Simulation results and conclusion

In this design we use the ADS to simulate circuit and ADS momentum to simulate the wire connected each device. The simulation result shows that the input and output return loss S11 is 18.75dB and S22 is 26dB at 5.8Ghz.The noise figure is 2.0dB. The power gain S21 is 15dB, as shown in Fig.Ⅲ.1,2. P1dB of this design is -13.5dBm, as shown in Fig.Ⅲ.3. IIP3 is , as shown in Fig.Ⅲ.4. Total consumed power is 8.24mA* 1.5V=12.36mW. The chip area is 0.684x0.614mm² and the layout is shown in Fig.Ⅲ.5. In this design we use the transistor’s intrinsic capacitor to achieve input match and do not need the gate inductor to improve the noise figure. The TableⅢ-1 shows performance summary and comparison. This design has been submit to APMC 2007.

0 1 2 3 4 5 6 7 8 9 10 11 12 frequency(GHz)

-35 -30 -25 -20 -15 -10 -5 0 5 10 15 20

dB

S11 S22 S21 S12

Fig.Ⅲ.1 Simulation result of S-parameter

1 2 3 4 5 6 7 8 9 10 11 12

frequency(GHz) 2

4 6 8 10 12 14 16

NF

Fig.Ⅲ.2 Simulation result of NF

-40 -35 -30 -25 -20 -15 -10 input power(dBm)

12 12.5 13 13.5 14 14.5 15 15.5 16

power gain

P1dB=-13.5dBm

Fig.Ⅲ.3. simulation result of P1dB

-30 -25 -20 -15 -10 -5

dBm -70

-60 -50 -40 -30 -20 -10 0

IIP3_sim.

IIP3=-7.8dBm Fig.Ⅲ.4 simulation result of IIP3.

Fig.Ⅲ.5 layout of LNA.

Table Ⅲ-1 performance summary and comparison.

comparison

This work [26] [24]

Technology 0.18umCMOS 0.18umCMOS 0.18umCMOS

Frequency

(GHZ) 5.8 5.25 5.7

S11(dB) -18.76 -14.7 -15

S22(dB) -26.167 - -9

Powe

gain(dB) 15.136 16 12.5

NF 2.00 1.8 3.7

P1dB(dBm) -13.5 - -13.5

Vdd(V) 1.5 1.8 1.8

Power

consumption 12.36mW 7.8mW 14.6mW

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Vita and Publication

姓名：方瑞嫻

學歷：

國立台南女子高級中學(86 年 9 月~89 年 6 月)

國立中山大學電機工程學系(90 年 9 月~93 年 6 月)

國立交通大學電信工程所碩士班(94 年 9 月~96 年 6 月)

Publication Remarks：

International conference papers:

1. H. I. Wu, Jui Hsien Fan and Christina F. Jou, “A 0.7V Transformer-feedback CMOS Low-noise Amplifier for 5-GHz Wireless LAN”, Progress In Electromagnetics Research Symposium (PIERS 2007), March 26-30, 2007, Beijing, China.