未來展望

由於光點的不對稱以及光無法有效率的在空氣與增益介質中穿透，讓我們在 光耦合的過程中損失許多能量。光點的不對稱我們可以將波導改成垂直晶片鏡面 來解決，而穿透率的問題我們可以透過抗反射鍍膜來解決。因此我們若將波導形 狀改成如圖 6-1 一側傾斜一側正常，並在會放置繞射光柵的傾斜 A 側鍍上抗反射 鍍膜，使得空氣與增益介質的介面之穿透率可以提高，而因為我們只需把一階光 回饋至晶片中，因此沒有光點變型的問題；在放置反射鏡的 B 側也是鍍上抗反 射鍍膜，使得光不會出不來或是進不去，而因為 B 側的波導是垂直空氣與晶片

62

之介面，因此沒有光點變形的問題，我們可以將經過反射鏡的光更完整的反射回 晶片。

我們使用的架構比較麻煩的是為了選定特定波長而每調整一次繞射光柵，零 階繞射光都會改變方向，因此我們需要重新校正收光位置，因此每次收光的條件 都不盡相同。我們可以使用[31]的方法使得出光不會因為繞射光柵的旋轉而改變 方向，也可以將 B 側的反射鏡拿掉，並在 B 側晶片鏡面鍍上特定反射率的鍍膜，

其反射率並不會過低使得 A 側出光太弱導至光柵貢獻度不足，也不會太高使得 我們在 B 側收光處的的出光太弱。

63

參考文獻

[1]. S. C. Woodworth, D. T. Cassidy and M. J. Hamp, “Sensitive Absorption Spectroscopy by Use of an Asymmetric Multiple-Quantum-Well Diode Laser in an External Cavity,” Appl. Opt., vol. 40, no. 36, pp. 6719-6724, 2001.

[2]. N. Kuramoto and K. Fujii , “Volume determination of a silicon sphere using an improved interferometer with optical frequency tuning,” IEEE Trans. Instrum.

Meas., vol. 54, no.5, pp. 868-871, 2005.

[3]. S. J. B. Yoo, “Wavelength conversion technologies for WDM network applications,” J. Lightwave Technol., vol. 14. no. 6, pp. 955-966, 1996.

[4]. P. D. L. Greenwood, K. V. Patel, D. T. D. Childs, K. M. Groom, B. J. Stevens, M.

Hopkinson and R. A. Hogg “Multi-contact quantum dot superluminescent diodes for optical coherence tomography,” SPIE Proc., vol. 7230, pp. 72300C, 2009 [5]. M. Bagley, R. Wyatt, D. J. Elton, H. J. Wickes, P. C. Spurdens, C. P. Seltzer, D.

M. Cooper, W. J. Devlin, “242nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity,” Electron. Lett., vol. 26, no. 4, pp.267-269, 1990.

[6]. H. Tabuchi and H. Ishikawa, “External grating tunable MQW laser with wide tuning range of 240 nm,” Electron. Lett., vol. 26, no. 11, pp.742-743, 1990.

[7]. C. P. Seltzer, M. Bagley, D. J. Elton, S. Perrin and D. M. Cooper, “160 nm continuous tuning of an MQW laser in an external cavity across the entire 1.3 um communications window,” Electron. Lett., vol. 27, no. 1, pp.95-96, 1991.

[8]. 蘇倍瑩, ”以啁啾式多層堆疊量子點實現波長可調外腔式雷射,” 國立交通大 學電子所 碩士論文, 2011.

[9]. C. Ye, “Tunable External Cavity Diode Lasers,” Word Scientific, 2004.

[10]. 黃俊仁, “啁啾式多層堆疊量子點雷射之特性暨其適用於光學同調斷層掃描 系統之可行性分析研究,” 國立交通大學電子所 碩士論文, 2009.

[11]. V. M. Ustinov, A. E. Zhukov, A. Y. Egorov and N. A. Maleev, “Quantum Dot Lasers,” Oxford, U.K.: Oxford Univ. Press, 2003.

[12]. Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu and Z. G. Wang, “Quantum-dot

64

superluminescent diode: A proposal for an ultra-wide output spectrum,” Opt.

Quantum Electron., vol. 31, no. 12, pp.1235-1246, 1999.

[13]. M. V. Maximov, L. V. Asryan, Y. M. Shernyakov, A. F. Tsatsul'nikov, I. N.

Kaiander, V. V. Nikolaev, A. R. Kovsh, S. S. Mikhrin, V. M. Ustinov, A. E.

Zhukov, Z. I. Alferov, N. N. Ledenstou and D. Bimberg, “Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation,” IEEE J. Quantum Electron., vol. 37, no. 5, pp. 676-683, 2001.

[14]. A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. Provost, C. Paranthoen and A.

Fiore, “Impact of intraband relaxation on the performance of a quantum-dot laser,” IEEE J. Sel. Top. Quantum Electron., vol. 9, no. 5, pp. 1308-1314, 2003.

