行政院國家科學委員會專題研究計畫 期中進度報告
傳輸線之面積、時間延遲、功率及雜訊最佳化(1/2)
計畫類別: 個別型計畫
計畫編號:
NSC91-2215-E-002-036-執行期間: 91 年 08 月 01 日至 92 年 07 月 31 日
執行單位: 國立臺灣大學電子工程學研究所
計畫主持人: 張耀文
報告類型: 精簡報告
處理方式: 本計畫可公開查詢
中
華
民
國 92 年 6 月 3 日
傳輸線之面積、時間延遲、功率及雜訊最佳化
Ar ea, Delay, Power , and Noise Optimization for Tr ansmission Lines
計畫編號:NSC 91-2215-E-002-036
執行期限:91 年 8 月 1 日至 92 年 7 月 31 日
主持人:張耀文副教授 臺灣大學電子工程學研究所
一
﹑
中文摘要
對於深次微米,高效能電路,當在決定電路延遲時間,電感的效應伴演著一個非常重要的角色。在本 計畫中,我們推導出一個準確的公式來模擬晶片階層之高速電路延遲模型 (buffered RLY/RLC wires and trees)。我們的公式可以處理平衡與非平衡的電路 (balanced and un-balanced trees) 且考慮加入緩衝器 (buffer insertion),並根據 180nm 的製程技術 (technology)。
關鍵詞:平衡與非平衡的電路,緩衝器
二﹑英文摘要(Abstr act)
For deep-submicron, high-performance circuits, the inductive effect plays a very important role in determining the circuit delay. In this project, we derive accurate formulae for modeling the delays of buffered RLY/RLC wires and trees. Our formulae can handle balanced and un-balanced trees and consider buffer insertion based on the 180 nm technology.
Keywor ds: Balanced and un-balanced trees, buffer
三﹑
背景和目的
1. Backgr ound
As technology advances into the very deep-submicron era, interconnect delay dominates overall circuit performance. Therefore, accurately modeling the interconnect delay becomes a major challenge in high performance IC design. For deep-submicron, high-performance circuits, ignoring inductance effects may incur a large amount of error, since an RC model as compared to an RLC model may create errors of up to 30% in the total propagation delay of a repeater system [9]. As technology improves and die size increases, short rise/fall times of signals and long wires make inductive effects more significant than before [15]. Therefore, it is very important to consider the effects of inductance.
Timing is a crucial concern in the design of high-performance circuits. Arunachalam et al. in [3] proposed accurate CMOS gate delay models for general RLC loads. The waveform resulted from their delay model excellently agrees with SPICE results; however, they do not present any formula for propagation delay. Many delay models have been proposed to calculate delay (e.g., [4, 5, 9, 14, 18]); however, these models cannot apply to tree structures. Modeling and analysis techniques for timing calculation under tree structures have been studied extensively in the literature [1, 2, 7, 8, 10, 11, 12]. Previous work in [1] proposed a method (Fitted Elmore Delay) for delay estimation by using the curve fitting technique. However, their work does not consider inductance. The work in [2] only considered the RC delay model, and did not include the inductance effect. The works in [7, 8] extended the Elmore delay to include the inductance effect, but they did not consider buffer insertion/sizing. Ismail and Friedman in [10] proposed an algorithm for buffer insertion/sizing in an RLC tree. However, if the tree is unbalanced, as pointed out in the paper, the delay estimation may incur significantly larger errors. The works in [11, 12] adopted two-pole simulation of interconnect trees via the moment matching technique, and used non-uniform lumped segments to model the distributed lines. However, they did not apply buffer insertion/sizing to reduce the delay. Kahng and Muddu in [13] provided an analytic delay model for
interconnection lines under the step input, and extended their model to estimate the delay in arbitrary interconnect trees. However, their model does not consider buffer insertion/sizing, and cannot calculate for any percentage of delay time. Ismail and Friedman in [10] presented an algorithm to insert and size buffers in an RLC tree for minimizing the delay. However, their empirical formulae obtained by curve-fitting with circuit simulation were only for the 50% propagation delay and the 10%--90% rise time. Therefore, their works cannot treat any percentage of delay time. Banerjee in [4] considered buffer insertion/sizing for an RLC interconnection line and
did not handle the problem with the tree structure. Table 1 compares the features of important related works.
2. Objective
In this project, we derive accurate formulae for modeling the delays of buffered RLY/RLC wires and trees. The RLY model not only can model RLC interconnect, but also can consider off-path subtree effects. Our formulae can handle balanced and un-balanced trees and consider buffer insertion based on the 180 nm technology.
