Chapter 7 Conclusions and Suggestions for Future Work
7.2 Suggestions for future work
There are a number of topics relevant to this thesis which deserves further studies. The following topics are suggested for future work.
(1) Further study on the reliability issues, such as endurance, retention, disturbs, and retention after write/erase cycles of the memory devices.
(2) Development of new methodology to improve the uniformity of metal or semiconductor nanocrystals.
(3) Investigation of the segregation of Ge nanodots in SiGeO and SiGeON films.
(4) Study on the fabrication methods using dry etching to fabricate Si, Ge, or/and metal nanodots.
(5) Investigation the memory effects of the SiC-based films such as SiCN and/or SiCON.
(6) Investigation of radiation hardness of the nanocrystal memory devices.
(7) Investigation of quantum confinement and opto-electronic effects of the nanocrystal memory device.
(8) Investigation of the formation of metal nanodots fabricated by the oxidation of metal silicide.
(9) Investigation of the memory effects of the metal oxide thin films and nanodots.
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Chapter 6:
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簡 歷
姓 名：顏 碩 廷
性 別：男
出生年月日：民國 67 年 9 月 16 日
籍 貫：台灣省台南縣
住 址：台南縣麻豆鎮忠孝路56號
學 歷：
國立台灣師範大學物理學系學士 (85.09-89.06) 國立交通大學電子研究所碩士班 (89.09-90.06) 國立交通大學電子研究所博士班 (90.09-93.06)
博士論文題目：
前瞻非揮發性記憶體元件之研究
Study on Advanced Nonvolatile Memory Devices
Publication List
International Regular Journals
：
[1] T. C. Chang, S. T. Yan, P. T. Liu, Z. W. Lin, H. Aoki, and S. M. Sze, “Extraction of Electrical Mechanisms of Low-Dielectric Constant Material MSZ for Interconnect Applications”, Thin Solid Films, Vol. 447-448, January 30, pp. 516-523 (2004).
[2] T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, H. H. Wu, and S. M. Sze,
“Quasi-Superlattice Storage (QS2): A Novel Concept of Multilevel Charge Storage”, accepted by Journal of The Electrochemical Society (2004).
International Letter Journals
：
[1] T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, S. H. Lin, S. M. Sze, “A novel approach for fabricating germanium nanocrystals for nonvolatile memory application”, Electrochem. and Solid-State Lett., 7, G17, (2004).
[2] T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, S. H. Lin, S. M. Sze, “Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride”, Electrochem. and Solid-State Lett., 7, G112 (2004).
[3] T. C. Chang, S. T. Yan, F. M. Yang, P. T. Liu and S. M. Sze, “Memory effect of oxide/SiC:O/oxide sandwiched structures”, Appl. Phys. Lett., 84, 2094 (2004).
[4] T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, S. H. Lin, S. M. Sze, “A new method of fabricating superior oxide/nitride/oxide gate stack”, has been accepted by Electrochemical and Solid-State Letters (2004).
[5] T. C. Chang, S. T. Yan, C. H. Hsu, M. T. Tang, J. F. Lee, Y. H. Tai, P. T. Liu and S.
M. Sze, “A distributed charge storage with GeO2 nanodots”, Appl. Phys. Lett., 84, 2581 (2004).
[6] T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, H. H. Wu, and S. M. Sze, “Leakage behavior of the quasi-superlattice stack for multilevel charge storage”, Applied Physics Letters, 84, 3687 (2004).
[7] T. C. Chang, S. T. Yan, Y. T. Chen, P. T. Liu, S. M. Sze, “A Novel Distributed Charge Storage Element Fabricated by the Oxidation of Amorphous Silicon Carbide”, accepted by Electrochemical and Solid-State Letters (2004).
[8] T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, H. H. Wu, and S. M. Sze,
“Quasi-superlattice storage: a concept of multilevel charge storage”, accepted by Applied Physics Letters.
[9] T. C. Chang, S. T. Yan, F. M. Yang, P. T. Liu and S. M. Sze, “Publisher's Note:
“Memory effect of oxide/SiC:O/oxide sandwiched structures” [Appl. Phys. Lett., 84, 2094 (2004)]”, Applied Physics Letters, 84, 4815 (2004).
[10] T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, T. S. Chang, and S. M. Sze,
“Electron charging and discharging effects of tungsten nanocrystals embedded in silicon dioxide for low-power nonvolatile memory technology”, under review in Applied Physics Letters.
International Conferences
：
[1] T. C. Chang, S. T. Yan, P. T. Liu, Z. W. Lin, and S. M. Sze, “Electrical characteristics of low-dielectric constant material MSZ for interconnect applications”, International Electron Devices and Materials Symposium, Taipei, Taiwan, p. 433-436, 2002.
[2] T. C. Chang, S. T. Yan, P. T. Liu, Z. W. Lin, H. Aoki, and S. M. Sze, “Extraction of Electrical Mechanisms of Low-Dielectric Constant Material MSZ for Interconnect Applications”, International Conference on Metallurgical Coatings and Thin Films, San Diego, CA, USA (2003).
Patents: