結論

(四) 電性量測

1. 利用介電泳排列奈米線在轉印後之電極上，其奈米線與金接觸不良，

且厚度較厚，導致電性特性不佳。

2. 利用光固化阻劑製作黏著層(介電層)，用轉印的方法將奈米線與金電 極同步轉移到基材上，確保奈米線與金電極有較良好接觸。經由轉印製 作奈米線電晶體其元件特性為臨界電壓V_th為3V，on/off ratio 約為 6，載 子傳輸速率μ 為 348.4cm²/Vs，轉移電導值 g_m為2.55μS，次臨界擺幅 S 為3.72V/dec。

3. 利用複合式絕緣層可改善電性特性，使得量測電流電壓曲線較為穩 定。因此，在後續研究中可以尋找高介電常數低漏電流的材料製作複合 是絕緣層，提高電晶體的電性特性。

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