四
﹑
研究方法
We shall in this form discuss the problem formulation, notations,
accurate formulae for modeling the delay of RLY wires, buffered RLC load,
and buffered RLC trees.
1. Pr oblem For mulation
In this project, we shall deve lop accurate formulae for modeling the
delays of buffered RLY/RLC wires and trees. Our formulae need to handle
balanced and un-balanced trees and consider buffer insertion. We
formulate this problem as follows:
l
Input: Buffered RLY/RLC wires and trees.l
Objective: Determine the path delay estimation for buffered RLY/RLC wires and trees.2. Notations
We use the following notations throughout this project.
3. Accur ate Delay Model 3.1. Delay Model for RLY Wir es
Sriram and Kang in [16] developed an equivalent single RLY line (see
Figure 1) for an RLC tree, where N is the number of RLY sections in an
RLC tree. As shown in Figure 2, we can model a distributed RLC line of
The transfer function for the structure of Figure 1 is given by
By the approximation method proposed by Gao et al. in [7], we can
approximate Equation (1) as follows:
where
The first and second moments of the transfer function from Equation
(1) can be obtained by the coefficients
b and
1b , i.e.,
2M
1=
b
1and
2 2 1 2
b
b
M
=
−
. The two poles
s and
1s of the transfer function could be
2real or complex depending on the sign of
(
b
12−
4
b
2)
. Thus, we separately
discuss the results from two poles response for each of these cases
classified in [13].
Case I. Real Poles: The condition for this case is
(
b
12−
4
b
2)
> 0. The step
response, which is the inverse Laplace transform of
1H
(
s
)
s
, is given by
where
For a step input, the f
×
100%, (where
0
≤
f
<
1
) delay,
τ , (i.e., v(τ )
=
fV ) is the solution of the following equation [4]:
o(2).
Case II. Complex Poles: The condition for this case is
)
4
(
22 1
b
b
−
< 0. The time-domain response for this case is given bywhere
We consider a step input. Thus,
v(
τ ) =
fV
o is the solution of the following equation.Similarly, we also use the Newton-Raphson method to solve the delay that was calculated by Equation (3).
Case III. Double Poles: The condition for this case is
)
4
(
22 1
b
b
−
= 0. The time-domain response is given by
where
Similarly, the Newton-Raphson method can be applied to calculate the delay that was calculated by Equation (4).
For a series section of RLC segments, Kahng and Muddu in [12] presented an expression for the coefficient of
s
ands
2of admittance. As shown in Figure 3, the admittance at nodei
can be expressed in terms of the admittance at nodej
.Using the above recursive equation, the admittance of the off-path subtrees can be computed.
3.2. Delay Model for Buffer ed RLC Load
A CMOS inverter driving an RLC load is shown in Figure 4. For an interconnect wire of length
h
i, its total resistance isR
=
rh
i, total inductance isL
=
lh
i, and total capacitance isC
=
ch
i, wherer
,l
, andc
are the resistance, inductance, and capacitance per unit length of the interconnect, respectively. To consider the velocity saturation effects in short-channel devices, a CMOS inverter is modeled by using the alpha power law [17].V
o andV
1are the output voltage of the CMOS inverter and the output voltage at the end of the interconnect wire, respectively.The input voltage
V is a fast ramp signal that can be approximated by
ina step signal:
where
τ is the input transition time.
rBecause
V and
oV depend on
1V and the operation region of NMOS
intransistor, we separately discuss three different conditions in the
following [18]:
Case I.
τ
n≤
t
≤
τ
r: The NMOS transistor is ON and operates in the saturation
region. We have the following equations:
Therefore, the solution of
V
o(
t
)
is
where
V is the switching threshold voltage and
Tτ is the time for
nV
into reach
V .
TCase II.
τ
n≤
t
≤
τ
r:
V is fixed at
inV and the NMOS transistor continues
ddto operate in the saturation region. The discharge current is equal to
the saturated drain-to-source current of the NMOS transistor:
Therefore,
nsat
τ is the time when the NMOS transistor leaves the saturation region,
nsat
V
is the drain saturation voltage and is usually around
0
.
7
V
ddin
short-channel devices [14]. As
V
o=
V
nsat,
t
=
τ
nsat, where
τ
nsatis
determined from Equation (6). Therefore, we have
Case III.
t
≥
τ
nsat: After
V drops below
oV
nsat, the NMOS transistor enters
the linear region:
where
γ is the effective output conductance.
nTherefore,
where
1
k and
k can be determined from
2V
o(
τ
nsat)
and
V
o'
(
τ
nsat)
. Because
α is
1typically much greater than
α , we have
2Therefore, the propagation delay time (50%) of a CMOS inverter is
3.3. Delay Model for Buffer ed RLC Tr ees
In this section, we extend our delay model to handle arbitrary
balanced and un-balanced buffered RLC trees. For instance, consider an
un-balanced buffered RLC tree with a root (or a source) and a set of leaves
(or sinks) as shown in Figure 5. The buffer is inserted in an arbitrary
location of the tree. Our delay model not only can handle different wire
lengths but also can compute any percentage of delay time.
path) in Figure 5. Buffer insertion divides the path into three stages.
