• 沒有找到結果。

Fig. 1:HMJ-53A 加速 N2A 細胞 Kv 電流慢性鈍化現象

N2A細胞的holding potential是-70mV,連續給予+30 mV去極化 刺激(持續3.5秒,間隔時間為20秒)。從結果中每一次刺激的電流 最高往最低點fit位置,而得到衰退 τ。

(A)典型的K+ 電流外流曲線,被+30mV去極化引起,分別於0秒和 經過600秒後,且未加任何藥物。

(B) 衰退時間常數從(A)圖得之,每個時間點被plot出 。

(C)典型的K+ 電流外流曲線,被+30 mV引起,加入HMJ-53A (30 μM) 之前後之記錄。

(D)衰退時間常數從(C)圖得之,於未加及已加HMJ-53A(30 μM)後之 每個時間點plot出。

(E)典型的K+ 電流外流曲線,被+30 mV引起,記錄於未加及已加 HMJ-53A(30 μM),和從細胞外沖洗走HMJ-53A後,得之的曲 線。

(F)衰退時間常數從(E)圖得之,於未加、已加及沖洗走HMJ-53A (30 μM)之每個時間點plot出。

以上實驗得到的結果,可重複次數皆多於三個細胞以上。

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52

Fig. 1

Fig. 2:HMJ-53A 抑制 Kv 電流濃度依賴曲線

細胞的 holding potential 為-70mV,連續給予+30mV 去極化刺 (持 續3.5 秒,間隔時間為 20 秒)。再加入不同濃度的 HMJ-53A (3、

6、10、18 及 30 μM),並給予同樣的刺激,記錄穩定狀態之 Kv 電流。

把標準化之穩定狀態電流(已加藥/未加藥),作 Y-軸,並把 HMJ-53A 之濃度作 X-軸。

曲線用 Hill 方程式 fit 之。結果為 mean ± SEM,從 3 至 6 個細胞 得之。

53

Fig. 2

54

Fig. 3:HMJ-53A 在轉殖 Kv2.1 後之 N2A 細胞上,加速 Kv 電流慢性鈍化現象

在已轉殖 Kv2.1 之 N2A 細胞,holding potential 為-70 mV,給予 連續+30 mV 去極化刺激(持續 3.5 秒,間隔時間為 20 秒)。得到 K v2.1 電流,再加入 HMJ-53A (30 μM)。曲線分別為未加藥及加藥 後 12 分鐘。

以上實驗得到的結果,可重複於三個細胞上。

55

56

Fig. 3

Fig. 4:從 N2A 細胞內加入 HMJ-53A 並不影響 Kv 電流之 慢性鈍化

(A) 在微細玻璃管電極之細胞內液中(細胞內)加入HMJ-53A (30

μM)。細胞的 holding potential是-70 mV,給予連續+30 mV去極 化刺激(持續3.5秒,間隔時間為20秒)。得到典型的K+ 電流外 流曲線,從0 分鐘至15 分鐘記錄。

再從細胞外,加入HMJ-53A (30 μM),皆在同一個N2A細胞上進 行,得之曲線。

(B) 從結果中每一次刺激的電流最高往最低點fit,而得到衰退 τ。

衰退時間常數從(A)圖得之,於未加及已加HMJ-53A (30 μM)之每 個時間點plot出。

以上實驗得到的結果,可重複於三個細胞上。

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58

Fig. 4

Fig. 5:HMJ-53A作用於N2A細胞之Kv通道之關閉階段:

