3.7.1 檢測儀器介紹
本章將使用下列儀器進行量測：
能量色散 X 射線譜 (Energy-dispersive X-ray spectroscopy，EDS)，是
一種用於元素分析和化學表徵的分析手段。通過收集
X 射線機或其它 X 射線源產生的
X 射線和樣品交互作用時發出的 X 射線進行分析。由於不同元素因原子結構不同而發射譜各異，所以可以通過分析 X 射線譜分辨樣品所含的不同成分。
傅里葉轉換紅外光譜 (Micro Fourier Transform Infrared spectroscopy, FTIR)，是一種用來獲得待測物紅外線吸收光譜和放射光譜的技術。
掃描電子顯微鏡 (Scanning Electron Microscope, SEM)，是一種電子顯
微鏡，通過聚焦電子束掃描樣品表面來產生圖像。 光學顯微鏡 (OM)，是一種利用光學透鏡產生影像放大效應的顯微鏡。
89 可能出現碳氧化矽(Silicon Oxycarbide, SiOxC4-x)的成份。
VH2O = 6mL VH2O/VACE = 6mL：6mL
90
圖 3-54 SEM 圖像：SOI 經
H
2O/scCO
2處理後的表面形貌 (scCO2 treatment/VH2O= 6mL@P = 3000psi, T = 150℃, 3hrs)
圖 3-55 SEM 圖像：SOI 經
H
2O & ACE/scCO
2處理後的表面形貌 (scCO2 treatment/ VH2O：V
ACE= 6mL：6mL@P = 3000psi, T = 150℃, 3hrs)
91
圖 3-56 EDS 分析：未經 scCO2處理過的 SOI 基板
圖 3-57 EDS 分析：SOI 經 scCO2處理後之 EDS 分析(6mL H2O@scCO2) (scCO2 treatment@P = 3000psi, T = 150℃, 3hrs)
92
圖 3-58 EDS 分析：SOI 經 scCO2處理後之 EDS 分析(6mL H2O &6mL ACE@scCO2)
(scCO2 treatment@P = 3000psi, T = 150℃, 3hrs)
93
94
VH2O = 6mL VH2O/VACE = 6mL：6mL
圖 3-59 OM 圖像：P 型矽基板經 H2O/scCO2處理後的之表面形貌 (scCO2 treatment@P = 3000psi, T = 150℃, 3hrs)
95
圖 3-60 EDS 分析：未經 scCO2處理過的 P 型矽基板
圖 3-61 EDS 分析：P 型矽基板經 scCO2處理及濕蝕刻後之 EDS 分析(6mL H2O@scCO2)
(scCO2 treatment@P = 3000psi, T = 150℃, 3hrs / wet etching 24hrs)
96
圖 3-62 EDS 分析：P 型矽基板經 scCO2處理及濕蝕刻後之 EDS 分析(6mL H2O
& 6mL ACE@scCO2)
(scCO2 treatment@P = 3000psi, T = 150℃, 3hrs / wet etching 24hrs)
97
圖 3-63 SEM 圖像：P 型矽基板經 scCO2處理及濕蝕刻後之表層橫截面(6mL H2O@scCO2)
(scCO2 treatment@P = 3000psi, T = 150℃, 3hrs / wet etching 24hrs)
圖 3-64 SEM 圖像：P 型矽基板經 scCO2處理及濕蝕刻後之表層橫截面(6mL H2O & 6mL ACE@scCO2)
(scCO2 treatment@P = 3000psi, T = 150℃, 3hrs / wet etching 24hrs)
98
3.7.5 SOI 樣品超臨界處理後量測 FTIR
為了瞭解處理後的生成物，使用含水 scCO2(VH2O = 6mL)對 200nm SOI 進行處 理，SOI 大小為 25mm2，之後，量測 FTIR 光譜。
FTIR 測量結果可見圖 3-65，上圖為波數(wavenumber) 700 至 1300 的部分，下 圖為波數 1300 至 4000 的部分，分別測量(a)SOI 基板 (b) SOI 經 scCO2處理後無 (C)及氧(O)的化合物，形成碳氧化矽(Silicon Oxycarbide, SiOxC4-x)，且 HF 對碳氧化 矽具有蝕刻能力[32]，再經過 FTIR 的測量後，更能確定其成分組成，此化合物對 HF 而言在 SOI 表面形成了奈米級的新蝕刻路徑，為 HF/scCO2二階段蝕刻的關鍵。
99
圖 3-65 SOI 經 scCO2處理後之 FTIR 量測結果
(a)SOI 基板 (b) SOI 經 scCO2處理後無黑點處 (c) SOI 經 scCO2處理後出現 的黑點 (d) SOI 經 scCO2處理後濕蝕刻 24hrs
100
oC)及壓力(2000psi, 2500psi & 3000psi)下，研究溫度與壓力對於蝕刻 SOI 之影響，
在同樣的 HF 濃度【[HF]@scCO2 = 273mM】下蝕刻發現，實驗壓力及實驗溫度的提
101 c-SiNMs 經由原子力顯微鏡(atonic force microscope, AFM)量測，其平均表面粗糙度 (Ra)約為 0.5nm。
102
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