• 沒有找到結果。

5-1. 結論

1. 透過穿透式電子顯微鏡(TEM)確立合成出大小均勻、尺寸約為 3~5 奈米的 氧化鎳奈米粒子。

2. X-射線繞射分析(XRD)確立了溴化銫鉛發光層為鈣鈦礦晶體結構。

3. 透過原子力顯微鏡(AFM)分析,加入 PEO 顯著提升溴化銫鉛鈣鈦礦發光層 厚度,加入 TPBi 及 FirPic 使溴化銫鉛鈣鈦礦薄膜粗糙度下降。

4. 加入 PEO、添加劑 TPBi 及 FirPic 和甲苯蒸氣處理皆能提升元件性能。

5. 以氧化鎳奈米粒子作為電洞注入層比較 PEDOT:PSS 作為電洞注入層能大幅 降低元件的啟動電壓及漏電流、提升元件的最大亮度及效率。

6. 透過紫外光臭氧處理氧化鎳奈米粒子表面提升了元件的性能。

7. 優化電洞注入層及溴化銫鉛鈣鈦礦發光層成功使元件的啟動電壓從接近 4 伏特降至低於 2.5 伏特、漏電流減少近 2 個數量級、最大亮度從 61 cd/m2 提升至 4,455 cd/m2,電流效率從 0.04 cd/A 提升至 2.9 cd/A,優化後的元件 具有再現性。

44 5-1. 未來展望

雖然已透過加入添加劑來優化溴化銫鉛鈣鈦礦發光層、表面處理優化氧化鎳 奈米粒子電洞注入層,大幅提升溴化銫鉛鈣鈦礦發光二極體的性能,但是目前的 無機溴化銫鉛鈣鈦礦的亮度及電流效率仍然遠不及 OLED、QLED 或是有機-無機 混合的甲基胺基溴化鉛(CH3NH3PbBr3)鈣鈦礦發光二極體,希望透過更深入的研究 提升溴化銫鉛鈣鈦礦發光二極體的性能:

1. 最佳化溴化銫鉛鈣鈦礦發光層:最佳化溴化銫鉛鈣鈦礦粉末及溴化銫粉末及 PEO、TPBi、FirPic 的比例並透過原子力顯微鏡(AFM)分析其表面。

2. 深入探討不同時間氧電漿處理及紫外光臭氧處理影響元件性能的原因,例如:

透過 X-射線光電子能譜(XPS)分析其組成、紫外光電子能譜(UPS)分析能階、

時間解析光激發光光譜(Time-Resolved Photoluminescence, TRPL)分析淬滅。

45

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