(A) 細胞的holding potential為-70 mV,給予第一次+30mV去極化,

得之曲線。隨後給予此細胞HMJ-53A (30 μM),等待4分鐘,並 此期間未給予任何去極化刺激。

(B) 此細胞給予第二次+30mV去極化,並記錄其曲線。

(C) 以灌流方式,從細胞外沖洗走HMJ-53A,並連續(持續3.5秒,

間隔時間為20秒)給予+30mV去極化並記錄其曲線。

以上實驗得到的結果,可重複在多於三個細胞以上。

59

Fig. 5

60

Fig. 6:HMJ-53A加劇電流之衰退,沒有電壓依賴性

(A) 細胞的holding potential為-70 mV,開始給予刺激,一次持續10 s,

間隔10秒,每增加10 mV刺激一次,至+100 mV為止,停止刺激。

得到典型的K+ 電流外流曲線,被不同的電壓去極化引起。

(B) 加入HMJ-53A (30 μM),經過15分鐘後;同(A)刺激方式,測量 記錄曲線。得到典型的K+ 電流外流曲線,被不同的電壓去極化 引起。

(C) 從每一次刺激的電流之最高往最低點fit之,而得到衰退 τ。衰 退時間常數根據每個不同的去極化電壓plot出。

每一組結果的mean ± SEM,從4個細胞中得到。

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62

Fig. 6

Fig. 7:HMJ-53A 阻斷 Kv 電流之強度不受電壓與細胞 內鉀離子濃度影響

(A) HMJ-53A (10 μM)阻斷穩定狀態 Kv 電流之百分比,根據每個不

同的電壓下 plot 出。

細胞的holding potential 為-70mV,開始給予刺激(一次持續 10 秒,間隔10 秒),每增加 10mV 刺激一次,至+100mV 為止,

停止刺激。再比較兩組其每個電壓中抑制的電流百分比(已加 藥/未加藥電流)×100%,所得到此曲線。

(B) HMJ-53A (10 μM)阻斷穩定狀態之Kv電流百分比。

兩組:微細玻璃管電極內(表示細胞內)鉀離子濃度分別為140 mM 和70 mM,細胞的 holding potential為-70mV,給予連續+30 mV去極化刺激(一個刺激持續3.5秒,間隔時間20秒)。抑制的 電流其百分比(已加藥/未加藥電流)×100%,再比較兩組的差 異。

(C) 在細胞內鉀離子濃度分別為 70 和 140 mM 時,Kv 電流的衰退時

間常數 [以加及未加 HMJ-53A (10 μM)]。

微細玻璃管電極內(表示細胞內)鉀離子濃度分別為140 mM和 70 mM。細胞的 holding potential是-70mV,給予連續+30 mV去

63

極化刺激,(一個刺激持續3.5秒,間隔時間為20秒)。再分為 未加及已加HMJ-53A(10 μM)兩大組,從結果中的電流最高至最 低點fit之,而得到衰退 τ。

每一組結果之mean ± SEM,從4至5個細胞中得到。

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65

Fig. 7

Fig.8:TEA對電流衰退之影響與HMJ-53A不同

(A) 細胞的holding potential為-70 mV,給予連續+30 mV去極化刺激,

(一個刺激持續3.5 秒,間隔時間為20秒)。得到典型的K+ 電 流外流曲線,再加入TEA (3 mM)(20秒和600秒後)。

(B) 衰退時間常數:比較未加及已加TEA (3 mM)的結果。於電流最 高至最低點fit之,為於每個時間點之衰退 τ。

以上實驗得到的結果,可重複於三個細胞上。

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67

Fig.8

Fig. 9:HMJ-53A 使穩定狀態之鈍化曲線左移 但不影響活化閥門

(A) 已加及未加HMJ-53A (30 μM)之N2A細胞中,進行Kv通道電流測

量,得之穩定狀態之鈍化曲線。在此實驗使用dual-pulse流程(給 予一次pre-pulse,再給予第二次短的pulse)做測量。

細胞的holding potential是-70 mV,先給予pre-pulse刺激(持續 10 s),再給予一個+70 mV的test pulse。休息10秒後,接著下一 個dual-pulse刺激 (於pre-pulse,每次增加10 mV),刺激至 pre-pulse為+100 mV,停止刺激。

而test pulse電流與最大之test pulse電流作標準化,兩組曲線比 較其差異。因為在對照組產生‘‘U型鈍化’’現象,所以只從-80至 +50mV fit(Boltzmann方程式)。結果之mean ± SEM從每組中4 個細胞中得之。

(B) 活化電壓依賴性:Kv 電流被不同電壓去極化刺激,而這些不同

的電壓,從holding potential為-70mV開始,每增加10mV刺激一 次(一次持續0.5秒,間隔2秒),至+70mV止。

Conductances (G)(conductance計算於材料方法中說明)在對 照 組 和 加 入HMJ-53A 組 中 , 分 別 與 各 自 最 大 的 conductance