The path can be represented by the equivalent circuit shown in Figure 6.
In order to calculate the delay time of stage 2, we show the equivalent
circuits of Figure 6 (b) in Figure 7. We apply the method presented in
Sections 3.1 and 3.2. Assume that the delay times of stage 1, stage 2,
and stage 3 are
τ ,
1τ , and
2τ , respectively. The total delay between the
3source S and node 7 is
五﹑
成果 (Publications)
1. T.-C. Chen, S.-R. Pan, and Y.-W. Chang, ``Timing modeling and optimization under the transmission line model," accepted and to appear in IEEE Trans. VLSI Systems, 2003.
2. S.-L. Wang, T.-C. Chen, and Y.-W. Chang, ``Accurate Delay Modeling for Buffered RLY/RLC Trees," submitted to Proc. of IEEE/ACM International Conference on Computer-Aided Design, 2003.
六
﹑
參考文獻
1. A. I. Abou-Seido, B. Nowak, and C. Chu, ``Fitted Elmore Delay: A
Simple and Accurate Interconnect Delay Model,'' Proc. ICCD, pp. 422--217, Sep. 2002.
2. V. Adler and E. G. Friedman, ``Uniform Repeater Insertion in RC Trees,'' IEEE Trans. on CAS-I\/, vol. 47, no. 10, pp. 1515--1523, Oct. 2000.
3. R. Arunachalam, F. Dartu, and L. T. Pileggi, ``CMOS Gate Delay Models for General RLC Loading,'' Proc. ICCD, pp. 224--229, Oct. 1997.
4. K. Banerjee and A. Mehrotra, ``Analysis of On-Chip Inductance Effects using a Novel Performance Optimization Methodology for Distributed RLC,'' Proc. DAC, pp. 798--803, June 2001.
5. K. Banerjee and A. Mehrotra, ``Analysis of On-Chip Inductance Effects for Distributed RLC Interconnects,'' IEEE Trans. on CAD, vol. 21, no. 8, pp.904--915, Aug. 2002.
Vol. 19, No. 1, 1948.
7. D. S. Gao and D. Zhou, ``Propagation Delay in RLC Interconnection Networks,'' Int. Symposium on Circuit and Systems, pp. 2125--2128, May 1993.
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10.Y. I. Ismail and E. G. Friedman, ``Repeater Insertion in Trees Structured Inductive Interconnect,'' IEEE Trans. on CAS-II, vol. 48, no. 5, pp. 471--481, May. 2001.
11.A. B. Kahng and S. Muddu, ``Optimal Equivalent Circuits for Interconnect Delay Calculations Using Moments,'' Proc. European Design Automation Conf., pp. 164--169, Sep. 1994.
12.A. B. Kahng and S. Muddu, ``Two-pole Analysis of Interconnection Trees,'' Proc. MCMC Conf., pp. 105--110, Jan. 1995.
13.A. B. Kahng and S. Muddu, ``An Analytical Delay Model for RLC
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14.Ankireddy Nalamalpu and Wayne Burleson, ``Repeater Insertion in deep sub-micron CMOS: Ramp-based Analytical Model and Placement Sensitivity Analysis,'' Proceedings of International Symposium on Circuits and Systems, vol.3, pp. 766 -769, June. 2000.
15.Semiconductor Industry Association, International Technology Roadmap for Semiconductors 1999 Edition, 1999.
16.M. Sriram and S. M. Kang, ``Performance Driven MCM Routing Using a Second Order RLC Tree Delay Model,'' Proc. IEEE Intl. Conf. on Wafer Scale Integration, pp. 262-267, Jan. 1993.
17.T. Sakurai and A. R. Newton, ``Alpha-Power Law MOSFET Model and its Applications to CMOS Inverter Delay and Other Formulas,'' IEEE Journal of Solid-State Circuits, Vol. 25, No. 2, pp. 584-594, Apr. 1990.
18.K. T. Tang and E. G. Friedman, ``Delay and Power Expressions Characterizing a CMOS Inverter Driving an RLC Load,'' Proceedings of the IEEE International Symposium on Circuits and Systems, pp. III.283-III.286, May 2000.