第五章 第五章
第五章 結論 結論 結論 結論
我們以雙加熱器有機金屬氣相沉積系統調變上加熱板及成長溫度磊晶 成長氮化銦鎵薄膜。在調變上加熱板溫度從無加熱到加熱 700 至 950 oC 成 長的樣品系列中，銦組成隨上加熱板溫度提高而降低，以成長效率分析得 知銦組成降低主要來自氮化銦的成長效率下降，比對調變下加熱板溫度造 成的氮化銦成長效率變化，我們認為上加熱板溫度從 700 增加到 900oC 時，
氣相溫度提高所引發的寄生反應影響較低，表面溫度提高引起的銦脫附可 能才是氮化銦的成長效率下降的主要原因。(002)面對稱繞射半高寬降低，
我們認為是低成長溫度(625 oC)下，降低表面原子移動能力，減少銦原子聚 集效應，進而改善組成均勻性。利用上加熱板溫度的提升至 800oC，我們改 善了以往較低成長溫度造成發光強度衰減問題，將深紅光(700nm)波長氮化 銦鎵薄膜推展至不遜色於藍綠光波段(490nm)的光學品質，我們認為是在低 成長溫度成長下易伴隨形成的氮空缺相關缺陷及雜質鎔入，可透過提高上 加熱板溫度來抑制。
參考文獻 參考文獻 參考文獻 參考文獻： ： ： ：
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