68

(Gmax)作標準化,在不同的去極化刺激下plot出結果。而此曲線 是以Boltzmann方程式去fit之。結果之mean ± SEM從每組中6個 細胞中得之。

(C) 較 早 階 段 的 電 流 traces 代 表 活 化 之 kinetics 。 細 胞 的 holding

potential為-70mV,給予連續+30 mV去極化刺激(一個刺激持續 3.5 秒,間隔時間20秒),再加入HMJ-53A。而標準化這兩組並 重疊其電流,來比較未加及已加HMJ-53A這兩組。

(D) 同 (C) 之 刺 激 方 式 , 活 化 時 間 常 數 乃 於 電 流 上 升 階 段 作

exponential fit,於不同的去極化電壓,再plot出結果。而得到兩 組(未加及已加HMJ-53A)的活化曲線。

每組結果的mean ± SEM,從6至8個細胞中得到。

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70

Fig. 9

Fig. 10:HMJ-53A不影響Kv電流之恢復

電流恢復實驗於N2A細胞中進行,用dual-pulse 流程,細胞的 holding potential為-70 mV,給予第一次pulse(+30 mV,持續5秒),

然後第二次pulse(+30 mV,持續200 ms);第一次pulse與第二次 pulse間隔時間不同。

把第二個電流 (I2)與第一個電流 (I1)的最大值作標準化(I2/I1)。

再把此標準化結果根據不同之時間間隔而plot之。而此曲線用 double-exponential功能去fit。

兩組的結果的mean ± SEM,從每組中4個細胞中得到。

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72

Fig. 10

Fig. 11:HMJ衍生物抑制Kv電流之濃度依賴性曲線

N2A細胞holding potential為-70 mV,給予連續+30 mV去極化刺激

(持續3.5秒,間隔時間20秒)。再加入HMJ-1 (30 μM),得之電流,

與未加入HMJ-1最大的穩定狀態電流作標準化,再plot出此點。

同上刺激方式,分別加入不同濃度(3、6、10、18 及 30 μM)之 其它 HMJ 衍生物,得到之最大的穩定狀態電流與未加入 HMJ 衍生 物之最大的穩定狀態電流作標準化(Idrug/Icontrol),並依藥物之 濃度作 X 軸而 plot 之,曲線用 Hill 方程式 fit 之。

每組的結果 mean ± SEM,從 3 至 6 個細胞得之。

73

Fig. 11

74

100

1 10

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Idrug/Icontrol

Drug ( μ M)

HMJ-29A

HMJ-73A

HMJ-53A

HMJ-1

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錄一:

SCI 期刊之

文章發表

HMJ-53A accelerates slow inactivation gating of voltage-gated K

þ

channels in mouse neuroblastoma N2A cells

Chia-Chia Chao

a

, Jeffrey Shieh

b

, Sheng-Chu Kuo

c

, Bor-Tsang Wu

d

, Mann-Jen Hour

b,**

, Yuk-Man Leung

a,e,*

aDepartment of Physiology, China Medical University, Taichung 404, Taiwan, ROC

bSchool of Pharmacy, China Medical University, Taichung 404, Taiwan, ROC

cGraduate Institute of Pharmaceutical Chemistry, China Medical University, Taichung 404, Taiwan, ROC

dDepartment of Physical Therapy, China Medical University, Taichung 404, Taiwan, ROC

eGraduate Institute of Neural and Cognitive Sciences, China Medical University, Taichung 404, Taiwan, ROC

a r t i c l e i n f o

Article history:

Received 7 January 2008

Received in revised form 10 March 2008 Accepted 12 March 2008

Keywords:

HMJ-53A

Voltage-gated Kþchannels C-type inactivation Electrophysiology Nerve cells

a b s t r a c t

Voltage-gated Kþ(Kv) channels are important in repolarization of excitable cells such as neurons and endocrine cells. Kv channel gating exhibits slow inactivation (slow current decay) during continuous depolarization. The molecular mechanism involved in such slow inactivation is not completely un-derstood, but evidence has suggested that it involves a restriction of the outer channel pore surrounding

Voltage-gated Kþ(Kv) channels are important in repolarization of excitable cells such as neurons and endocrine cells. Kv channel gating exhibits slow inactivation (slow current decay) during continuous depolarization. The molecular mechanism involved in such slow inactivation is not completely un-derstood, but evidence has suggested that it involves a restriction of the outer channel pore surrounding

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