Characteristic measurement of devices

We use HP 4284A precision LCR meter parameter to analyze Capacitance-Voltage (C-V) characteristic diagrams at 1MHz and the characteristic curves of Current-Voltage (I-V) are measured with semiconductor parameter analyzer by HP 4156. We measure all measurements are at room temperature in an air atmosphere.

(a)

Multiple Plasma Jet System

• Scale-up of single jet for 3-D atmospheric coating

Handheld Plasma Applicator

(b)

Figure 2-1 (a) APP system of ITRI (b) the other APP systems

(a)

(b)

Figure 2-2 (a)The structure of APPT (b)The diagram of plasma surface treatment

(a) Vg = Vs = Vd = 0

(b) Vs = Vd = 0, Vg > 0

(c) Vs = Vd = 0, Vg < 0

(d) Vs =0, Vg < Vd < 0

(e) Vs =0, Vd < Vg < 0

(f) Vs = Vg = 0, Vd < 0

Figure 2-3 Schematic of operation of organic thin film transistor, showing

a lightly doped semiconductor; + indicates a positive charge in semiconductor; - indicates a negatively charge in semiconductor. (a) No-bias; (b) Depletion mode; (c) Accumulation mode; (d) Non-uniform charge density; (e) Pinch-off of channel; (f) Growth of the depletion zone

Figure 2-4 The MIM structure of different APPT flow rates

RCA clean N

⁺

substrate wafer

Thermal oxidation 34 min at 1000℃

Deposition of 300 nm aluminum as the bottom electrode

Deposition of SiO

2

by APPT with different flow rates (0.1, 1 and 5 sccm)

Deposition of 300 nm aluminum as the top electrode through shadow mask

Figure 2-5 The MIM structure of different metal gates

RCA clean N

⁺

substrate wafer

Thermal oxidation 34 min at 1000℃

Deposition of different metals (Al, Ni, Ir, TaN and Pd) as the bottom electrode

Deposition of SiO

2

by APPT with 0.1 sccm flow rate

Deposition of 300 nm aluminum as the top electrode through shadow mask

RCA clean N

⁺

substrate wafer

Thermal oxidation 34 min at 1000℃

Deposition of nickel as the bottom electrode

Deposition of SiO

2

by APPT with 0.1sccm flow rate 60 times

Surface treatment:

1. N

2

plasma 2. NH

3

plasma

Figure 2-6 The MIM structure of plasma treatment dielectric gate Deposition of 30 nm nickel as the top electrode through shadow mask

RCA clean N

⁺

substrate wafer

Thermal oxidation 34 min at 1000℃

Deposition of 30 nm nickel as the gate electrode

Deposition of SiO

2

by APPT with 0.1sccm flow rate 60 times

Surface treatment:

1. N

2

plasma 2. NH

3

plasma

Figure 2-7 The OTFT structure

Deposition of pentacene as the active layer

Deposition of 30 nm gold as the source and drain electrode

Chapter 3

Results and Discussion

3.1 Determination of threshold voltage and mobility

The linear regime field effect mobility can be obtained by the calculation described below. At low V

D

, I

D

increases linearly with V

D

(linear regime) and is approximately determined by the following equation: capacitance per unit area of the insulating layer, V

T

is the threshold voltage, and μ is the field effect mobility, which can be calculated in the linear regime from the transconductance,

G

^m

=

_n C _ox V _D

and equating the value of the slope of this plot to Gm, then find Gm,max which can gain the value of threshold voltage (V

_T

) and linear mobility.

For the known values included C

_ox

, V

T,

and W/L, the value of saturation mobility can be obtained from equation (3-3)

3.2 Result of different conditions

3.2.1 The influence of different flow rates

In our experiments, we try to test the different flow rates of APPT and discuss their influence. There are three different flow rates of APPT which 0.1, 1, and 5 sccm are used in our experiment. The other detail process will be not repeated in this section. Silicon oxide is deposited by APPT on the bottom electrode surface with different flow rates of APPT at substrate temperature at 150℃. The I-V and C-V characteristic is shown in Figure 3-1. The horizontal axis and vertical axis of Figure 3-1 (a) represent the swept voltage set and the value of capacitance respectively.

