本篇論文是利用光調制(PR)實驗方法,對四元化合半導體材料氮 銻砷化鎵(GaAsSbN)的調制訊號,來做探討。並藉由改變溫度來觀察訊 號隨溫度變化的情形。
對於氦氖雷射調制的實驗結果所觀察到能量介於 1eV 與 1.3eV 的 調制訊號,藉由使用勞倫茲調制譜形的擬合，得到了兩個不同結構的 躍遷能量。在引用了較新的觀念 Double BAC model 對擬合得到的兩 個躍遷能量做比對後,得知能量較高的躍遷能量是氮銻砷化鎵的能 隙。至於擬合所得到的能量較小的躍遷能量，由於兩躍遷能量的差值 與文獻中提及的侷限能量大小接近，所以推測此躍遷能量是侷限能態 的平均躍遷能量。
此外我們參考了一些對於處在侷限態的載子隨溫度變化的相關 理論分析與模型，了解到在光調制(PR)實驗裡，當溫度增加時，侷限 能態會逐漸被載子填滿，因此得知為何擬合所得到的兩個躍遷能量，
隨著溫度的增加會越來越靠近，以及在溫度較高的情況下，侷限能態 的調制訊號相對於能隙的調制訊號，其調制訊號的強度會隨著溫度增 加越來越小。
對於能量範圍在 1.35 eV 到 1.55 eV 之間所觀察到的調制訊號，
以砷化鎵能隙為基準，將其分成兩部分來探討。能量大於砷化鎵能隙
的震盪譜形，使用 FKO 分析，求出 30K 到 300K 之間的內建電場值。
得知內建電場隨著溫度增加而變大。至於譜峰能量小於砷化鎵能隙的 譜形結構，我們推測，此結構可能是在界面附近的砷化鎵，受到些微 從氮銻砷化鎵擴散到界面附近的銻與氮的摻雜，銻與氮的含量皆較低 的氮銻砷化鎵，所產生的調制訊號。
藉由比較使用氦氖雷射調制與綠光雷射調制,兩不同波長雷射調 制的實驗結果,確定了我們所觀察到的訊號來源。在能量介於 1eV 到 1.3eV 的訊號來自氮銻砷化鎵本身,而在範圍介於 1.35eV 與 1.55eV 之間的 FKO 振盪譜型,來自於氮銻砷化鎵與砷化鎵基板的界面附近。
另外，在比較了各個不同濃度樣品的能隙值大小，能得知對氮銻砷化 鎵而言，所摻入的銻與氮的濃度，控制著能隙縮減的程度。
不同摻雜濃度的三片樣品
GaAs
0.975Sb
0.012N
0.013、GaAs
0.962Sb
0.025N
0.013與008 . 0 054 . 0 938 .
0
Sb N
GaAs
，在不同的溫度範圍內，其侷限能態的調制效益相 對於能隙的調制效益，皆會隨著溫度上升而有增強的現象，對此需要 更深入的研究來釐清其機制與原因。參考文獻
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