5-1 結論
本研究成功在矽基材上利用二階段陽極氧化處理製備出孔洞直徑 75nm，長度 500~800nm的高規則AAO模板，並以電鍍法在AAO模板內選擇 性沉積出鈷的奈米柱與奈米點；此外，鈷的奈米點可做為觸媒，使用 ECR-CVD，在 600℃下以CH4及H2為製程氣體，配合AAO模板的輔助，合 成高準直性的多壁奈米碳管陣列，其中CNT的管徑大小及方向，受到AAO 模板所規範。若調整ECR-CVD合成時間，可控制CNT長度；若改變電鍍鈷 時間，在鋁膜上，CNT密度隨電鍍鈷時間增加而下降；在AAO模板上，CNT 密度隨電鍍鈷時間增加而增加，當電鍍鈷時間60 秒時，得到最佳CNT場發 射特性，其起始電場為5.88V/μm，場發射增強因子β值為 1135。本研究亦 成功製備出AAO-CNT的三極結構，利用AAO模板的輔助，其CNT方向具準 直性、密度有可控性。本研究亦能直接在4 吋晶圓上製備出AAO-CNT，未 來的目標是在4 吋晶圓上成功的製備出AAO-CNT三極體結構。
5-2 未來展望
1. 調整 CNT 製程參數及掌控 AAO-CNT 的成長製程，尋求最佳場發射特 性，再以不同電鍍鈷時間改變CNT 密度，探討其場發射變化。
2. 對 AAO-CNT 三極體結構做電性量測。並在三極體結構內，改變 CNT 長度，在維持低表面粗糙度的原則下，探討CNT 長度與場發射的關聯 性。以電鍍鈷時間改變CNT 密度，尋求最佳 AAO-CNT 三極體結構場 發射特性的製程參數。
參考文獻
[1] A. P. Li, F. Müller, A. Birner, K. Nielsch, U. Gösele, J. Appl. Phys., 84 (1998) 6023.
[2] Itoh, N., Kato, K., Tsuji, T., Hongo, M., J. Membrane Sci., 117 (1996) 189.
[3] Sui, Y.C., Cui, B.Z., Martínez, L., Perez, R., Sellmyer, D.J., Thin Solid Films., 406 (2002) 64.
[4] Xinyi Zhang, Baodian Yao, Lixia Zhao, Changhao Liang, Lide Zhang, Yongqiang Mao, J. Electrochem. Soc., 148 (2001) G398.
[5] Hiroaki Imai, Yuko Takei, Kazuhiko Shimizu, Manabu Matsuda, Hiroshi Hirashima, J. Mater. Chem., 9 (1999) 2971.
[6] Y. Lei, L. D. Zhang, G. W. Meng, G. H. Li, X. Y. Zhang, C. H. Liang, W.
Chen, S. X. Wang, Appl. Phys. Lett., 78 (2001) 1125.
[7] Y. C. Choi, S. C. Lim, D. J. Bae, Y. H. Lee, B. S. Lee, G. S. Park, W.B. Choi, N. S. Lee, J. M. Kim, J. Vac. Sci. Technol. A, 18 (2000) 1864.
[8]O. M. Kuttel, O. Groening, C. Emmenegger, L. Schlapbach, Appl. Phys. Lett., 73 (1998) 2113.
[9] L. C. Qin, D. Zhou, A. R. Krauss ,D. M. Gruen, Appl. Phys. Lett., 72 (1998) 3437.
[10] Y. H. Lee, S. G. Kim, D. Tománek, Phys. Rev. Lett., 78 (1997) 2393.
[11] Yuan. Cheng, Otto Zhou. Physique, 4 (2003) 1021.
[12] Nilsson, L., O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L.
Schlapbach, H. Kind, J.-M. Bonard, K. Kern, Appl. Phys. Lett., 76 (2000) 2071.
