Publisher’s Note: “Memory effect of oxide/SiC:O/oxide sandwiched structures” [Appl.
Phys. Lett. 84, 2094 (2004)]
T. C. Chang, S. T. Yan, F. M. Yang, P. T. Liu, and S. M. Sze
Citation: Applied Physics Letters 84, 4815 (2004); doi: 10.1063/1.1761633 View online: http://dx.doi.org/10.1063/1.1761633
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/84/23?ver=pdfcov Published by the AIP Publishing
Articles you may be interested in
Memory effect of oxide/SiC:O/oxide sandwiched structures Appl. Phys. Lett. 84, 2094 (2004); 10.1063/1.1675924
Publisher’s Note: “Silicon oxide thickness-dependent growth of carbon nanotubes” [Appl. Phys. Lett. 84, 109 (2004)]
Appl. Phys. Lett. 84, 2002 (2004); 10.1063/1.1689959
Response to “Comment on ‘Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing’” [Appl. Phys. Lett. 78, 4043 (2001)]
Appl. Phys. Lett. 78, 4045 (2001); 10.1063/1.1379979
Comment on “Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing” [Appl. Phys. Lett. 76, 1585 (2000)]
Appl. Phys. Lett. 78, 4043 (2001); 10.1063/1.1379978
Response to “Comment on ‘Do P b1 centers have levels in the Si band gap? Spin-dependent recombination study of the P b1 “hyperfine spectrum”’” [Appl. Phys. Lett. 78, 1451 (2001)]
Appl. Phys. Lett. 78, 1453 (2001); 10.1063/1.1352691
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 140.113.38.11 On: Wed, 30 Apr 2014 08:00:16
ERRATA
Publisher’s Note: ‘‘Memory effect of oxide
Õ
SiC:O
Õ
oxide sandwiched
structures’’
†
Appl. Phys. Lett. 84, 2094
„
2004
…‡
T. C. Changa)
Department of Physics and Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, Republic of China and Center for Nanoscience & Nanotechnology,
National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung, Taiwan 804, Republic of China
S. T. Yan and F. M. Yang
Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan, Republic of China
P. T. Liu and S. M. Sze
National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, Hsin-Chu 300, Taiwan, Republic of China
共Received 20 April 2004; published online 21 May 2004兲 关DOI: 10.1063/1.1761633兴
This article was originally published with errors in the affiliation for T. C. Chang. AIP apologizes for these errors; the correct version of T. C. Chang’s affiliation appears above. All online versions of the article have been corrected.
a兲Electronic mail: [email protected]
APPLIED PHYSICS LETTERS VOLUME 84, NUMBER 23 7 JUNE 2004
4815
0003-6951/2004/84(23)/4815/1/$22.00 © 2004 American Institute of Physics
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP: 140.113.38.11 On: Wed, 30 Apr 2014 08:00:16