[15]. A. E. Zhukov, V. M. Ustinov, A. Y. Egorov, A. R. Kovsh, A. F. Tsatsul`nikov, N.

N. Ledentsov, S. V. Zaitsev, N. Y. Gordeev, P. S. Kopèv and Z. I. Alferov,

“Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser,”

Jpn. J. Appl. Phys., vol. 36, no. 6B, pp. 4216-4218, 1997.

[16]. A. J. Williamson, L. W. Wang and A. Zunger, “Theoretical interpretation of the experimental electronic structure of lens-shaped self-assembled InAs/GaAs quantum dots,” Phys. Rev. B, vol. 62, no. 19, pp. 12963-12977, 2000.

[17]. K. Nishi, H. Saito, S. Sugou and J. S. Lee, “A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates,” Appl. Phys. Lett., vol. 74, no. 8, pp. 1111-1113, 1998.

[18]. J. X. Chen, A. Markus, A. Fiore, U. Oesterle, R. P. Stanley, J. F. Carlin, R.

Houdre, M. Ilegems, Lazzarini., L. Nasi, M. T. Todaro, E. Piscopiello, R.

Cingolani, M. Catalano, J. Katcki and J. Ratajczak, “Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications,” J.

Appl. Phys., vol. 91, no. 10, pp. 6710-6716, 2002.

[19]. S. K. Ray, K. M. Groom, H. Y. Liu, M. Hopkinson and R. A. Hogg, “Broad-band superluminescent light emitting diodes incorporating quantum dots in compositionally modulated quantum wells,” IEEE Photon. Technol. Lett., vol. 19, no. 1, pp. 58-60, 2006.

[20]. P. D. L. Greenwood, D. T. D. Childs, K. M. Groom, B. J. Stevens, M. Hopkinson and R. A. Hogg, “Tuning Superluminescent Diode Characteristics for Optical

65

Coherence Tomography Systems by Utilizing a Multicontact Device Incorporating Wavelength-Modulated Quantum Dots,” IEEE J. Sel. Top.

Quantum Electron., vol. 15, no. 3, pp.757-763, 2009.

[21]. L. H. Li, M. Rossetti, A. Fiore, L. Occhi and C. Velez, “Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers,” Electron.

Lett., vol. 41, no. 1, pp. 41-43, 2005.

[22]. L. A. Coldren and S. W. Corzine, “Diode lasers and photonic integrated circuits,”

New York: Wiley, 1995.

[23]. C. F. Lin and C. S. Juang, “Superluminescent diodes with bent waveguide,”

IEEE Photon. Technol. Lett., vol. 8, no. 2, pp. 206-208, 1996.

[24]. G. A. Alphonse, D. B. Gilbert, M. G. Harvey and M. Ettenberg, “High-power superluminescent diodes,” IEEE J. Quantum Electron., vol. 24, no. 12, pp.

2454-2457, 1988

[25]. S. Wang, “Principles of distributed feedback and distributed Bragg-reflector lasers,” IEEE J. Quantum Electron., vol. 10, no. 4, pp. 413-427, 1974

[26]. 周柏存, “半導體量子點雷射之主動層結構研究,” 國立交通大學電子所 碩 士論文, 2010.

[27]. Y. O. Kostin, A. A. Lobintsov and S. D. Yakubovich, “Novel high-power superluminescent diodes with wide active channels,” Laser and Fiber-Optical Networks Modeling LFNM 2010, pp. 10-12, 2010.

[28]. L. H. Li, M. Rossetti and A. Fiore, “Chirped multiple InAs quantum dot structure for wide spectrum device applications,” J. Cryst. Growth, vol. 278, no. 1, pp.

680-684, 2005.

[29]. G. Lin, P. Y. Su, H. C. Cheng, “Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure,” Opt. Express, vol. 20, no. 4, pp. 3941-3947, 2012.

[30]. 盧廷昌, 王興宗, “半導體雷射技術,” 五南出版社, 2010.

[31]. L. Ricci, M. Weidemüller, T. Esslinger, A. Hemmerich, C. Zimmermann, V.

Vuletic, W. König and T. W. Hänsch, “A compact grating-stabilized diode laser system for atomic physics,” Opt. Commun., vol. 117, no. 5, pp. 541-549, 1995.

66

[32]. N. Gade, J. Osmundsen, “Gain measurements on semiconductor lasers by optical feedback from an external grating cavity,” IEEE J. Quantum Electron., vol. 19, no. 8, pp. 1238-1242, 1983.

67

簡歷(Vita)

姓名：劉乃誠(Nai-Cheng Liu)

性別：男

出生年月日：民國 77 年 08 月 02 日

籍貫：台灣省

學歷：

國立中央大學物理系學士(95.09~99.06)

國立交通大學電子研究所碩士班(99.09~102.5)

碩士論文題目：

以半導體光放大器實現波長可調外腔式雷射

Tunable External Cavity Quantum Dot Laser with Semiconductor Optical Amplifier