[13] Xin Wang, Gao-Rong Han, Microelectronic Engineering, 66 (2003) 166.
[14] Hideki Masuda, Haruki Yamada, Masahiro Satoh, Hidetaka Asoh, Masashi Nakao, Toshiaki Tamamura. Appl. Phys. Lett., 71 (1997) 2770.
[15] Wang, Z., Su, Y.-K., Li, H.-L, Appl. Phys. A., 74 (2002) 563.
[16] N. V. Gaponenko Synthetic Metals, 124 (2001) 125.
[17]Yu Cheng Sui, Jose M. Saniger Materials Letters, 48 (2001) 127.
[18] Y. Li, G. W. Meng, L. D. Zhang, F. Phillipp, Appl. Phys. Lett., 76 (2000) 15.
[19] F. Keller, M. S. Hunter, D. L. Robinson, J. Electro. Soc. 100 (1953) 411.
[20] Dmitri Routkevitch, Alexander N. Govyadinov, Peter P. Mardilovich, MEMS. 2 (2000) 39.
[22] Jessensky O., F. Mu¨ ller, U. Go¨sele, Appl. Phys. Lett., 72 (1998) 1173.
[23] G.E. Thompson, Thin solid films, 297 (1997) 192.
[24] S. K. Thamida, H. C. Chang Chaos, 12(1) (2002) 240.
[25] 陳思安, 陽極氧化電壓及冷封之諸因素對鋁陽極氧化膜的影響，碩士論文，大同大 學,1997
[26] 尤光先編譯,“鋁的陽極處理技術”,徐氏基金會,民72.
[27]Materials Science and Engineering R, 43 (2004) 103.
[28] Yu-Guo Guo, Li-Jun Wan, Chuan-Feng Zhu, De-Liang Yang, Dong-Min Chen, Chun-Li Bai, Adv. Mater.,15 (2003) 664.
[29] E.J. Bae, W.B. Choi, K.S. Jeong, J.U. Chu, G.-S. Park, S. Song, I.K. Yoo, Adv. Mater. 14 (2002) 277.
[30] Hattori Y., Watanabe Y., Kawasaki S., Okino F., Pradhan B.K., Kyotani T., Tomita A., Touhara H., Carbon, 37 (1999) 1033.
[31] W. Xu, T. Kyotani, B.K. Pradhan, T. Nakajima, A. Tomita, Adv. Mater., 15 (2003) 1087.
[32] Mun Ja Kim, Tae Young Lee, Jong Hyong Choi, Jong Bae Park, Jin Seung Lee, Seong Kyu Kim, Ji-Beom Yoo, Chong-Yun Park, Diamond and Relat.
Mater., 12 (2003) 870.
[33] Sui, Y.C., González-León, J.A., Bermúdez, A., Saniger, J.M., Carbon, 39 (2001) 1709.
[34]Li. Meng-Ke, Lu. Mei, Kong. Ling-Bin; Guo. Xin-Yong, Li. Hu-Lin, Mater.
Sci. and Engin. A, 354 (2003) 92.
[35] Wang Chengwei, Li Menke, Chinese Science Bulletin, 45 (2000) 15.
[36] Suh Jung Sang, Lee Jin Seung, Kim Hoseong, Synthetic Metals, 123 (2001) 381.
[37] Kim, Mun Ja, Choi, Jong Hyung, Park, Jong Bae, Kim, Seong Kyu, Yoo, Ji-Beom, Park, Chong-Yun., Thin Solid Films, 435 (2003) 312.
[38] W.B. Choi, B.-H. Cheong, J.J. Kim, J. Chu, E. Bae, Adv. Mater.,13 (2003) 80.
[39] X. Mei, M. Blumin, D. Kim, Z. Wu, H.E. Ruda, J. Cryst. Growth 251 (2003) 253.
[40] s.Iijima, Nature, 354 (1991) 56.
