Chapter 1 Introduction ….…
1.6 Organization of the Thesis
1.6 Organization of the Thesis
This thesis is organized as follow:
In Chapter 1, the overview of poly-Si TFTs, the method of device parameter extraction, the reason for high-κ extraction and motivations of this thesis are described.
In Chapter 2, we discuss the advantage of Pr2O3 high-κ material and TiN metal gate. Furthermore, Pr2O3 high-κ gate dielectric perform significant improvements in the device performance, such as lower threshold voltage, improved subthreshold swing, enhanced field effect mobility, and higher ON/OFF current ratio can be achieved as compared to the TEOS TFT even without other hydrogenation treatment.
In Chapter 3, the fabrication process of poly-Si TFTs combined with Pr2O3
gate dielectric, TiN gate and fluorine ion implantation will be proposed. Then, we research into the improvement degree of electrical characteristic and reliability.
In Chapter 4, the electrical characteristics and fabrication process of the
solid-phase-crystallized (SPC) poly-Si TFTs with CF4 plasma treatment combined with Pr2O3 gate dielectric and TiN gate will be proposed. Also we explore its performance and reliability.
In Chapter 5, we will make conclusions and future works.
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