五、 結論與未來展望
5.2 未來展望
濺鍍法沉積 TiO2光觸媒薄膜已發展許久，而選用之電源不外乎是直流、
直流脈衝、射頻等，且沉積之基板都需耐高溫，如要運用至不耐高溫之基 板都需再進行快速退火製程，使 TiO2薄膜獲得足夠能量，形成銳鈦礦及金 紅石之結構。
根據相關文獻[53]指出大部分的塑膠，受到紫外光的照射下本身結構鍵結 會受到破壞，發生氧化、老化等情況，且塑膠在高溫的環境下會發生變形、翹 曲等現象。高功率脈衝磁控濺鍍是未來之主流，因其可將電漿密度提升，比 傳統磁控濺鍍高上數百倍，所以沉積出的薄膜擁有良好緻密性與附著力，
也可使 TiO2薄膜獲得足夠能量，形成銳鈦礦及金紅石之結構，而不需依賴 基板加溫，但也因此特性，濺鍍槍溫度會提升，靶材會因溫度過高而損壞，
且濺鍍槍內部磁鐵也會因過熱而消磁，所以目前仍有許多改進空間如下：
1. 改良濺鍍槍冷卻之機構，使靶材與磁鐵之熱源能迅速被帶離。
2. 在塑膠上先鍍緩衝層氧化鋁(Al2O3)，因氧化鋁可防止塑膠受到紫外 光照射而產生老化現象。
3. 利用共鍍方式沉積 TiO2及 Cr，摻雜微量的 Cr 可降低 TiO2的能隙值 (band gap)，讓 TiO2的吸收範圍往可見光偏移，也可加速電子躍升 至導帶的速度，提升光催化反應的效率。
4. 施加基板偏壓，使反應離子加速撞擊基板，增加薄膜緻密性及附著 力。
5. 使用離子槍輔助濺鍍，加速離子轟擊靶材，使靶材原子獲得更多能 量沉積至基板上，增加薄膜緻密性與附著力。
6. 探討高功率脈衝的頻率及休止時間對 TiO2薄膜的影響，尋找最佳化 之參數。
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