[41] M. S. Dresselhaus, G. Dresselhaus, R. Saito, Carbon, 33 (1995)883.
[42] J. C. Charlier, J. P. Issi, Appl. Phys. A., 67 (1998) 79.
[43] M. D. Haus, G. Dresselhaus, P. Eklund, R. Saito, Phys. World, 33 (1998).
[44] J. W. Mintmire, C. T. White, Appl. Phys. A, 67 (1998) 65.
[45] O. Groning, O. M. Kuttel, C. H. Emmenegger, P. Groning, L. Schlapbach,
[46] T. W. Ebbesen, P. M. Ajayan, H. Hiura, K. Tanigaki, Nature, 367 (1994) 519.
[47] T. W. Ebbesen, P. M. Ajayan, Nature, 358 (1992) 220.
[48] A. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, C. Xu, Y. H. Lee, S. G. Kim, A. G. Rinzler, D. T. Colbert, G. E. Scuseria, D. Tomanek, J. E.
Fischer, R. E. Smalley, Science, 273 (1996) 483 .
[49] M. Endo, K. Takeachi, S. Igarashi, K. Kobori, M. Shiraishi, H. W. Kroto, J.
Phys. Chem. Solids, 54 (1993) 1841.
[50] B. C. Statishkumar, A. Govindaraj, C. N. R. Rao, Chem. Phys. Lett., 307 (1999) 158.
[51] V. Ivanov, J. B. Nagy, Ph. Lambin, A. Lucas, X. B. Zhang, X. F. Zhang, D.
Bernaerts, G. Van Tendeloo, S. Amelinckx, J. Van Landuyt, Chem. Phys. Lett., 223 (1994) 329.
[52]Y. C. Choi, Y. M. Shin, S. C. Lim, D. J. Bae, Y. H. Lee, B. S. Lee, D.
Chung, J. Appl. Phys. 88 (2000) 4898.
[53] Y. Chen, L. P. Guo, D. J. Johnson, R. H. Prince, J. Cryst. Growth, 193,
Provencio, Science, 282 (1998) 1105.
[57] C. Bower, O. Zhou, W. Zhu, D. J. Werder, S. Jin, Appl. Phys. Lett., 77 (2000) 2767.
[58] Shoushan Fan , Michael G. Chapline, Nathan R. Franklin, Thomas W.
Tombler, Alan M. Cassell, Hongjie Dai, Science, 283 (1999) 512.
[59] H.J. Lai, M.C.C. Lin, M.H. Yang, A.K. Li, Materials Science and Engineering,16 (2001) 23.
[60]D. S. Bethune, C. H. Klang, M. S. de Vries, G. Gorman, R. Savoy, J.
Vazquez, R. Beyers, Nature, 363 (1993) 605.
[61] B. I. Yakobson, R. E. Smalley, American Scientist 85 (1997) 324.
[62] B. C. Statishkumar, A. Govindaraj, C. N. R. Rao, Chem. Phys. Lett., 307 (1999) (1995) 158.
[63] 陳柏林, Anodic aluminum oxide template assisted growth and electron field emission of carbon nanotubes and titanium oxide nanodots，博士論文，交通大學 2005.
[64] Baker R. T. K., Carbon, 27, (1989), 315.
[66]Lee, Cheol Jin, Jeunghee Park, Appl. Phys. Lett. 77 (2000) 3397.
[67] Fowler, R. H., L. W. Nordheim, Proc. Roy. Soc., Ser. A 119 (1928) 173.
[68] Iannazzo, S. Solid-State Electronics , 36 (1993) 301.
[69] W. Zhu, C. Bower, G. P. Kochanski, S. jin, Solid-State Electronics, 45, (2001) 921.
[70]Chung, Deuk-Seok, S. H. Park, H. W. Lee, J. H. Choi, S. N. Cha, J. W. Kim, J. E. Jang, K. W. Min, S. H. Cho, M. J. Yoon, J. S. Lee, C. K. Lee, J. H. Yoo, Jong-Min Kim, J. E. Jung, Y. W. Jin, Y. J. Park, J. B. You, Appl. Phys. Lett. 80 (2002) 4045.