We can see the values of capacitor from Figure 3-1 (a) is influenced by the flow of APPT. We can know from the Figure 3-1 (a) the flow of carrier gases will influence the quantity that the TEOS gas comes out.

The flow of carrier gases increases and leads to the fact the coming out amount of TEOS gas to increase.

To summarize this section, we would choose 0.1 sccm as our optimal parameter. The leakage current density of 0.1 sccm is minimum and the breakdown voltage is maximum between the three deposition flow rates of APPT.

3.2.2 The influence of different metal gates

In our experiments, we try to test the different metal gates and discuss their influence. There are five different metal gates which Al, Ni, Ir, TaN and Pd are used in our experiment. The other detail process will be not repeated in this section. Silicon oxide is deposited by APPT on the bottom electrode surface with different metal gates at substrate

temperature at 100, 150 and 200℃. The I-V and C-V Characteristic is shown in Figure 3-2 ~ Figure 3-7. The horizontal axis and vertical axis of Figure 3-2(a) ~ Figure 3-7(a) represent the swept voltage set and the value of capacitance respectively. We can learn from the Figure 3-7 that different metal gate under the same conditions of APPT depositing have different results. The leakage current and capacitor are influenced by different metal gates.

Additional measured values such as surface roughness also are shown in Table 3-1. The roughness of Al, Ni, TaN, Ir and Pd gate electrode is about 8.724, 0.663, 1.132, 0.706 and 1.582 nm (the corresponding AFM analysis), the roughness of the silicon oxide deposited by APPT on the top of Al, Ni, TaN, Ir and Pd gate electrode with substrate temperature at 100, 150 and 200℃ is around 10.895, 9.937, 8.601; 11.695, 3.778, 1.950; 6.421, 3.882, 2.090; 18.422, 4.134, 3.013; 3.093, 2.075, 2.467 nm (see Figure 3-8 ~ Figure 3-12). Figure 3-13

shows the trend of surface roughness with increasing the substrate

temperature.

To summarize this section, we would choose Ni as our optimal parameter. The leakage current density of Ni metal gate is minimum.

Relatively other metal, the depositing of TEOS is easy at Ni, so the same TEOS amount can be deposited smooth. Ni relatively accords with the economic benefits.

3.2.3 The influence of plasma treatment

In our experiments, we try to test the plasma treatment and discuss their influence. There are two different plasma treatments which N , and

NH

₃

are used in our experiment. The other detail process will be not repeated in this section. Silicon oxide is deposited by APPT on the bottom electrode surface with 0.1 sccm of APPT at substrate temperature at 200℃.

We regular the treatment time at the first stage. The I-V and C-V characteristic is shown in Figure 3-14 ~ Figure 3-15. The horizontal axis and vertical axis of Figure 3-14 (a) ~ Figure 3-15 (a) represent the swept voltage set and the value of capacitance respectively. We can know from the Figure 3-14 (b) ~ Figure 3-15 (b) that the influence of plasma flow on leakage current is transparent.

And we change the treatment time at the second stage. The I-V and C-V characteristic Figure 3-16 ~ Figure 3-17. The horizontal axis and vertical axis of Figure 3-16 (a) ~ Figure 3-17 (a) represent the swept voltage set and the value of capacitance respectively. We can know from the Figure 3-16(b) ~ Figure 3-17 (b) and Figure 3-18 that the influence of treatment time on leakage current is conspicuousness.

We select the best parameter to measure their surface roughness, contact angle and the film thickness. This best parameter respectively is N

₂

plasmas treatment 0.5 minute with 50 sccm, NH

3

plasmas treatment 0.5 minute with 50 sccm.

