O 3 thickness

5.5 nm

NCs Materials CoSi2 NiXSi1-X Ge Ni None Ni

Density (cm^-2) None 2.67×10¹² 10⁹~10¹² 5.3×10¹¹ None 5×10¹¹ Diameter Size

(nm) None 4-6 9-11 5~13 None 5~13

¢ m (eV) None ~ 5.15 ~4.13 ~5.15 None ~ 5.15 NCs Formation

method

TA 700℃

10 min

RTO 500℃

30 s

LPCVD 370℃

RTA 550℃

1 min

None

RTA 550℃

1 min Tunneling

oxide thickness (nm)

3 8 6 7.5 2 8 Blocking oxide

thickness (nm) ~ 30 ~ 20 ~ 20 ~ 15 ~ 15 ~ 10

Sweep voltage

range (V) 7 5 15 18 20 10

ΔVTH shift (V) ~ 1.5 ~ 1.77 ~ 7.8 ~ 3.2 ~ 20 ~ 4.2 Retention time

(%) None Loss 20 Loss 15 Loss 5 Loss 20 Loss 30

62

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