實作二，60GHz mHEMT 升頻器

Frequency

(GHz)

測結果得知 3dB bandwidth是在 57-64GHz，而且在 57-60GHz 的OP1dB都有 10dBm以上，增益也大於 12dB。

4.5 實作二，60GHz mHEMT升頻器

4.5.1 研究動機

我們設計了一個 60G升頻器，來驗證flip-chip前後的表現特性。

pler的原因是為了使得LO只需要輸入 9.3GHz左右然後在設計 一個操作在 30GHz的放大器來驅動反對稱二極體，在與中頻 (4.2GHz)混頻得到RF(60GHz)。

(2) 整體電路架構

4.5.3 電路量測結果

-4 0 4 8 12

-60 -50 -40 -30 -20 -10

Conversion Gain (dB)

LO Power (dBm)

Before FC After FC

圖 4 - 20 Conversion Gain V.S LO Power

-25 -20 -15 -10 -5 0 5 10

-20 -16 -12

Conversion Gain (dB)

IF Power (dBm) Before FC

After FC

圖 4 - 21 Conversion Gain V.S IF Power

56 58 60 62 64 66 -40

-30 -20 -10

Conversion Gain (dB)

RF Frequency (GHz) Before FC

After FC

圖 4 - 22 RF Bandwidth

0 1 2 3 4 5 6 7 8 9

-30 -25 -20 -15 -10

Conversion Gain (dB)

IF Frequency (GHz) Before FC

After FC

圖 4 - 23 IF Bandwidth

8.0 8.5 9.0 9.5 10.0 10.5 -70

-60 -50 -40

Isolation (dB)

LO Frequency (GHz) Before FC

After FC

圖 4 - 24 LO-RF Isolation

25 26 27 28 29 30 31

-50 -40 -30 -20 -10

Isolation (dB)

3LO Frequency (GHz) Before FC

After FC

圖 4 - 25 3LO-RF Isolation

50 52 54 56 58 60 62

Isolation (dB)

6LO Frequency (GHz) Before FC

Output Power (dBm)

Input Power (dBm)

IM3 (Before FC) Main (Before FC) IM3 (After FC) Main (After FC)

圖 4 - 27 OIP3

圖 4 - 28 Die Photo

圖 4 - 29 Flip-Chip Photo

4.5.4 結果與討論

Conversion Before FC After FC

Input Frequency 4.2 GHz 4.2GHz

Conversion Gain -14 dB -16 dB

OP1dB -10 dBm -11 dBm

OIP3 2 dBm 3 dBm

RF Bandwidth 57~61 GHz 57~61 GHz

6LO-IF Isolation > 30 dB > 30 dB

Vdd 2.5 V 2.5 V

Power Consumption 212 mW 212 mW

表 4 - 2 比較flip-chip前後的量測結果

由量測結果得知flip-chip前後其coversion gian只降低 2dB，頻寬也 沒有太大的變動，只是頻帶往低頻移動，原因可能是寄生效應鎖造 成的影響，不過大體而言，電路的特性與趨勢仍在，由此可證明 flip-chip技術可以運用在V-band的通訊系統上。

第五章

結論

本論文第三章利用了 SiGe 0.35 um 和 CMOS 0.18um 製程，實作 與量測“雙次降頻 60GHz 接收機”以及“雙次升頻 60GHz 接收機”，。

第三章實驗一，“雙次降頻 60GHz 接收機”，我們可以看到轉換增益 為-2~-4dB、P1dB 點約落在-3dBm 處和 RF 頻寬約為 21GHz，IF 頻寬 約為 250 MHz，NF 約為 17dB 左右。第三章實驗二，“雙次升頻 60GHz 接收機”，可以看到轉換增益為-6dB、OP1dB 點約落在-30dBm 處、

和 RF 頻寬約為 14GHz。

論文第四章，主要是利用 pHMET 0.15 um 和 mHEMT 0.15 um 製程去分別實現 60GHz 功率放大器與比較在 V-BAND flip-chip 前後 之差異。第四章實驗一，利用 pHMET 0.15 um 製程完成“60GHz 功率 放大器”實驗結果顯示 57-64GHz 都有在 3dB 頻寬以內，OP1dB 都有 在 10dBm 以上，增益也有 12dB 以上。第四章實驗二，利用和 mHEMT 0.15 um 製程實作“60GHz mHEMT 升頻器＂，實驗結果顯示 flip-chip 前後轉換增益降了約 2dB 以及所需要的 LO 功率稍微提高之外，其 RF 頻寬或者 IF 頻寬的趨勢都差不多，有就驗證了 flip-chip 技術可以 運用在高頻。

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