Additional measured values such as surface roughness, contact angle and the film thickness also are shown in Table 3-2. The roughness of no, N

2

, NH

3

, plasma treatment is around 1.246, 1.190,1.089 nm (see Figure 3-19). The film thickness measured by SEM and the contact angle is shown in Figure 3-20. Causing the contact angel becomes small reason, it

is probably to the organic impurity on surface is removed by plasma treatment (see Figure 3-21) [36,37]. And Figure 3-22 shows the film thickness.

To summarize this section, we can know from the Figure 3-16 (a) ~ Figure 3-17 (a) and Table 3-2 to calculate the permittivity of no、N

2

、NH

3

treatment is 4.06、3.75、3.70. We may see that plasma treatment have the effect to reduce leakage current. So we can select the best plasma treatment parameter to fabricate OTFT device.

3.3 Analysis and discussion OTFT electric characteristics

Here we focus on the influence of plasma treatment under varied conditions which have different gas of PECVD. They are N

₂

, NH

₃

and no treatment respectively.

As shown from Figure 3-23 to Figure 3-25, design of drain current I

D

versus gate voltage V

D

at various drain voltage V

G

, drain current I

D

versus gate voltage V

_G

at various drain voltage V

_D

and drain current I

_D

versus radical gate voltage V

G

at various drain voltage V

D

with different plasma treatments.

In all figures of different treatment conditions, we can observe that no treatment has best electrical characteristic about I

_D

-V

_G

and NH

₃

treatment has best electrical characteristic about I

D

-V

D

. Additionally, we plot the comparison of I

_D

-V

_D

, I

_D

-V

_G

and ︱ I

_D

︱

^1/2

-V

_G

in the same figure due to observe clearly, they are shown in Figure 3-26. The

magnitude of current at the same operating voltage, NH

₃

> no > N

₂

. Besides, threshold voltage and mobility would be calculated by taking measured data into Eq.(3-1) ~ (3-3). Arrangement of threshold voltage, mobility and on/off ratio is shown in Table 3-3(labeled as no treatment, N

₂

and NH

₃

) and Figure 3-27. The mobility in the saturation region and the threshold voltage and on/off ratio of the OTFT are 0.72 cm

²

/Vs and -0.616 V and ~10

³

, respectively.

To summarize this section, we can know from the experiment the atmospheric-pressure plasma technology silicon dioxide is worth studying. The advantage of the atmospheric-pressure plasma technology is that it needn't vacuum and at general room temperature to deposit insulator. This advantage is an asset condition to fabricate OTFT.

-2 -1 0 1 2

Le a k a g e Cu rre nt (n A)

Bias ( V ) 0.1sccm

1.0sccm 5.0sccm

(b)

Figure 3-1 The (a)C-V and (b)I-V characteristic of MIM structure with different APPT flow rates

-2 -1 0 1 2

L ea k ag e Cur ren t (n A)

Bias (V)

(b)

Figure 3-2 The (a)C-V and (b)I-V characteristic of MIM structure with Al gate

-2 -1 0 1 2

Le akag e Cur rent (n A)

Bias (V)

(b)

Figure 3-3 The (a)C-V and (b)I-V characteristic of MIM structure with Ni gate

-2 -1 0 1 2

L eak age Cur ren t ( nA )

Bias (V)

(b)

Figure 3-4 The (a)C-V and (b)I-V characteristic of MIM structure with TaN gate

-2 -1 0 1 2

Le akag e Cur rent (n A)

Bias (V)

(b)

Figure 3-5 The (a)C-V and (b)I-V characteristic of MIM structure with Ir gate

-2 -1 0 1 2

Le akag e Cur rent (n A)

Bias (V)

(b)

Figure 3-6 The (a)C-V and (b)I-V characteristic of MIM structure with Pd gate

-2 -1 0 1 2

Leak age C u rrent Dens it y ( A/c m 2 )

Pd

TaN Ni Ir

Metal gate Al

In same electric field

(b)

