7-1、結論
綜合前面以水溶液法成長ZnO相關薄膜的實驗分析與結果，可以歸納以下 幾個結論。
1. 水溶液之製備需添加適量之非離子型複合界面活性劑(polyethylene glycol trimethylnonyl ether) 於醋酸鋅及醋酸鎂中，以旋轉塗布、烘烤及退火之製 程，可以在玻璃基板上成功的成長ZnO薄膜與Zn1-xMgxO薄膜；而界面活性 劑於硝酸鋅與硝酸銦中，則可以獲得Zn1-xInxO薄膜。
2. 在ZnO薄膜內摻雜或添加其他元素(Mg、In)進入薄膜內，薄膜元素之濃度跟 原始溶液之比例相當，有助於精確的控制薄膜組成。
3. ZnO薄膜經過300-500℃退火後，發現退火溫度在500℃以上時，薄膜的品質 較佳且表面平整度較佳，而低溫退火薄膜會有波浪皺摺出現。ZnO薄膜為 結晶品質較差的多晶薄膜，且沒有特定的優選方向，而薄膜穿透率在可見 光區可大於85%。而在ZnO TFT元件部分，雖然有元件特性，但因為薄膜本 身品質缺陷較多，造成元件特性不佳。
4. 在Zn1-xMgxO薄膜方面，Mg的摻雜使ZnO的薄膜有變得較緻密的趨勢；而 Zn1-xMgxO薄膜在500℃退火後的光穿透率在波長400~800nm的光波長範圍 內可大於90%，高於ZnO薄膜。
5. 摻雜Mg進入ZnO薄膜中的最大量約為40%；另外，ZnO薄膜的光能隙會隨
著Mg的摻雜量增加而提高，而且ZnO薄膜的電阻係數也會隨Mg的量增加而 500/50，所測得之臨界電壓約為-7V (Vd=30V)，載子遷移率μ約為0.8cm2/Vs，
Id電流值約10-6 A，Ion/off約104。
附錄一、ZnO JCPDS powder pattern.
No. 36-1451:
附錄二、In2O3 (6-0416)、Zn2In2O5 (20-1442)、Zn4In2O7 (20-1438)、Zn5In2O7
(20-1440) JCPDS powder patterns :
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