In order to predict the response of EUV irradiation damage in each material, the fundamental material characteristics should be fully understood. The total energy absorption, energy band gap, intrinsic trap density, radiation induce defect traps, charge capture cross-section, and interface states distribution before and after EUV irradiation, all of these factors can help us to predict the response to EUV irradiation.
Radiation hardness is an important issue in the process. As the EUV is introduced into IC process, how to provide a good way to protect device from EUV damage is also an important issue. Capping a radiation hard film on the top, using different S/D structure, using different isolation structure may be helpful on radiation hardness. It has been reported that different gate thicknesses have different responses to the radiation. The test of EUV radiation on thinner gate dielectric thickness should be performed.
After irradiation, we have tested the effect of long time storage at room
steps. If the radiation damage can be delimited by 500 oC ~ 600 oC thermal treatment, we can use the temperatures in the latter process to eliminate the radiation damage.
The radiation damage issue can be much more relieved. The annealing effect at low temperature within 600 oC should be researched.
Even the radiation damage can be annealed by some annealing step. However the device reliability is also need to be noticed after EUV irradiation. NBTI and PBTI tests should also be taken.
In this thesis we have noticed that IL plays an important role in radiation damage.
The researches of EUV irradiation on different ILs are very important for high-k/metal gate device or another advance MOSFETs.
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