顯的產生嚴重的擴散，導致界面層的變厚，代表氮化鋯層可以抵擋擴散產 生。
從原子力顯微鏡(AFM)所拍下來的圖片及所掃描得之得粗糙度得知，退 火溫度越高時，表面粗糙度越不好，可能是因為氧化層產生結晶的關係，因 而導致表面粗糙度上升；而在有多一層氮化鋯層時的粗糙度明顯上升，應該 是薄膜品質不一致，導致越後面鍍的薄膜，會受到前面所鍍得薄膜粗糙度的 影響。
再從穿越式電子顯微鏡(TEM)所拍攝的切面圖，以及成份分析得之，氮 化鋯層是可以抑制擴散的產生，包括矽的擴散和鈦的擴散。但本試驗的氮化 鋯層厚度只有 1.5 nm，不足以完全阻擋擴散的產生，還是有些許擴散的現象。
且由於擴散現象，所沉積的薄膜結構，成份都混在一起，導致特性比較不穩 定。從所拍攝的切面圖也可看出，所沉積的薄膜部分，在高溫的情況下，已 經開始有些許的結晶產生。
5.2 未來展望
本次實驗主要是探討氧化釔摻雜鋯做為氧化層的效能，而這批試片是針 對有或無氮化鋯層、摻雜鋯的多寡及利用氧化層堆疊做探討。所以之後可以 試著利用氧化釔摻雜其它高介電係數的材料，例如利用氧化釔摻雜常跟鋯比 較的鉿。或著利用不同堆疊厚度的氧化層跟沒有堆疊的氧化釔摻雜鋯氧化層 做探討，或著也可以利用氧化鋯摻釔，縮小釔的比率或增加鋯的比例去探討。
也可以利用其他的金屬做為金屬閘極做測試，例如氮化鈦、鉭或氮化鉭。或 著改變氮化鋯的厚度，看其抑制擴散的程度上的不同。
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