agreements to the measurements with modeling data are all obtained that is important for further circuit application.

UWB LNA: By the new input matching approach we proposed, a low noise, broadband, low power consumption and good-linearity amplifier is developed for the future UWB system applications. The advantages of this design include extending the famous source L-degenerate matching to broadband, low noise, low power consumption, reducing inductor numbers and excellent linearity. All the advantages are important for UWB system considerations.

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學經歷

姓名：賴照民 性別：男

出生年月日：民國七十年四月一日 籍貫：台北市

學歷：台北市立建國高中 (85 年 9 月~88 年 6 月)

國立交通大學電子工程學系 (88 年 9 月~92 年 6 月)

國立交通大學電子工程所 (92 年 9 月~94 年 6 月)

論文題目：

新穎的金氧半電晶體雜訊模型與應用於超寬頻系統低雜訊放大器之設計 Novel Noise Modeling of RF MOSFETs and the Design of an UWB LNA with Modified L-degenerate Input Matching