Figure 3-7 The (a)C-V and (b)I-E characteristic of MIM structure with different metal gates at 200℃

Table 3-1: The surface roughness of different conditions 溫度

金屬 100℃ 150℃ 200℃

Al 10.895 nm 9.937 nm 8.601 nm

Ni 11.695 nm 3.778 nm 1.950 nm

TaN 6.421 nm 3.882 nm 2.090 nm

Ir 18.422 nm 4.134 nm 3.013 nm

Pd 3.093 nm 2.075 nm 2.467 nm

(a) (b)

(c)

Figure 3-8 The surface roughness of APPT SiO

2

on Al gate at (a)100, (b)150, (c)200 substrate temperature

(a)

(b)

(c)

Figure 3-9 The surface roughness of APPT SiO

2

on Ni gate at (a)100, (b)150, (c)200 substrate temperature

(a)

(b)

(c)

Figure 3-10 The surface roughness of APPT SiO

2

on TaN gate at (a)100, (b)150, (c)200 substrate temperature

(a)

(b)

(c)

Figure 3-11 The surface roughness of APPT SiO

2

on Ir gate at (a)100, (b)150, (c)200 substrate temperature

(a)

(b)

(c)

Figure 3-12 The surface roughness of APPT SiO

2

on Pd gate at (a)100, (b)150, (c)200 substrate temperature

90 100 110 120 130 140 150 160 170 180 190 200 210 2

4 6 8 10 12 14 16 18 20

0 2 4 6 8 10

0 2 4 6 8 10

RMS

temperature(

^o

C)

Al Ni TaN Ir Pd

Figure 3-13 The trend of surface roughness of different conditions

-2 -1 0 1 2

Leakage Current De nsity (A/ c m

2

)

Bias (V)

(b)

Figure 3-14 The (a)C-V and (b)I-V characteristic of MIM structure by N

2

plasma treatment with different flow rates

-2 -1 0 1 2

Leakage Current De nsity (A/ c m

2

)

Bias (V)

(b)

Figure 3-15 The (a)C-V and (b)I-V characteristic of MIM structure by NH

3

plasma treatment with different flow rates

-2 -1 0 1 2

Leakage Current De nsity (A/ c m

2

)

Bias (V)

(b)

Figure 3-16 The (a)C-V and (b)I-V characteristic of MIM structure by N

2

plasma treatment with different time

-2 -1 0 1 2

Leakage Current De nsity (A/ c m

2

)

Bias (V)

(b)

Figure 3-17 The (a)C-V and (b)I-V characteristic of MIM structure by NH

3

plasma treatment with different time

1 2 3

L e akage Cur rent Den s it y ( A/cm 2 )

Plasma treatment

NH 3

N 2

no

In the same electric field

Figure 3-18 The I-E characteristic of MIM structure with different plasma treatment

Table 3-2: The surface roughness, contact angle and the film thickness of different conditions

Plasma

(a)

(b)

(c)

Figure 3-19 The roughness of (a)no, (b)N

₂

, (c)NH

₃

plasma treatment

2 20

22 24 26

contact angle thickness

Plasma treatment Co nt a c t ang le (

o

)

NH

3

N

2

no

12.2 12.3 12.4 12.5 12.6

T h ickness (n m )

Figure 3-20 The film thickness and the contact angle of different plasma treatments

(a)

(b)

(c)

Figure 3-21 The contact angel of (a)no, (b)N

₂

, (c)NH

₃

plasma treatment

(a)

(b)

(c)

Figure 3-22 The film thickness of (a)no, (b)N

₂

, (c)NH

₃

plasma treatment

Table 3-3 The s threshold voltage, mobility and on/off ratio of different conditions