[71] http://www.displaysearch.com
[72] http://www.digitimes.com.tw 盧慶儒製圖。
[73] J. Li, C. Papadopoulos, and J. M. Xu, M. Moskovits, Appl. Phys. Lett., 75, (1999), 367.
[74] I. Vrublevsky, V. Parkoun, V. Sokol, J. Schreckenbach, G. Marx, Appl.
Surf. Sci., 222 (2004) 215-225
[75]Qian, Weizhong, Fei Wei, Tang Liu, Zhanwen Wang, Yongdan Li, J. Chem.
Phys., 118 (2003) 878.
[76] Lee Yun-Hi,* Yoon-Taek Jang, Dong-Ho Kim, Jin-Ho Ahn, Byeong-kwon Ju, 13 (2001) 479-482.
[77] V. V. Kovalevski, A. N. Safronov, Carbon, 36 (1998) 963.
[78] Chao Hsun Lin, Hui Lin Chang, Chih Ming Hsu, An Ya Lo, Cheng Tzu Kuo, Diamond Relat. Mater., 12 (2003) 1851–1857.
[79] M. Chen, C. Chen, H. Koo, C. F. Chen, Diamond Relat. Mater. 12 (2003) 1829.
[80] K. Lee, K. Baik, J. Bang, S. Lee, W. Sigmund, Solid State Commun., 129 (2004) 583.
[81] Jeong, Soo-Hwan, Hee-Young Hwang, Kun-Hong Lee, Yongsoo Jeong, Appl. Phys. Lett. 78 (2001) 2052.
[82] Kuttel, O. M., O. Groening, C. Emmenegger, L. Schlapbach, Appl. Phys.
Lett. 73 (1998) 2113.
[83] J. H. Yen, I. C. Leu, M. T. Wu, C. C. Lin, M. H. Hon, Electrochemical and Solid-State Letters, 7 (8) (2004) H29-H31.
[84] Suh, Jung Sang, Kwang Seok Jeong, Jin Seung Lee, Intaek Han, Appl. Phys.
Lett. 80 (2002) 2392.
[85] Po-Lin Chen, Jun-Kai Chang, Cheng-Tzu Kuo, Fu-Ming Pan, Appl. Phys.
Lett. 86 (2005) 123111.
[86] A.G. Rinzler, J.H. Hafner, P. Nikolaev, L. Lou, S.G. Kim, D. Tomanek, P.
[87] W.A. de Heer, A. Chatelain, D. Ugarte, Science 270 (1995) 1179.
[88] W.B. Choi, D.S. Chung, J.H. Kang, H.Y. Kim, Y.W. Jin, I.T. Han, Y.H.
Lee, J.E. Jung, N.S. Lee, G.S. Park, J.M. Kim, Appl. Phys. Lett. 75 (1999) 3129.
[89] J. Hafner, C. Cheung, C. Lieber, Nature 398 (1999) 761– 762.
[90] J. Robertson, W.I. Milne, K.B.K. Teo, M. Chhowalla, XVI International Winterschool on Electronic Properties of Novel Materials,
Kirchberg, Austria, 2002 (2–9 March), pp. 537–542.
[91] Y.M. Wong, W.P. Kang, J.L. Davidson, A. Wisitsora-at, K.L. Soh, Sens. Actuators, B 93 (2003) 326–331.
[92]Y.M. Wonga, S. Weib, W.P. Kanga, J.L. Davidsona, W. Hofmeisterb, J.H.
Huangc, Y. Cuid, Diamond & Relat. Mater., 13 (2004) 2105.
[93] Hyung Soo Uh, Sang Sik Park, Thin Solid Film, 504 (2006) 50.