未來發展方向

為了成功將κ 值降低至 2.5 以下，且又能夠整合至現今半導體製程 技術之中，Solid-First^TM為一非常有潛力的製程方式。惟目前產學界對 此一新式製程與兩相式材料瞭解甚少，故仍然有許多問題需要探討，

如：

1. 對於兩相式與多孔性材料系統吸水性質之完整比較，以及水氣於此 兩種材料系統中擴散行為探討。

2. 兩相式與多孔性材料介電性質之探討，如孔隙率對介電常數之影響 3. 其它薄膜性質之量測，如界面強度（adhesion）、薄膜應力（film

stress）或蝕刻（etching）特性之研究。

4. 高溫起孔洞劑之「分子量」、「化學結構」對孔洞大小、孔洞形狀以 及熱裂解溫度之影響。

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