奈米 In 金屬有著低熔點、超導、有機催化反應及顯著的 SPR 現象等性質，
相信在光學 SPR 感測元件有著相當大的應用與發展潛力。未來亦可進一步以合 成好的 In 奈米粒子，取其高還原電位與低熔點等特性，結合 Galvanic 取代法與 SLS 機制來進一步合成，奈米合金、奈米複合材料等，開發出更多有趣且具特殊 性質與應用之奈米材料。
而 In-In2O3(core-shell)奈米結構的控制，亦有著光電元件方面的應用潛力。
未來若改控制在真空條件下，以低溫燒結方式，將各個獨立的 In 奈米粒子熱熔 接方式連接起來(類似 necking 粒子與粒子間的特殊結構)，在改至原大氣氣氛氧 化，即可控制形成(In-In)n-In2O3(core-shell)的特殊奈米結構，由於內部 In 金屬具 高導電性，而外部 In2O3具保護性，此特殊結構可應用於光電元件研究中。另外 對發光元件之應用，可取本實驗之 In 奈米合成簡易且快速之便，進一步研究在 各不同氧化條件下，開發出更多更穩定且發不同波段之 PL 發光材料。
最後在本文討論中未提及發現 In2O3的熱致變色現象(附錄、四)，可進一步 藉由可變溫之 XRD 分析，了解溫度與內應力存在下，所引發相變化的可能性。
由於此熱致變色是可逆的，且隨著溫度越高顏色變化越明顯，未來對於高溫或防 火的警示材料開發具有潛力，例如開發成鍋爐上的熱溫變色貼紙。
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附錄、一
氧化百分比之 XRD 模擬計算
In 奈米粒子的氧化百分比計算方法:將各氧化溫度下，隨時間變化之 In 與 In2O3之 XRD Peak，取 In 與 In2O3 最強兩個繞射晶面(101)與(222)如下圖 XRD pattern 所示，經 fitting 計算出兩 XRD 繞射晶面之積分面積強度比。再藉由積分 強度比可進一步計算轉換為體積比，得到 In 與 In2O3的體積比後，即可進一步推 算得到 In 奈米粒子的氧化百分率。
XRD patterns for as-prepared core-shell of In-In2O3–Nano-particles at 250°C, 5.5hr.
20 30 40 50 60 70 80
222
In2O3 JCPD # 06-0416 101
intensity (a.u.)
250oC 5.5 hr
2 theta (deg.)
In JCPD # 05-0642
137
138
附錄、二
Rietveld 模擬分析
Rietveld 模擬計算分析是利用最小二乘方法(least square method)對分析物 作晶體結構數據的精算化，經多次重複計算直到偏差值收斂為止，過程為導入 中逐點計算波強度 Yi(cal)與測量值 Yi(obs)相互比對，使 ΣWi[Yi(cal)-Yi(obs)]2之 值為最小。其中 Wi 為函權重(weigh),Yi(cal)的定義如下：
Yi(cal) = (ΣS∙Mk∙LPk∙Ik)(PF)
K : 第 i 個點數據中第 k 個布拉格反射部份 S : 尺度因子 (Scale factor)
Mk : 倍數因子 (Multiplicity factor)
LPk : 勞倫茲極化因子(Lorentz-polarization factor) Ik : 布拉格強度(Bragg intensity) 優選配向參數(Preferred orientation parameter)：P1，P2
半高寬參數(FWHM parameter)：U，V，W 儀器零點(Zero-point shift of the counter)：Z
背景參數(Background parameter)：b0，b1，b2，b3，b4，b5 結構參數：與繞射強度有關
139
原子座標位置(Fractional coordinate)：X，Y，Z 空間位置佔有因子(Occupation factor)：G
全部等相熱參數(Allover isotropic thermal parameter)：Q 等向熱參數(Isotropic thermal parameter)：B
非等向熱參數(Anisotropic thermal parameter)：B11，B22，B33，B12，B13，B23
對稱波形函數 pseudo-Voigt function: g( θik) = C{γexp[-4ln2[2 θik /Hk(G)]2]+(1-γ) [1+4[2 θik /Hk(L)]2]-1}
其中 C = [( 4ln2)1/2γHk(G)+ (1-γ)Hk(L)/2]-1 Hk(G) = [U(tanθk-CS)2+V(tanθk-CS)+W]1/2 Hk(L) = Hk(G)
g( θik)：對稱波形函數(Symmetrical profile shape function)
θik ：第 i 點和第 k 點的布拉格角度差
函權波形 R 因子(weighted profile R-factor) Rwp={Σwi(yi(obs)-yi(cal))2 Σwi(yi(obs))2}1/2 波形 R 因子(profile R-factor)
Rp=Σ│yi(obs)-yi(cal)│ Σyi(obs) 布拉格 R 因子(Bragg R-factor) RB=Σ│Ik(obs)-Ik(cal)│ ΣIk(obs) 結構 R 因子(structure R-factor)
RF=Σ│(Ik (obs)1/2- Ik (cal)1/2) │ Σ(Ik (obs))1/2
Ik：自 Yi(obs)和 Yi(cal)間接求得的反射 k 之積分強度測量值
一般而言 Rwp值必頇在 0.2(20%)以內始可採用，若偏差值在 0.1(10%)以內則代表 精算結果相當良好，而 Rp和 RB(=RI)的值可達到 0.05(5%)以下。
140
141
附錄、三
團聚成片狀 In 奈米結構
事實上此結構為測詴合成蟲蝕奈米球體的參數時，失敗所合成出來的 In 奈
事實上此結構為測詴合成蟲蝕奈米球體的參數時，失敗所合成出來的 In 奈