τ
L, τ
H(S )
τ L
τ H
1.2 1.3 1.4 1.5 1.6
10
-210
-110
0Vg (V)
strong inversion
τ
L, τ
H(S )
τ L
τ H
Fig. 5-15 The electron occupation factor (f
t) and normalized noise power spectral density versus gate voltage in a small area n-MOSFET (W/L=0.16µm/0.12µm, tox=15Å). The second noise peak in strong inversion is due to valence-band electron
0.6 0.9 1.2 1.5 1.8
weak inversion strong inversion valence electron tunneling
induced noise
weak inversion strong inversion valence electron tunneling
induced noise
Fig. 5-16 Electron occupation factor (f
t) andnormalized noise power spectral density in a small
=33Å n-MOSFET (W/L= 0.24µm/0.18µm,).
0.5 1.0 1.5 2.0 2.5
small area n-MOSFET (W/L=0.24µm/0.18µm)
small area n-MOSFET (W/L=0.24µm/0.18µm)
small area n-MOSFET (W/L=0.24µm/0.18µm)
small area n-MOSFET (W/L=0.24µm/0.18µm)
Chapter 6 Conclusions
First of all, the hot carrier degradation mechanisms of drain current flicker noise in analog CMOS devices are investigated. The sources responsible for noise degradation are verified through both submicron CMOS transistors and a special ONO charge storage cell with various kinds of stresses. From our observation, the non-uniform oxide-trapped charges generated by maximum gate current stress could give rise to series flicker noise degradation as the number fluctuation mechanism dominates noise processes, which can be understood through a two-region unified flicker noise model. For n-MOSFETs, the number fluctuation mechanism dominates at low gate bias, so that the noise magnitude seriously increases after hot carrier stressing.
Next, pocket implantation effects on drain current flicker noise in 0.13µm CMOS process based high performance analog n-MOSFETs is investigated. Our results show that pocket implantation will degrade device noise characteristics primarily due to enhanced non-uniform threshold voltage distribution along the channel. Besides, the oxide quality is not affected by the pocket implantation process through the evidence of charge pumping results.
That is, the channel profile engineering would be a key factor for low noise device design instead of the improvement of oxide quality. In addition, an analytical flicker noise model to take into account a pocket doping effect is proposed and shows good agreement with the measurement results. The analytical model is easy to implement in circuit simulators, such as HSPICE, for analog circuit design. Based on this concept, the programming charge distribution in NROM cells can be extracted from noise measurement in the linear operation regime without any device simulations. In addition, the result shows good agreement with the inverse modeling method.
Then, the pocket implantation would influence the channel carrier distribution and
degrade drain current Flicker noise, which is proved by device simulation. In addition, substrate bias has large effect on low frequency noise. The noise level is increased at a reverse substrate bias. This effect is more significant in a pocket device since the reverse substrate bias will result in a more non-uniform threshold voltage distribution. In addition, the reduction of channel carrier number due to a reverse substrate bias also contributes to the increase of noise.
Finally, low frequency flicker noise in analog n-MOSFETs with 15Å gate oxide is investigated. A new noise generation mechanism resulting from valence band electron tunneling is proposed. In strong inversion condition, valence-band electron tunneling from Si substrate to poly-gate takes place and results in the splitting of electron and hole quasi Fermi-levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi Fermi-levels. Random telegraph signal due to capture of channel electrons and holes is characterized in a small area device to support our model.
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Chapter 3
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Chapter 5
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