Plasma treatment

threshold

voltage(Volt) Mobility(cm

²

/V·s) on/off ratio no -0.616 V 0.56 cm

²

/V·s 0.81×10

³

N

2

-0.953 V 0.59 cm

²

/V·s 0.47×10

³

NH

₃

-0.886 V 0.72 cm

²

/V·s 0.41×10

³

0.0 -0.5 -1.0 -1.5 -2.0

Figure 3-23 I

_D

-V

_D

for different plasmas treatments (a) no treatment (b) N treatment (c) NH treatment

-2.6 -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2

Figure 3-24 I

_D

-V

_G

for different plasmas treatments (a) no treatment (b) N treatment (c) NH treatment

-2.6 -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0

| Drain Current |1/2(A)

(a)

| Drain Current |1/2(A)

(b)

| Drain Current |1/2(A)

(c)

Figure 3-25 ︱ I

_D

︱

^1/2

-V

_G

for different plasmas treatments (a) no treatment (b) N

2

treatment (c) NH

3

treatment

0.0 -0.5 -1.0 -1.5 -2.0

| Drain Current |1/2(A)

(c)

Figure 3-26 The comparison of (a) I

_D

-V

_D

(b) I

_D

-V

_G

(c) ︱ I

_D

︱

^1/2

-V

_G

with different treatments

2

Figure 3-27 The s threshold voltage, mobility and on/off ratio of different conditions

Chapter 4

Conclusions and Future work

4.1 Conclusions

We can know from the experiment the flow of carrier gases will influence the quantity that the TEOS gas comes out. The increasing of the flow rate about carrier gases leads to the increasing of released TEOS gas.

But depositing is too quickly to make good quality of insulator.

And we can learn from the experiment the nickel is most suitable for using APPT to deposit the oxidize layer.

After plasma treatment, the insulator surface characteristic is caused to have exiguity changes. For example, there are the change of the surface roughness and contact angle. And the plasma treatment has the effect to reduce leakage current.

In summary, OTFT using pentacene as an active layer are fabricated on insulator deposited by APPT. The mobility in the saturation region and the threshold voltage and on/off ratio of the OTFT are 0.72 cm

²

/Vs and -0.616 V and ~10

³

, respectively. The advantage of the atmospheric-pressure plasma technology is that it needn't vacuum and at general room temperature to deposit insulator. This advantage is an asset condition to fabricate OTFT.

4.2 Future work

The new method, for example, use plastics substrate as the base, so

that it’s more suitable for OTFT which is flexibility and lightness.

Spinning organic polymeric gate dielectrics on oxide which is deposited by APPT achieve the result of reducing roughness.

Simultaneously, we can improve the hydrophilic and hydrophobic question for organic semiconductor by organic polymeric gate dielectrics.

Because pentacene OTFT is sensitive to ambient conditions.

Protection from the environment by encapsulation is critical to the stability of pentacene OTFT. Therefore, using a suitable material as passivation to protect pentacene film from environmental effect is another important topic.

References

﹝1﹞ C. Reese, M. Roberts, M. M. Ling, and Z. Bao, Mater. Today 7, 20 (2004).

﹝2﹞ C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 14, 99 (2002).

﹝3﹞ A. Afzali, C. D. Dimitrakopoulos, and T. L. Breen, J. Am. Chem. Soc. 124, 8812 (2002).

﹝4﹞ C. J. Drury, C. M. Mutsaers, C. M. Hart, M. Matters and D. M. de Leeuw:

Appl. Phys. Lett. 73 (1998) 108.

﹝5﹞ M. G. Kane, J. Campi, M. S. Hammond, F. P. Cuomo, B. Greening, C. D.

Sheraw, J. A. Nichols, D. J. Gundlach, J. R. Huang, C. C. Kuo, L. Jia, L. H.

Klauk and T. N. Jackson: IEEE Electron Device Lett. 21 (2001) 534.

﹝6﹞ W. Fix, A. Ullmann, J. Ficker and Clemens: Appl. Phys. Lett. 81 (2002) 1735.

﹝7﹞ C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, T. N. Jackson, M. G.

