(一)在摻雜與相分佈對機械性質的影響中，三價稀土族與五價陽離子共摻雜 (co-doping) 並配合Vegard’s law評估，使我們容易掌握其相的比例與相變化行 為，以使材料的機械性質與電性皆有相當優異的表現。觀察共摻雜時，發現摻雜 的三價陽離子之離子半徑大小將影響相穩定性；當陽離子越大，其對相穩定的能 力越差；摻雜RENbO4於氧化鋯(3Y)會使其電解質擁有極佳的機械性質，但摻雜 的三價稀土族離子RE3+半徑若大於臨界尺寸(YNd3+=0.945nm)時，則容易發生 t-to-m相變化，此時材料的機械性質與電性將急遽下降。
(二)在微觀結構的分析中，對三價、五價陽離子共摻雜(co-doping)進行三價陽離 子不同離子半徑的添加的參數變化，發現三價陽離子之離子半徑大小將影響摻雜 的行為，而當陽離子越大，則其對相穩定的能力越差，因此c-t 與 t-m 相變化溫 度也不易降低，使得共同摻雜中陽離子半徑越大的材料，c 相與 t 相之間的晶粒 差異越小，因為其過冷度過小的關係，且m 相越容易出現。
(三)在新相變行為的分析中，亦發現了一些有別於t-to-m的相變機制，利用同步 輻射臨場壓應力-繞射試驗與穿透式電子顯微鏡所發現的新相變化c(t’)-to-m’，皆 會於此類型的氧化鋯(3Y)或氧化鋯(3Y)添加鈮酸釔(YNbO4)或RENbO4中生成，且 破壞後不會有t-to-m相變化亦不會有Ferroelastic domain switching產生。
(四) 在電性的分析中發現，經過RENbO4的添加，其電性於 800℃的工作環境可 與SDC之電性相提並論，且電性較 3Y-TZP與 8YSZ佳。而離子半徑越接近基材 (ZrO2)，而且(ReNb)0.5與基材(ZrO2)計算所得到的ABE(平均束縛能)為最小時，達 到最大的氧空缺量時，符合這三點的氧化鋯摻雜RENbO4系統材料將有十分優異 的離子導電性；因此藉由RENbO4之添加配合摻雜的控制，我們研發出一種具有 極為優異的機械性質與電性的電解質，十分有利於間歇操作下延長電池的壽命，
其也將用以取代8YSZ作為SDC之抗還原層。
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