本論文中，我們藉由元件的阻抗量測分析，推估其主動層的 SRH 復合速率、
輻射復合速率、歐傑復合速率。量測的實驗樣品分別為 1.5μm-QWLD1490、
1.3μm-QDLD936 以及 430nm-BlueQWLD，萃取出來的復合速率參數如表 5.1 所 示，與找到的文獻相比是相當接近的，說明我們所建立的阻抗量測分析的方式應 該是相當成功的，未來可將其應用在量測新型的雷射結構上。
𝝀(𝝁𝐦) 𝑨(𝟏/𝒔) 𝑩(𝒄𝒎𝟑/𝒔) 𝑪(𝒄𝒎𝟔/𝒔) QWLD14 0 1.5 8.08 × 10 4. 6 × 10−11 5.63 × 10−29
QDLD 36 1.3 ~10 ~10−11 ~10−29 BlueQWLD 0.43 ~10 10−12~10−11 10−31~10−29
表 5.1 QWLD1490、QDLD936 以及 BlueQWLD 的復合速率參數
然而，我們的阻抗分析技術其實還存在著三大問題尚須要去克服。
建立多速率方程式(multi-level rate equation)
由於本論文中，我們忽略載子在量子井或量子點內的捕捉與逃離效應，導致 參數𝑅𝑠與參數𝐿隨電流的變化無法給予明確的解釋，甚至有可能因此影響到復合 係數的精準度，所以未來需要建立多速率方程式模型來考慮載子的捕捉與逃離效 應。
封裝寄生阻抗
封裝阻抗也應當加入到電路模型中，本論文的樣品在未考慮封裝阻抗的模型
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下都能擬合得很好，但是有些元件卻不是如此，圖 5.1 為一藍光 LED 的 Re{Z}
圖，可以明顯看到實驗點與理論模型有極大的不一致，這個問題將嚴重的限制可 量測的樣品。
1 10 100
0 5 10 15 20 25
0.9mA
Re{Z}(ohm)
frequency(MHz)
Rs=3.035(ohm) Rd=20.383(ohm) Td=67.948(ns)
圖 5.1 藍光 LED 的 Re{Z}圖
元件控溫
我們曾經嘗試自製過適合 HP4291B 阻抗分析儀的控溫銅座，但是卻會造成 阻抗量測出現異常的雜訊，導致無法分析，所以如何在不影響量測的前提下控溫，
將是未來努力的目標。未來將針對這三個問題去做改進。
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簡歷 (Vita)
姓名：馬江智 (Jiang-Jhih Ma)
性別：男
出生年月日：民國 75 年 12 月 15 日
籍貫：台灣桃園
學歷： 桃園縣國立中壢高級中學 ( 91.9 ‐ 94.6 ) 中興大學電機工程學系學士 ( 94.9 ‐ 98.6 ) 交通大學電子研究所碩士班 ( 98.9 ‐ 101.6 )
碩士論文題目：
以阻抗特性量測來分析半導體發光元件之微分載子生命期
Analysis of differential carrier lifetime in semiconductor light emitting devices by impedance measurement