Kane, I. G. Hill, M. S. Hammond, J. Campi, B. K. Greening, J. Francl and J.

West: Appl. Phys. Lett. 80 (2002) 1088.

﹝8﹞ Y. Fujisaki, Y. Inoue, H. Sato, T. Kurita, S. Tokito and H. Fujikake: Proc. Int.

Display Workshop (2003) (IDW’03), p. 291.

﹝9﹞ Y. Inoue, Y. Fujisaki, T. Suzuki, S. Tokito, T. Kurita, M. Mizukami, N.

Hirohata, T. Tada and S. Yagyu: Proc. Int. Display Workshop (2004) (IDW’04), p. 355.

﹝10﹞ H. E. Katz, Z. Bao and S. L. Gilat: Acc. Chem. Res. 34 (2001) 359.

﹝11﹞ Y. Y. Lin, D. J. Gundlach, S. F. Nelson and T. N. Jackson: IEEE Electron Device Lett. 18 (1997) 606.

﹝12﹞ F. J. Mayer zu Heringdorf, M. C. Reuter and R. M. Tromp: Nature 412 (2001)

517.

﹝13﹞ D. J. Gundlach, H. Klauk, C. D. Cheraw, C. C. Kuo, J. R. Huang and T. N.

Jackson: Electron Devices Meet., 1999, IEDM Tech. Dig.,Washington, D.C., (1999), p. 111.

﹝14﹞ M. Pope, C. E. Swenberg, “Electronic processes in organic crystal and polymers,”2

^nd

ed, New York: Oxford University Press, pp.337-340, 1999.

﹝15﹞ L. Torsi, A. Dodabalapur, L.J. Rothberg, A.W.P. Fung, H.E. Kazt

﹝16﹞ Chrisos D. Dimitrakopoulos, D, J. Mascaro, “Organic thin film transistors: A review of recent advances “IBM J. RES. & DEV. 45(1), 11, (2001).

﹝ 17 ﹞ Hagen Llauk, Gunter Schmid, Wolfgang Radlik, Werner Weber, LisongZhou,Chris D. Sheraw, Jonathan A.Nichols, Thomas N.jackson;

“ Contact resistance in organic thin film transistors”; Solid-State Electronics 47 (2003) 297-301

﹝18 ﹞ Graciela B. Blanchet, C. R. Fincher, And Micheal Lefenfeld”Contact resistance in organic thin film transistors” Appl. Phys. Lett, Vol 84, no. 2, 2004

﹝19 ﹞ Giles Lloyd, Munira Raja, Ian Sellers, Naser Sedghi, Raffaella Di Lucrezia,Simon Higgins, Bill Eccleston; “The properties of MOS structures using conjugated polymers as the semiconductor” ; Microelectronic Engineering 59 (2001) 323-328

﹝20﹞ P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, J. Appl.

Phys. 88, 6594~2000; D. J. Gundlach, L. Jia, and T. N. Jackson, IEEE Electron Device Lett. 22, 571~2001; P. V. Necliudov, M. S. Shur, D. J.

Gundlach, and T. N. Jackson, Solid-State Electron. 47, 259~2003; H. Kluak, G. Schmid, W. Radik, W. Weber, L. Zhou, C. Sheraw, J. A. Nichols, and T.

N. Jackson, ibid. 47, 297~2003.

﹝21﹞ I. Kymissis, C. D. Dimitrakopoulos, and S. Purushothaman, IEEE Trans.

Electron Devices 48, 1060~2001; C. D. Dimitrakopoulos and P. R. L.

Malenfant, Adv. Mater. ~Weinheim, Ger. 14, 99~2002

﹝22﹞ U. Geiser. Toward crystal design in organic conductors and superconductors.

In Proceedings of the 28th International School of Crystallography, Erice, Italy, May 1999.

