1. 本研究藉由濺鍍金屬在矽試片上，於ＭＰＣＶＤ系統中以較簡單的製程 製備出均勻性及再現性良好的高準直性奈米尖錐結構。
2. 本研究發現此奈米尖錐結構為電漿式乾蝕刻所製備出來的高準直性矽 奈米尖錐，而一開始所濺鍍的金屬作為奈米遮罩(nano-mask)附著在矽奈 米尖錐的頂端。
3. 在低工作壓力(1torr)下，氣體有著較大的自由徑，可製備深寬比較大的 高準直性奈米尖錐。
4. 在施加高偏壓(-250V)下，氣體離子具有較大的加速度，可製備深寬比 較大且頂端尖銳的高準直性奈米尖錐。
5. 在高微波功率(300W)下，基材溫度上升，氣體具有較大的動能，可製備 深寬比較大的高準直性奈米尖錐。
6. 實驗中發現可藉著調整製程時間來控制高準直性矽奈米尖錐的高度尺 寸(500nm~3000nm)。
7. 本研究藉由提出一個高準直性矽奈米尖錐可能的形成機制，在ＭＰＣＶ
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