﹝23﹞ G. Horowitz, R. Hajlaoui, and P. delannoy,“Temperature dependence of the field effect mobility of sexithiophene. Determination of the density of trap”,

J. Phys. III, France, vol. 5, no. 4 pp. 355-371, 1995

﹝24﹞ Lu, E. Delamarche, L. Eng, R. Bennewitz, E. Meyer, and H. J. Guntherodt,

“Kelvin probe force microscopy on surface: Investigation of the surface potential of self-assembled monolayers on gold,”Langmuir., vol. 15, pp.

8184-8188, 1999.

﹝ 25 ﹞ Kazumasa Nomoto, Nobukazu Hirai, Nobuhide Yoneya, Noriyuki Kawashima, Makoto Noda, Masaru Wada, Jiro Kasahara, IEEE Trans.

Electron Dev. 52 (2005) 1519

﹝26﹞ Qing Cao, Zheng-Tao Zhu, Maxime G. Lemaitre, Ming-Gang Xia, Appl.

Phys. Lett. 88 (2006) 113511.

﹝27﹞ Guangming Wang, Daniel Moses, Alan J. Heeger, Hong-Mei Zhang, Mux Narasimhan, R.E. Demaray, J. Appl. Phys. 95 (2004) 316.

﹝28﹞ Hsiao-Wen Zan, Kuo-Hsi Yen, Pu-Kuan Liu, Kuo-Hsin Ku, Chien-Hsun Chen, Jennchang Hwang Organic Electronics 8 (2007) 450–454.

﹝29﹞ Jin Y, Rang Z, Nathan M I, Newman C R and Frisbie C D 2004 Appl. Phys.

Lett. 85 4406.

﹝30﹞ Deman A L and Tardy J 2005 Org. Electron. 6 78.

﹝31﹞ Fritz S E, Kelley T W and Frisbie C D 2005 J. Phys. Chem. B 108 10574.

﹝32﹞ R. H. Tredgold, ”Order in Thin Organic Films” Cambridge University Press, 1994

﹝32﹞ A. Ulman, “An Introduction to Ultrathin Organic Films: From

Langmuir-Blodgett to Self-Assembly”, Academic press, New York,1991

﹝34﹞ R.F. Gould (Ed.), “Contact Angle, Wettability and Adhesion”, Proceeding of the 144th Meeting of the American Chemical Society, Vol.43, Washington,

DC, 1964

﹝35﹞ R.J. Good, “Contact angle wetting and adhesion: a critical review”, in:K.L.

Mimal (Ed.), Contact angle, Wettability and Adhesion, USP, The Netherlands, 1993, pp. 3–36.

﹝36﹞ Sang Chul Lim, Seong Hyun Kim, Jung Hun Lee, Mi Kyung Kim, Do Jin Kim, Taehyoung Zyung, Synthetic Metals 148 (2005) 75–79

﹝37﹞ D. Lu, Y. Wu, J. Guo, G. Lu, Y. Wang, J. Shen, Mater. Sci. Eng. B97 (2003) 141–144.

簡 歷

姓 名 : 徐明頤 性 別 : 男

出生日期 : 民國 73 年 04 月 26 日 出 生 地 : 台灣省新竹縣

住 址 : 新竹縣竹東鎮水之路 9 號 學 歷 : 私立上智天主教小學

(民國 79 年 09 月～民國 85 年 06 月) 竹東國中

(民國 85 年 09 月～民國 88 年 06 月) 國立新竹高級中學

(民國 88 年 09 月～民國 91 年 06 月) 國立中興大學物理學系

(民國 91 年 09 月～民國 95 年 06 月) 國立交通大學電子工程研究所碩士班 (民國 95 年 09 月～民國 97 年 07 月)

碩士論文 : 常壓式電漿系統沈積之二氧化矽在有機薄膜電晶體應上之研究 The study on the silicon dioxide deposited by

Atmospheric-Pressure Plasma Technology for Organic Thin-Film Transistor application

在文檔中 常壓式電漿系統沈積之二氧化矽在有機薄膜電晶體應用上之研究 (頁 33-0)